SGH40N60UFD

IGBT
SGH40N60UFD
Ultra-Fast IGBT

General Description Features

Fairchild's UFD series of Insulated Gate Bipolar Transistors
• High speed switching
(IGBTs) provides low conduction and switching losses.
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is • High input impedance
a required feature. • CO-PAK, IGBT with FRD : trr = 42ns (typ.)

Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.

TO-3P E
G C E

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Description SGH40N60UFD Units

VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C 40 A
IC
Collector Current @ TC = 100°C 20 A
ICM (1) Pulsed Collector Current 160 A
IF Diode Continuous Forward Current @ TC = 100°C 15 A
IFM Diode Maximum Forward Current 160 A
PD Maximum Power Dissipation @ TC = 25°C 160 W
Maximum Power Dissipation @ TC = 100°C 64 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
TL 300 °C
Purposes, 1/8” from Case for 5 Seconds

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.77 °C/W
RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 1.7 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W

©2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1

 SGH40N60UFD
Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/ Temperature Coefficient of Breakdown
VGE = 0V, IC = 1mA -- 0.6 -- V/°C
∆TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 20mA, VCE = VGE 3.5 4.5 6.5 V
Collector to Emitter IC = 20A, VGE = 15V -- 2.1 2.6 V
VCE(sat)
Saturation Voltage IC = 40A, VGE = 15V -- 2.6 -- V

Dynamic Characteristics
Cies Input Capacitance -- 1430 -- pF
VCE = 30V, VGE = 0V,
Coes Output Capacitance -- 170 -- pF
f = 1MHz
Cres Reverse Transfer Capacitance -- 50 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 15 -- ns
tr Rise Time -- 30 -- ns
td(off) Turn-Off Delay Time VCC = 300 V, IC = 20A, -- 65 130 ns
tf Fall Time RG = 10Ω, VGE = 15V, -- 50 150 ns
Eon Turn-On Switching Loss Inductive Load, TC = 25°C -- 160 -- uJ
Eoff Turn-Off Switching Loss -- 200 -- uJ
Ets Total Switching Loss -- 360 600 uJ
td(on) Turn-On Delay Time -- 30 -- ns
tr Rise Time -- 37 -- ns
td(off) Turn-Off Delay Time VCC = 300 V, IC = 20A, -- 110 200 ns
tf Fall Time RG = 10Ω, VGE = 15V, -- 144 250 ns
Eon Turn-On Switching Loss Inductive Load, TC = 125°C -- 310 -- uJ
Eoff Turn-Off Switching Loss -- 430 -- uJ
Ets Total Switching Loss -- 740 1200 uJ
Qg Total Gate Charge -- 97 150 nC
VCE = 300 V, IC = 20A,
Qge Gate-Emitter Charge -- 20 30 nC
VGE = 15V
Qgc Gate-Collector Charge -- 25 40 nC
Le Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH

Electrical Characteristics of DIODE T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

TC = 25°C -- 1.4 1.7
VFM Diode Forward Voltage IF = 15A V
TC = 100°C -- 1.3 --
TC = 25°C -- 42 60
trr Diode Reverse Recovery Time ns
TC = 100°C -- 74 --
Diode Peak Reverse Recovery IF = 15A, TC = 25°C -- 4.5 6.0
Irr A
Current di/dt = 200A/us TC = 100°C -- 6.5 --
TC = 25°C -- 80 180
Qrr Diode Reverse Recovery Charge nC
TC = 100°C -- 220 --

©2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1

 SGH40N60UFD
160 80
Common Emitter 15V Common Emitter
20V
T C = 25℃ VGE = 15V
70
TC = 25℃

Collector Current, I C [A]

TC = 125℃
120 60
Collector Current, I C [A]

12V
50

80 40
V GE = 10V

30

40 20

10

0 0
0 2 4 6 8 0.5 1 10

Collector - Emitter Voltage, V CE [V] Collector - Emitter Voltage, V CE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage

Characteristics

4 30
Common Emitter V CC = 300V
V GE = 15V Load Current : peak of square wave
Collector - Emitter Voltage, VCE [V]

25

3 40A
Load Current [A]

20

2 20A 15

IC = 10A 10

1
5 Duty cycle : 50%
TC = 100℃
Power Dissipation = 32W
0 0
0 30 60 90 120 150 0.1 1 10 100 1000

Case Temperature, TC [℃] Frequency [KHz]

Fig 3. Saturation Voltage vs. Case Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level

20 20
Common Emitter Common Emitter
T C = 25℃ T C = 125℃
Collector - Emitter Voltage, VCE [V]

Collector - Emitter Voltage, VCE [V]

16 16

12 12

8 8

40A 40A
4 4
20A 20A
IC = 10A IC = 10A
0 0
0 4 8 12 16 20 0 4 8 12 16 20

Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, V GE [V]

Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE

©2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1

 SGH40N60UFD
2500 300
Common Emitter Common Emitter
V GE = 0V, f = 1MHz VCC = 300V, VGE = ± 15V
T C = 25℃ IC = 20A
2000 Ton
TC = 25℃
TC = 125℃
Capacitance [pF]

Cies 100 Tr

Switching Time [ns]

1500

1000

Coes

500
Cres

0 10
1 10 30 1 10 100 200

Collector - Emitter Voltage, V CE [V] Gate Resistance, RG [Ω ]

Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs.

Gate Resistance

1000 2000
Common Emitter Common Emitter
VCC = 300V, VGE = ± 15V V CC = 300V, V GE = ± 15V
IC = 20A IC = 20A
Toff 1000
TC = 25℃ T C = 25℃
TC = 125℃ T C = 125℃ Eon
Switching Time [ns]

Switching Loss [uJ]

Eoff
Tf Eon
Eoff

100 Tf

100

20 50
1 10 100 200 1 10 100 200

Gate Resistance, R G [Ω ] Gate Resistance, R G [Ω ]

Fig 9. Turn-Off Characteristics vs. Fig 10. Switching Loss vs. Gate Resistance
Gate Resistance

200 1000
Common Emitter
VCC = 300V, V GE = ± 15V
RG = 10 Ω
TC = 25℃
100
TC = 125℃
Switching Time [ns]

Switching Time [nS]

Toff

Tf
Toff
Ton 100

Common Emitter
V CC = 300V, V GE = ± 15V Tf
Tr
RG = 10Ω
T C = 25℃
T C = 125℃
10 20
10 15 20 25 30 35 40 10 15 20 25 30 35 40

Collector Current, IC [A] Collector Current, IC [A]

Fig 11. Turn-On Characteristics vs. Fig 12. Turn-Off Characteristics vs.
Collector Current Collector Current
©2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1
 SGH40N60UFD
3000 15
Common Emitter
RL = 15 Ω
TC = 25℃
1000

Gate - Emitter Voltage, VGE [ V ]

12
Switching Loss [uJ]

Eoff 300 V
Eon
100 6
Eoff
V CC = 100 V 200 V
Eon
Common Emitter
V CC = 300V, VGE = ± 15V 3
RG = 10Ω
T C = 25℃
T C = 125℃
10 0
10 15 20 25 30 35 40 0 30 60 90 120

Collector Current, IC [A] Gate Charge, Qg [ nC ]

Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics

500 500

IC MAX. (Pulsed)

100 100
50us
Collector Current, I C [A]

Collector Current, IC [A]

IC MAX. (Continuous) 100us

1㎳
10 10

DC Operation

1 Single Nonrepetitive 1
Pulse TC = 25℃
Curves must be derated
Safe Operating Area
linearly with increase
o
in temperature VGE =20V, T C=100 C
0.1 0.1
0.3 1 10 100 1000 1 10 100 1000

Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics

0.5
Thermal Response, Zthjc [℃/W]

0.2

0.1 0.1

0.05

0.02

0.01
0.01 Pdm

single pulse t1

t2

Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-3
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

Rectangular Pulse Duration [sec]

Fig 17. Transient Thermal Impedance of IGBT

©2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1

 SGH40N60UFD
100
T C = 25℃
VR = 200V
T C = 100℃
IF = 15A
100
T C = 25℃

Reverse Recovery Current, Irr [A]

T C = 100℃
Forward Current, I F [A]

10
10

1 1
0 1 2 3 100 1000

Forward Voltage Drop, VF [V] di/dt [A/us]

Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current

800 120
V R = 200V VR = 200V
IF = 15A
Stored Recovery Charge, Qrr [nC]

IF = 15A
T C = 25℃ TC = 25℃
100
Reverce Recovery Time, t rr [ns]

T C = 100℃ TC = 100℃
600

80

400

60

200
40

0 20
100 1000 100 1000

di/dt [A/us] di/dt [A/us]

Fig 20. Stored Charge Fig 21. Reverse Recovery Time

©2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1

 SGH40N60UFD
Package Dimension

TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20

3.80 ±0.20
ø3.20 ±0.10 +0.15
9.60 ±0.20 1.50 –0.05

18.70 ±0.20
12.76 ±0.20

19.90 ±0.20

23.40 ±0.20
13.90 ±0.20

2.00 ±0.20
3.50 ±0.20

3.00 ±0.20
16.50 ±0.30

1.00 ±0.20 1.40 ±0.20

+0.15
0.60 –0.05
5.45TYP 5.45TYP
[5.45 ±0.30] [5.45 ±0.30]

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® MICROWIRE™ SLIENT SWITCHER® UHC™
Bottomless™ FASTr™ OPTOLOGIC™ SMART START™ UltraFET®
CoolFET™ FRFET™ OPTOPLANAR™ SPM™ VCX™
CROSSVOLT™ GlobalOptoisolator™ PACMAN™ STAR*POWER™
DenseTrench™ GTO™ POP™ Stealth™
DOME™ HiSeC™ Power247™ SuperSOT™-3
EcoSPARK™ I2C™ PowerTrench® SuperSOT™-6
E2CMOS™ ISOPLANAR™ QFET™ SuperSOT™-8
EnSigna™ LittleFET™ QS™ SyncFET™
FACT™ MicroFET™ QT Optoelectronics™ TinyLogic™
FACT Quiet Series™ MicroPak™ Quiet Series™ TruTranslation™
STAR*POWER is used under license

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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CORPORATION.
As used herein:
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or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. H5