IRGP4750DPbF
IRGP4750D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 650V
  C  
IC = 50A, TC =100°C

tSC 5.5µs, TJ(max) = 175°C E

G E C
C G
VCE(ON) typ. = 1.7V @ IC = 35A G
E
IRGP4750DPbF  IRGP4750D‐EPbF 
Applications n-channel TO‐247AC  TO‐247AD 
 Industrial Motor Drive
 UPS G C E
 Solar Inverters Gate Collector Emitter
 Welding
Features Benefits
Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications
5.5µs Short Circuit SOA
Rugged Transient Performance
Square RBSOA
Maximum Junction Temperature 175°C Increased Reliability
Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation
Lead-Free, RoHs compliant Environmentally friendly

Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRGP4750DPbF TO-247AC Tube 25 IRGP4750DPbF
IRGP4750D-EPbF TO-247AD Tube 25 IRGP4750D-EPbF
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 650 V
IC @ TC = 25°C Continuous Collector Current 70
IC @ TC = 100°C Continuous Collector Current 50
ICM Pulse Collector Current, VGE = 15V 105
ILM Clamped Inductive Load Current, VGE = 20V  140 A
IF @ TC = 25°C Diode Continuous Forward Current 80
IF @ TC = 100°C Diode Continuous Forward Current 50
IFM Diode Maximum Forward Current  140
VGE Continuous Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 273
W
PD @ TC = 100°C Maximum Power Dissipation 136
TJ Operating Junction and -40 to +175
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) C
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT)  ––– ––– 0.55
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode)  ––– ––– 0.95
°C/W
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40

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IRGP4750DPbF/IRGP4750D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 650 — — V VGE = 0V, IC = 100µA 
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.72 — V/°C VGE = 0V, IC = 2.0mA (25°C-175°C)
— 1.7 2.0 IC = 35A, VGE = 15V, TJ = 25°C
VCE(on) Collector-to-Emitter Saturation Voltage V
— 2.1 — IC = 35A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 5.5 — 7.4 V VCE = VGE, IC = 1.4mA
VGE(th)/TJ Threshold Voltage Temperature Coeff. — -18 — mV/°C VCE = VGE, IC = 1.4mA (25°C-175°C)
gfe Forward Transconductance — 23 — S VCE = 50V, IC = 35A, PW = 20µs
— 1.0 35 µA VGE = 0V, VCE = 650V
ICES Collector-to-Emitter Leakage Current
— 1.0 — mA VGE = 0V, VCE = 650V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
— 1.6 2.1 IF = 35A
VF   Diode Forward Voltage Drop   V
— 1.3 — IF = 35A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Qg Total Gate Charge (turn-on) — 70 105 IC = 35A
Qge Gate-to-Emitter Charge (turn-on) — 20 30 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 30 45 VCC = 400V
Eon Turn-On Switching Loss — 1.3 2.2
Eoff Turn-Off Switching Loss — 0.5 0.8 mJ   IC = 35A, VCC = 400V, VGE=15V
Etotal Total Switching Loss — 1.8 3.0 RG = 10, TJ = 25°C
td(on) Turn-On delay time — 50 70
tr Rise time — 30 50 Energy losses include tail & diode
ns  reverse recovery 
td(off) Turn-Off delay time — 105 120
tf Fall time — 20 40
Eon Turn-On Switching Loss — 2.4 —
Eoff Turn-Off Switching Loss — 0.9 — mJ  IC = 35A, VCC = 400V, VGE=15V
Etotal Total Switching Loss — 3.3 —
RG = 10, TJ = 175°C
td(on) Turn-On delay time — 45 —
tr Rise time — 30 — Energy losses include tail & diode
ns reverse recovery  
td(off) Turn-Off delay time — 120 —
tf Fall time — 70 —
Cies Input Capacitance — 2200 — VGE = 0V
Coes Output Capacitance — 190 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 60 — f = 1.0MHz
TJ = 175°C, IC = 140A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 520V, Vp ≤ 650V
VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 650V
SCSOA   Short Circuit Safe Operating Area   5.5  —  —  µs   V = +15V to 0V
GE

Erec Reverse Recovery Energy of the Diode — 380 — µJ TJ = 175°C

trr Diode Reverse Recovery Time — 150 — ns VCC = 400V, IF = 35A
Irr Peak Reverse Recovery Current — 27 — A VGE = 15V, Rg = 10

Notes:
 VCC = 80% (VCES), VGE = 20V.
 R is measured at TJ of approximately 90°C.
 Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
 Maximum limits are based on statistical sample size characterization.
 Pulse width limited by max. junction temperature.
 Values influenced by parasitic L and C in measurement.

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IRGP4750DPbF/IRGP4750D-EPbF
80
For both:
Duty cycle : 50%
70 Tj = 175°C
Tcase = 100°C
Gate drive as specified
60
Power Dissipation = 136W
Load Current ( A )

50
Square Wave:
VCC
40

I
30

20 Diode as specified

10
0.1 1 10 100
f , Frequency ( kHz )

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)
80 300

250
60
200
Ptot (W)
IC (A)

40 150

100
20
50

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC (°C) TC (°C)

Fig. 2 - Maximum DC Collector Current vs. Fig. 3 - Power Dissipation vs.

Case Temperature Case Temperature
1000 1000

100
10µsec 100

100µsec
IC (A)
IC (A)

10
1msec
DC 10

1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1 1
1 10 100 1000 10 100 1000

VCE (V) VCE (V)

Fig. 4 - Forward SOA Fig. 5 - Reverse Bias SOA

TC = 25°C; TJ ≤ 175°C; VGE = 15V TJ = 175°C; VGE = 20V

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IRGP4750DPbF/IRGP4750D-EPbF
140 140
VGE = 18V VGE = 18V
120 VGE = 15V 120 VGE = 15V
VGE = 12V VGE = 12V
100 VGE = 10V 100 VGE = 10V
VGE = 8.0V VGE = 8.0V
80 80
ICE (A)

ICE (A)
60 60

40 40

20 20

0 0
0 2 4 6 8 10 0 2 4 6 8 10
V CE (V) V CE (V)

Fig. 6 - Typ. IGBT Output Characteristics Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs TJ = 25°C; tp = 20µs
140
140
VGE = 18V
120 VGE = 15V
120
VGE = 12V
100 VGE = 10V
VGE = 8.0V 100

80
ICE (A)

80
IF (A)

60
60
-40°C
40 25°C
40 175°C
20
20

0
0
0 2 4 6 8 10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V CE (V)
V F (V)
Fig. 8 - Typ. IGBT Output Characteristics Fig. 9 - Typ. Diode Forward Voltage Drop
TJ = 175°C; tp = 20µs Characteristics
10 10

8 8
ICE = 18A
ICE = 35A ICE = 18A

ICE = 70A ICE = 35A

6 6
VCE (V)
VCE (V)

ICE = 70A

4 4

2 2

0 0
5 10 15 20 5 10 15 20
V GE (V) V GE (V)

Fig. 10 - Typical VCE vs. VGE Fig. 11 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C

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IRGP4750DPbF/IRGP4750D-EPbF
10 140

120 TJ = 25°C
8
TJ = 175°C
ICE = 18A
100
ICE = 35A
6 ICE = 70A
VCE (V)

80

ICE (A)
4 60

40
2
20

0 0
5 10 15 20 4 6 8 10 12 14 16
V GE (V) V GE (V)

Fig. 12 - Typical VCE vs. VGE Fig. 13 - Typ. Transfer Characteristics

TJ = 175°C VCE = 50V; tp = 20µs
8 1000

6 tF
Swiching Time (ns)
100 tdOFF
5
Energy (mJ)

EON
tdON
4
tR
3
10
2 EOFF

0 1
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
IC (A) IC (A)

Fig. 14 - Typ. Energy Loss vs. IC Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; ; VCE = 400V, RG = 10; VGE = 15V TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V
6 1000

5
tdOFF
Swiching Time (ns)

4 EON
tdON
Energy (mJ)

3 100
tF

2
tR
EOFF
1

0 10
0 20 40 60 80 100 0 20 40 60 80 100
Rg () RG ()

Fig. 16 - Typ. Energy Loss vs. RG Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V

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IRGP4750DPbF/IRGP4750D-EPbF
45 40

35 RG = 5 30

RG = 10

IRR (A)
IRR (A)

25 20

RG = 100

15 RG = 47 10

5 0
10 20 30 40 50 60 70 0 20 40 60 80 100
IF (A) RG (

Fig. 18 - Typ. Diode IRR vs. IF Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C TJ = 175°C
40
5000

30
4000
70A

QRR (nC)
IRR (A)

20 
3000 35A



10 2000
18A

0 1000
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 1400
diF /dt (A/µs) diF /dt (A/µs)

Fig. 20 - Typ. Diode IRR vs. diF/dt Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 35A; TJ = 175°C VCC = 400V; VGE = 15V; TJ = 175°C

800 25 180

RG = 5
RG = 10
600 RG = 47 20 140
RG = 100 Tsc Isc
Energy (µJ)

Current (A)
Time (µs)

400 15 100

200 10 60

0 5 20
0 10 20 30 40 50 60 70 80 9 10 11 12 13 14 15 16
IF (A) VGE (V)

Fig. 22 - Typ. Diode ERR vs. IF Fig. 23 - VGE vs. Short Circuit Time
TJ = 175°C VCC = 400V; TC = 150°C

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IRGP4750DPbF/IRGP4750D-EPbF
10000 16

14 VCES = 400V

VGE, Gate-to-Emitter Voltage (V)

Cies
VCES = 300V
1000 12
Capacitance (pF)

10

100 8
Coes
6
Cres
10 4

1 0
0 100 200 300 400 500 600 0 10 20 30 40 50 60 70 80
VCE (V) Q G, Total Gate Charge (nC)
Fig. 24 - Typ. Capacitance vs. VCE Fig. 25 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 35A
1

D = 0.50

0.1 0.20
Thermal Response ( ZthJC )

0.10
0.05
0.02 R1 R2 R3
Ri (°C/W) i (sec)
0.01 R1 R2 R3
0.01 J C
J C 0.16631 0.000327
1 2 3
1 2 3 0.23758 0.003309
SINGLE PULSE Ci= iRi
0.001 Ci= iRi 0.14552 0.01848
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

1
Thermal Response ( ZthJC )

D = 0.50
0.20
0.1 0.10 Ri (°C/W) i (sec)
0.05 R1 R2 R3 R4
0.02 R1 R2 R3 R4 0.01502 0.000029
J C
J C
0.01 0.01 1 0.26877 0.000327
2 3 4
1 2 3 4
0.40240 0.003652
Ci= iRi
Ci= iRi
0.26426 0.028923
0.001
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGP4750DPbF/IRGP4750D-EPbF

L
80 V +
DUT VCC
0 - DUT VCC
1K
Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT

4X L

DC VCC
-5V
DUT DUT / VCC
DRIVER
Rg

RSH

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

C force
R= VCC
ICM

100K

D1 22K
C sense
VCC
DUT DUT
G force 0.0075µF
Rg

E sense

E force

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

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IRGP4750DPbF/IRGP4750D-EPbF

600 90 500 75
tf tr
500 75
400 TEST 60
CURRENT
400 60
300 45
300 45

VCE (V)

ICE (A)
90% ICE

ICE (A)
VCE (V)

200 30
200 30
90% ICE
10%ICE
10% VCE 100 15
100 15 10% VCE
10% ICE

0 0 0 0
Eoff Loss
Eon Loss
-100 -15 -100 -15
-0.3 -0.1 0.1 0.3 0.5 -0.3 0 0.3 0.6 0.9
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4

40 500 500

QRR VCE
30 400 400
tRR
20
300 300

10
IF (A)

Ice (A)
Vce (V)

200 200
0

100 ICE 100

-10
Peak
IRR
-20 0 0

-30 -100 -100

-0.40 0.00 0.40 0.80 -5.00 0.00 5.00 10.00
time (µS) Time (uS)

Fig. WF3 - Typ. Diode Recovery Waveform Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.3

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IRGP4750DPbF/IRGP4750D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

Notes: This part marking information applies to devices produced after 02/26/2001

EXAMPLE: THIS IS AN IRFPE30

WITH ASSEMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30

IN THE ASSEMBLY LINE "H" LOGO 135H

56 57
DATE CODE
ASSEMBLY YEAR 1 = 2001
Note: "P" in assembly line position
indicates "Lead-Free" LOT CODE WEEK 35
LINE H

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRGP4750DPbF/IRGP4750D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information

E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y PART N U M BER
LO T C O D E 5657 IN T E R N A T IO N A L
ASSEM B LED O N W W 35, 2000 R E C T IF IE R
IN T H E A S S E M B L Y L IN E "H " LO G O 035H
56 57
D A TE C O D E
ASSEM B LY YE A R 0 = 2 0 0 0
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e " LO T C O D E W EEK 35
L IN E H

TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRGP4750DPbF/IRGP4750D-EPbF

Qualification Information†
Industrial
Qualification Level

TO-247AC
Moisture Sensitivity Level N/A
TO-247AD
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Revision History
Date Comments
Added IFM Diode Maximum Forward Current = 140A with the note  on page 1.
11/13/2014
Removed note from switching losses test condition on page 2.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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