IGBT - Field Stop

600 V, 60 A

FGH60N60SMD
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 2nd generation IGBTs offer the optimum www.onsemi.com
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential. VCES IC
Features 600 V 60 A
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for easy Parallel Operating C
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
• High Input Impedance G
• Fast Switching: EOFF = 7.5 uJ/A
• Tightened Parameter Distribution E
• This Device is Pb−Free and is RoHS Compliant
E
C
Applications G
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
COLLECTOR
(FLANGE)

TO−247−3LD
CASE 340CK

MARKING DIAGRAM

$Y&Z&3&K
FGH60N60
SMD

$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH60N60SMD = Specific Device Code

ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.

© Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:

January, 2020 − Rev. 3 FGH60N60SMD/D
 FGH60N60SMD

ABSOLUTE MAXIMUM RATINGS

Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ±20 V
Transient Gate to Emitter Voltage ±30 V
IC Collector Current TC = 25°C 120 A
TC = 100°C 60 A
ICM (Note 1) Pulsed Collector Current 180 A
IF Diode Forward Current TC = 25°C 60 A
TC = 100°C 30 A
IFM (Note 1) Pulsed Diode Maximum Forward Current 180 A
PD Maximum Power Dissipation TC = 25°C 600 W
TC = 100°C 300 W
TJ Operating Junction Temperature −55 to +175 °C
TSTG Storage Temperature Range −55 to +175 °C
TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.

THERMAL CHARACTERISTICS
Symbol Parameter Typ. Max. Unit
RqJC (IGBT) Thermal Resistance, Junction to Case − 0.25 _C/W
RqJC (Diode) Thermal Resistance, Junction to Case − 1.1 _C/W
RqJA Thermal Resistance, Junction to Ambient − 40 _C/W

PACKAGE MARKING AND ORDERING INFORMATION

Packing Qty per
Part Number Top Mark Package Method Reel Size Tape Width Tube

FGH60N60SMD FGH60N60SMD TO−247 Tube N/A N/A 30

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 FGH60N60SMD

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 mA 600 − − V
DBVCES / DTJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 mA − 0.6 − V/°C

ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA

IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA

ON CHARACTERISTICS
VGE(th) G−E Threshold Voltage IC = 250 mA, VCE = VGE 3.5 4.5 6.0 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 60 A, VGE = 15 V, − 1.9 2.5 V

IC = 60 A, VGE = 15 V,
TC = 175°C − 2.1 − V

DYNAMIC CHARACTERISTICS

Cies Input Capacitance VCE = 30 V, VGE = 0 V, − 2915 − pF

f = 1 MHz
Coes Output Capacitance − 270 − pF
Cres Reverse Transfer Capacitance − 85 − pF
SWITCHING CHARACTERISTICS

Td(on) Turn−On Delay Time VCC = 400 V, IC = 60 A, − 18 27 ns

RG = 3 W, VGE = 15 V,
Tr Rise Time Inductive Load, TC = 25°C − 47 70 ns
Td(off) Turn−Off Delay Time − 104 146 ns
Tf Fall Time − 50 68 ns
Eon Turn−On Switching Loss − 1.26 1.94 mJ
Eoff Turn−Off Switching Loss − 0.45 0.6 mJ
Ets Total Switching Loss − 1.71 2.54 mJ

Td(on) Turn−On Delay Time VCC = 400 V, IC = 60 A, − 18 − ns

RG = 3 W, VGE = 15 V,
Tr Rise Time Inductive Load, TC = 175°C − 41 − ns
Td(off) Turn−Off Delay Time − 115 − ns
Tf Fall Time − 48 − ns
Eon Turn−On Switching Loss − 2.1 − mJ
Eoff Turn−Off Switching Loss − 0.78 − mJ
Ets Total Switching Loss − 2.88 − mJ

Qg Total Gate Charge VCE = 400 V, IC = 60 A, − 189 284 nC

VGE = 15 V
Qge Gate to Emitter Charge − 20 30 nC
Qgc Gate to Collector Charge − 91 137 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 FGH60N60SMD

ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

VFM Diode Forward Voltage IF = 30 A TC = 25°C − 2.1 2.7 V

TC = 175°C − 1.7 −

Erec Reverse Recovery Energy IF = 30 A, TC = 175°C − 79 − uJ

diF/dt = 200 A/ms
Trr Diode Reverse Recovery Time TC = 25°C − 30 39 ns

TC = 175°C − 72 −

Qrr Diode Reverse Recovery Charge TC = 25°C − 44 62 nC

TC = 175°C − 238 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 FGH60N60SMD

TYPICAL PERFORMANCE CHARACTERISTICS

180 180
o 20V o 20V 12V
TC = 25 C 12V TC = 175 C 15V
15V
150 10V
Collector Current, IC (A)

Collector Current, IC (A)

150 10V

120 120

90 90

VGE = 8V
60 60
VGE = 8V

30 30

0 0
0 2 4 6 0 2 4 6
Collector−Emitter Voltage, VCE (V) Collector−Emitter Voltage, VCE (V)

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

180 180
Common Emitter
Common Emitter
VCE = 20V
150 VGE = 15V 150
Collector Current, IC (A)

o
o Collector Current, IC (A) TC = 25 C
TC = 25 C
o
o TC = 175 C
TC = 175 C
120 120

90 90

60 60

30 30

0 0
0 1 2 3 4 5 2 4 6 8 10 12

Collector−Emitter Voltage, VCE (V) Gate−Emitter Voltage,VGE (V)

Figure 3. Typical Saturation Figure 4. Transfer Characteristics
Voltage Characteristics

3.5 20
Common Emitter Common Emitter
VGE = 15V TC = −40 oC
Collector−Emitter Voltage, VCE (V)
Collector−Emitter Voltage, VCE (V)

3.0 120A 16

2.5 12

60A
2.0 8

60A
IC = 30A 120A
1.5 4
IC = 30A

1.0 0
25 50 75 100 125 150 175 4 8 12 16 20
Case Temperature, TC (5C) Gate−Emitter Voltage, VGE (V)

Figure 5. Saturation Voltage vs. Case

Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE

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 FGH60N60SMD

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

20 20
Common Emitter

Collector−Emitter Voltage, VCE (V)

Common Emitter
Collector−Emitter Voltage, VCE (V)

o
T C = 25 C TC = 175 C
o

16 16

12 12

8 8

60A 60A 120A

120A
4 4
IC = 30A

IC = 30A
0 0
4 8 12 16 20 4 8 12 16 20

Gate−Emitter Voltage, VGE (V) Gate−Emitter Voltage, VGE(V)

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE

7000 15
Common Emitter
Common Emitter

Gate−Emitter Voltage, VGE (V)

6000 VGE = 0V, f = 1MHz TC = 25oC
TC = 25oC 12
VCC = 200V
5000
Capacitance (pF)

300V
9
4000 400V
Cies
3000
6

2000
Coes 3
1000
Cres

0 0
0.1 1 10 30 0 40 80 120 160 200

Collector−Emitter Voltage, VCE (V) Gate Charge, Qg(nC)

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

300 100
10 ms 80
100
tr
100ms
60
Collector Current, IC (A)

1ms
Switching Time (ns)

10 ms
10 DC
40

td(on)
1
Common Emitter
VCC = 400V, V GE = 15V
*Notes: 20
IC = 60A
0.1 1.TC = 25 5C o
TC = 25 C
2.TJ = 175 5C o
TC = 175 C
3. Single Pulse
0.01 10
1 10 100 1000 0 10 20 30 40 50
Collector−Emitter Voltage, VCE (V) Gate Resistance, RG (W)

Figure 11. SOA Characteristics Figure 12. Turn−on Characteristics

vs. Gate Resistance

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 FGH60N60SMD

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

6000 1000
Common Emitter Common Emitter
VCC = 400V, VGE = 15V VGE = 15V, RG = 3 W
IC = 60A o
TC = 25 C
o
1000 TC = 25 C o
100 TC = 175 C tr

Switching Time (ns)

Switching Time (ns)

o
TC = 175 C
td(off)

td(on)
100 10
tf

10 1
0 10 20 30 40 50 0 30 60 90 120
Gate Resistance, RG (W) Collector Current, IC (A)

Figure 14. Turn−on Characteristics

Figure 13. Turn−off Characteristics
vs. Collector Current
vs. Gate Resistance

1000 5

Eon
td(off)
Switching Time (ns)

Switching Loss (mJ)

100
1
tf Eoff

Common Emitter
10 VCC = 400V, V GE = 15V
Common Emitter
VGE = 15V, RG = 3 W IC = 60A
o o
TC = 25 C TC = 25 C
o o
TC = 175 C TC = 175 C

1 0.1
0 30 60 90 120 0 10 20 30 40 50
Collector Current, IC (A) Gate Resistance, RG (W)

Figure 15. Turn−off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance

10 300

100
Eon
Collector Current, IC (A)
Switching Loss (mJ)

Eoff
10
0.1 Common Emitter
VGE = 15V, RG = 3 W
o
TC = 25 C Safe Operating Area
o o
TC = 175 C VGE = 15V, TC = 175 C

0.01 1
0 30 60 90 120 1 10 100 1000
Collector Current, IC (A) Collector−Emitter Voltage, VCE (V)

Figure 17. Switching Loss vs. Collector Current Figure 18. Turn Off Switching SOA Characteristics

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 FGH60N60SMD

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

130 180
120 Common Emitter Square Wave
VGE = 15V 160 o
TJ < 175 C,D = 0.5,VCE = 400V
110

Collector Current, IC (A)

VGE = 15/0V, RG = 3 W
140
Collector Current, IC (A)

100
90 120
80
70 100 Tc = 75 C
o

60 80
50 o
Tc = 100 C
60
40
30 40
20
20
10
0
25 50 75 100 125 150 175 1k 10k 100k 1M
o

Case Temperature, TC (5C) Switching Frequency, f (Hz)

Figure 19. Current Derating Figure 20. Load Current vs. Frequency

200
10000
o
TC = 175 C
100
o 1000
TC = 175 C
Forward Current, IF (A)

Reverse Current, IR (mA)

100 TC = 125 C
o

o
TC = 125 C
o
10
10 TC = 75 C o
TC = 75 C
o
TC = 25 C o 1
TC = 25 C
o
TC = 75 C −−−−
TC = 125 C −−−−
o
0.1 TC = 25 C
o

o
TC = 175 C
1
0.01
0 1 2 3 4 0 100 200 300 400 500 600
Forward Voltage, VF (V) Reverse Voltage, VR (V)

Figure 21. Forward Characteristics Figure 22. Reverse Current

350 100
o o
TC = 25 C TC = 25 C
300 o
TC = 175 C −−−− 90 o
Stored Recovery Charge, Qrr (nC)

TC = 175 C −−−−
Reverse Recovery Time, Trr (ns)

80
250
70
200
60
150 diF/dt = 100A/ ms
50
diF/dt = 200A/ ms
diF/dt = 100A/ ms
100 diF/dt = 200A/ ms
40
50
30

0 20
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Forward Current, IF (A) Forward Current, IF (A)

Figure 23. Stored Charge Figure 24. Reverse Recovery Time

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 FGH60N60SMD

0.5

Thermal Response (Zthjc)

0.5
0.1
0.2
0.1
0.05
0.02
0.01 PDM
0.01
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E−3
1E−5 1E−4 1E−3 0.01 0.1 1
Rectangular Pulse Duration (sec)

Figure 25. Transient Thermal Impedance of IGBT

1
Thermal Response (Zthjc)

0.5

0.2
0.1 0.1
0.05
0.02
0.01 PDM
0.01 single pulse t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E−3
1E−5 1E−4 1E−3 0.01 0.1 1

Rectangular Pulse Duration (sec)

Figure 26. Transient Thermal Impedance of Diode

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−3LD SHORT LEAD

CASE 340CK
ISSUE A
DATE 31 JAN 2019
A P1
A E
A2
P D2

Q
E2
S
D1
D B E1

2
1 2 3

L1
A1

b4 L

c
(3X) b
(2X) b2 0.25 M B A M
MILLIMETERS
(2X) e DIM
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
GENERIC D 20.32 20.57 20.82
MARKING DIAGRAM*
D1 13.08 ~ ~
AYWWZZ D2 0.51 0.93 1.35
XXXXXXX E 15.37 15.62 15.87
XXXXXXX E1 12.81 ~ ~
E2 4.96 5.08 5.20
XXXX = Specific Device Code e ~ 5.56 ~
A = Assembly Location
Y = Year L 15.75 16.00 16.25
WW = Work Week L1 3.69 3.81 3.93
ZZ = Assembly Lot Code
P 3.51 3.58 3.65
*This information is generic. Please refer to
device data sheet for actual part marking. P1 6.60 6.80 7.00
Pb−Free indicator, “G” or microdot “G”, may Q 5.34 5.46 5.58
or may not be present. Some products may
not follow the Generic Marking. S 5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13851G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−247−3LD SHORT LEAD PAGE 1 OF 1

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