Professional Documents
Culture Documents
RJP6065DPM
Silicon N Channel IGBT R07DS0204EJ0100
Rev.1.00
High Speed Power Switching Nov 19, 2010
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)
Gate to emitter voltage rating 30 V
Pb-free lead plating and chip bonding
Outline
1. Gate
G 2. Collector
3. Emitter
1
2
3
www.DataSheet.co.kr
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current ICES — — 1 A VCE = 630 V, VGE = 0
Gate to emitter leak current IGES — — ±100 nA VGE = ± 30 V, VCE = 0
Gate to emitter cutoff voltage VGE(off) 3 — 5.5 V VCE = 10 V, IC = 1 mA
Collector to emitter saturation voltage VCE(sat) — 1.8 2.3 V IC = 40 A, VGE = 15 V Note2
Collector to emitter saturation voltage VCE(sat) — 1.5 — V IC = 20 A, VGE = 15 V Note2
Input capacitance Cies — 1130 — pF VCE = 25 V
Output capacitance Coes — 95 — pF VGE = 0
Reveres transfer capacitance Cres — 10 — pF f = 1 MHz
Switching time td(on) — 40 — ns IC = 40 A, Resistive Load
tr — 90 — ns RL = 7.5
td(off) — 80 — ns VGE = 15 V
tf — 450 — ns Rg = 5
www.DataSheet.co.kr
Main Characteristics
50 50
30 30
20 20
10 10
0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
100 PW 80 9V
=
10 8V
μs 10 V
10
0μ
10 60 15 V
7.5 V
s
1 www.DataSheet.co.kr
40 7V
6.5 V
0.1 20
Tc = 25°C VGE = 6 V
Single pulse
0.01 0
0.1 1 10 100 1000 0 1 2 3 4 5
Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V)
100 10
VCE = 10 V Pulse Test
Pulse Test Ta = 25°C
Collector Current IC (A)
80 8
IC = 20 A
60 6
Tc = 125°C 40 A
60 A
40 75°C 4
25°C
20 2
–25°C
0 0
0 2 4 6 8 10 0 4 8 12 16 20
Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V)
4 6
IC = 40 mA
IC = 80 A 5
3
60 A
4
40 A 10 mA
2 3
20 A 1 mA
2
1
1
VGE = 15 V VCE = 10 V
Pulse Test Pulse Test
0 0
−25 0 25 50 75 100 125 150 −25 0 25 50 75 100 125 150
100 400 8
Coes
10 200 4
Cres
VGE = 0 V www.DataSheet.co.kr
VCE = 500 V
f = 1 MHz 300 V
1 Ta = 25°C
0 0
0 50 100 150 200 300 0 8 16 24 32 40
td(off)
100
tr
td(on)
100 td(off)
tr
10
td(on)
tf
tr
100 td(off)
td(on)
IC = 40 A, RL = 7.5 Ω
10
0 25 50 75 100 125 150
D=1
1
0.5
Ic Monitor 90%
RL
Vin 10%
Vin Monitor
90% 90%
Rg VCC
D.U.T.
www.DataSheet.co.kr
Ic 10%
Vin = 15 V 10%
td(on) td(off) tf
tr
ton toff
Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
TO-3PFM SC-93 PRSS0003ZA-A TO-3PFM / TO-3PFMV 5.2g Unit: mm
5.0 ± 0.3
15.6 ± 0.3 5.5 ± 0.3
+ 0.4
φ3.2 – 0.2
19.9 ± 0.3
2.0 ± 0.3
2.7 ± 0.3
5.0 ± 0.3
3.2 ± 0.3
4.0 ± 0.3
2.6 1.6
21.0 ± 0.5
0.86 0.86
+ 0.2
0.66 – 0.1 0.9 +– 0.1
0.2
Ordering Information
Orderable Part No. Quantity Shipping Container
www.DataSheet.co.kr
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.