Preliminary Datasheet

RJP30H2DPK-M0 / RJP30H2A
Silicon N Channel IGBT R07DS0467EJ0200
Rev.2.00
High speed power switching Jun 15, 2011

Features
 Trench gate and thin wafer technology (G6H-II series)
 Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
 High speed switching: tf = 100 ns typ, tf = 180 ns typ
 Low leak current: ICES = 1 A max

Outline

RENESAS Package code: PRSS0004ZH-A

(Package name: TO-3PSG)
C
4

1. Gate
2. Collector
G
3. Emitter
4. Collector (Flange)
1
2
3 E

Absolute Maximum Ratings www.DataSheet.co.kr

(Ta = 25°C)
Item Symbol Ratings Unit
Collector to Emitter voltage VCES 360 V
Gate to Emitter voltage VGES ±30 V
Collector current Ic 35 A
Collector peak current ic(peak) Note1 250 A
Collector dissipation PC Note2 60 W
Junction to case thermal impedance j-c 2.08 °C/ W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW  10 s, duty cycle  1%
2. Tc = 25C

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RJP30H2DPK-M0 Preliminary

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current ICES — — 1 A VCE = 360 V, VGE = 0
Gate to emitter leak current IGES — — ±100 nA VGE = ± 30 V, VCE = 0
Gate to emitter cutoff voltage VGE(off) 2.5 — 5 V VCE = 10 V, IC = 1 mA
Collector to emitter saturation voltage VCE(sat) — 1.4 1.9 V IC = 35 A, VGE = 15 V Note3
Input capacitance Cies — 1200 — pF VCE = 25 V
Output capacitance Coes — 60 — pF VGE = 0
Reveres transfer capacitance Cres — 30 — pF f = 1 MHz
Total gate charge Qg — 37 — nC VGE = 15 V
Gate to emitter charge Qge — 6 — nC VCE = 150 V
Gate to collector charge Qgc — 10 — nC IC = 35 A
Switching time td(on) — 0.02 — s IC = 35 A
tr — 0.1 — s RL = 4.5 
td(off) — 0.06 — s VGE = 15 V
tf — 0.18 — s RG = 5 

Notes: 3. Pulse test.

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Jun 15, 2011
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RJP30H2DPK-M0 Preliminary

Main Characteristics

Maximum Safe Operation Area Typical Output Characteristics (1)

1000 100
Ta = 25°C 7V
10 Pulse Test

Collector Current IC (A)

6.5 V
Collector Current IC (A)

100 μs 80 8V
10 V

PW
15 V

=
10 60 6V

10
0μ
s
1 40
5.5 V

0.1 20
VGE = 5 V
Ta = 25°C
1 shot pulse
0.01 0
0.1 1 10 100 1000 0 1 2 3 4 5

Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V)

Typical Output Characteristics (2) Typical Transfer Characteristics

200 50
10 V 9V VCE = 10 V
12 V Pulse Test
Collector Current IC (A)

Collector Current IC (A)

160 8V 40
15 V

7V Tc = 75°C
120 30
25°C
–25°C
80 Ta = 25°C 20
Pulse Test 6V
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40 10
VGE = 5 V

0 0
0 2 4 6 8 10 0 2 4 6 8 10

Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V)

Collector to Emitter Saturation Voltage Collector to Emitter Saturation Voltage

vs. Gate to Emitter Voltage (Typical) vs. Collector Current (Typical)
VCE(sat) (V)

VCE(sat) (V)
Collector to Emitter Saturation Voltage

Collector to Emitter Saturation Voltage

5 10
VGE = 15 V
Pulse Test
4
IC = 35 A
80 A
3 Tc = –25°C
120 A
1
2
25°C 75°C

1
Pulse Test
Ta = 25°C
0 0.1
0 4 8 12 16 20 1 10 100

Gate to Emitter Voltage VGE (V) Collector Current IC (A)

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RJP30H2DPK-M0 Preliminary

Typical Capacitance vs.

Colloctor to Emitter Voltage Dynamic Input Characteristics (Typical)

Colloctor to Emitter Voltage VCE (V)

10000 400 16

Gate to Emitter Voltage VGE (V)

VGE = 0 V, f = 1 MHz VCC = 150 V VGE
Ta = 25°C IC = 35 A
Ta = 25°C
Capacitance C (pF)

Cies 300 12
1000

200 8

100
100 4
Coes

Cres VCE
10 0 0
0 20 40 60 80 100 0 8 16 24 32 40

Colloctor to Emitter Voltage VCE (V) Gate Charge Qg (nC)

Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2)

1000 1000
VCC = 150 V, VGE = 15 V IC = 35 A, VGE = 15 V
Rg = 5 Ω, Ta = 25°C RL = 4.5 Ω, Ta = 25°C
Switching Time t (ns)

Switching Time t (ns)

tf tf

tr
100 100
td(off)
td(off)

tr www.DataSheet.co.kr
td(on)
td(on)
10 10
1 10 100 1 10 100

Colloctor Current IC (A) Gate Resistance Rg (Ω)

Switching Characteristics (Typical) (3)

1000
IC = 35 A, VGE = 15 V
RL = 4.5 Ω, Rg = 5 Ω
Switching Time t (ns)

tf

tr
100
td(off)

td(on)

10
0 25 50 75 100 125 150

Case Temperature Tc (°C)

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RJP30H2DPK-M0 Preliminary

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermal Impedance γs (t)

3
Tc = 25°C

D=1
1
0.5

0.3
0.2

0.1
0.1 θj−c(t) = γs (t) θj−c
0.05
θj−c = 2.08°C/W, Tc = 25°C
0.02
1 PDM PW
0.0
D=
se
0.03 T
ul
tp

PW
ho

T
1s

0.01
10 μ 100 μ 1m 10 m 100 m 1

Pulse Width PW (s)

Switching Time Test Circuit Waveform

Ic Monitor 90%

RL
Vin 10%
Vin Monitor

90% 90%
Rg VCC
D.U.T.
Ic 10%
Vin = 15 V 10%
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td(on) td(off)
tr tf

ton toff

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RJP30H2DPK-M0 Preliminary

Package Dimension
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
TO-3PSG ⎯ PRSS0004ZH-A TO-3PSG/TO-3PSGV 3.7g
Unit: mm

5.00 ± 0.3
15.60 ± 0.2
4.80 ± 0.2
13.60
0.60 ± 0.2
φ3.2 ± 0.2

3.8

18.70 ± 0.2
1.0
14.90 ± 0.1

0.50typ
3.50

2.0
2.4 1.40
20.0 ± 0.2

3-1.00 ± 0.2

5.45 ± 0.5 5.45 ± 0.5 0.60 ± 0.1

1.50 ± 0.2

2.825 ± 0.15

Package
Part Number: RJP30H2A

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Jun 15, 2011
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