FGA60N65SMD — 650 V, 60 A Field Stop IGBT

October 2013

FGA60N65SMD
650 V, 60 A Field Stop IGBT
Features General Description
• Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchild’s new series of
• Positive Temperature Co-efficient for Easy Parallel Operating field stop 2nd generation IGBTs offer the optimum performance
• High Current Capability for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A
• Fast Switching : EOFF = 7.5 uJ/A
• Tighten Parameter Distribution
• RoHS Compliant

Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS

TO-3PN
G CE E

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 650 V
Gate to Emitter Voltage ± 20 V
VGES
Transient Gate to Emitter Voltage ± 30 V
Collector Current @ TC = 25oC 120 A
IC
Collector Current @ TC = 100oC 60 A
ICM (1) Pulsed Collector Current 180 A
Diode Forward Current @ TC = 25oC 60 A
IF
Diode Forward Current @ TC = 100oC 30 A
IFM (1) Pulsed Diode Maximum Forward Current 180 A
Maximum Power Dissipation @ TC = 25oC 600 W
PD
Maximum Power Dissipation @ TC = 100oC 300 W
o
TJ Operating Junction Temperature -55 to +175 C
Tstg o
Storage Temperature Range -55 to +175 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8” from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGA60N65SMD Rev. C2 http://www.Datasheet4U.com
 FGA60N65SMD — 650 V, 60 A Field Stop IGBT
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
o
RθJC(IGBT) Thermal Resistance, Junction to Case - 0.25 C/W
RθJC(Diode) Thermal Resistance, Junction to Case - 1.1 oC/W

RθJA Thermal Resistance, Junction to Ambient - 40 oC/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FGA60N65SMD FGA60N65SMD TO-3PN - - 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA 650 - - V
ΔBVCES Temperature Coefficient of Breakdown
ΔTJ Voltage
VGE = 0V, IC = 250μA - 0.6 - V/oC

ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 μA

IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250μA, VCE = VGE 3.5 4.5 6.0 V
IC = 60A, VGE = 15V - 1.9 2.5 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 60A, VGE = 15V,
- 2.1 - V
TC = 175oC

Dynamic Characteristics
Cies Input Capacitance - 2915 - pF
VCE = 30V, VGE = 0V,
Coes Output Capacitance - 270 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 85 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 18 27 ns
tr Rise Time - 47 70 ns
td(off) Turn-Off Delay Time VCC = 400V, IC = 60A, - 104 146 ns
tf Fall Time RG = 3Ω, VGE = 15V, - 50 68 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 1.54 2.31 mJ
Eoff Turn-Off Switching Loss - 0.45 0.60 mJ
Ets Total Switching Loss - 1.99 2.91 mJ
td(on) Turn-On Delay Time - 18 - ns
tr Rise Time - 41 - ns
td(off) Turn-Off Delay Time VCC = 400V, IC = 60A, - 115 - ns
tf Fall Time RG = 3Ω, VGE = 15V, - 48 - ns
Inductive Load, TC = 175oC
Eon Turn-On Switching Loss - 2.08 - mJ
Eoff Turn-Off Switching Loss - 0.78 - mJ
Ets Total Switching Loss - 2.86 - mJ

©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGA60N65SMD Rev. C2
 FGA60N65SMD — 650 V, 60 A Field Stop IGBT
Electrical Characteristics of the IGBT (Continued)

Symbol Parameter Test Conditions Min. Typ. Max Unit

Qg Total Gate Charge - 189 284 nC
VCE = 400V, IC = 60A,
Qge Gate to Emitter Charge - 20 30 nC
VGE = 15V
Qgc Gate to Collector Charge - 91 137 nC

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit

TC = 25oC - 2.1 2.6
VFM Diode Forward Voltage IF = 30A V
TC = 175oC - 1.7 -
Erec Reverse Recovery Energy TC = 175oC - 127 - uJ
TC = 25oC - 47 -
trr Diode Reverse Recovery Time IF =30A, ns
dIF/dt = 200A/μs TC = 175oC - 212 -
TC = 25oC - 87 -
Qrr Diode Reverse Recovery Charge nC
TC = 175oC - 933 -

©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGA60N65SMD Rev. C2
 FGA60N65SMD — 650 V, 60 A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

180 180
o 20V o 20V 12V
TC = 25 C 12V TC = 175 C
15V 15V
150 10V 150 10V
Collector Current, IC [A]

Collector Current, IC [A]

120 120

90 90

VGE = 8V
60 60
VGE = 8V

30 30

0 0
0 2 4 6 0 2 4 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case

Characteristics Temperature at Variant Current Level
180 3.5
Common Emitter
Collector-Emitter Voltage, VCE [V]

Common Emitter VGE = 15V

150 VGE = 15V
o
3.0 120A
TC = 25 C
Collector Current, IC [A]

o
TC = 175 C
120
2.5

90
60A
2.0
60
IC = 30A
1.5
30

0 1.0
0 1 2 3 4 5 25 50 75 100 125 150 175
o
Collector-Emitter Voltage, VCE [V] Case Temperature, TC [ C]

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE

20 20
Common Emitter Common Emitter
o
Collector-Emitter Voltage, VCE [V]

T C = 25 C TC = 175 C
o
Collector-Emitter Voltage, VCE [V]

16 16

12 12

8 8

60A 60A 120A

120A
4 4
IC = 30A

IC = 30A
0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, V GE [V] Gate-Emitter Voltage, VGE [V]

©2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGA60N65SMD Rev. C2
 FGA60N65SMD — 650 V, 60 A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics

7000 15
Common Emitter Common Emitter
o
6000 VGE = 0V, f = 1MHz TC = 25 C

Gate-Emitter Voltage, VGE [V]

TC = 25 C
o 12
VCC = 200V
5000
Capacitance [pF]

300V
9
4000 400V
Cies
3000
6

2000
Coes 3
1000
Cres

0 0
0.1 1 10 30 0 40 80 120 160 200
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 9. Turn-on Characteristics vs. Figure 9. Turn-off Characteristics vs.

Gate Resistance Gate Resistance
100 6000
Common Emitter
80 VCC = 400V, VGE = 15V
tr
IC = 60A
60 o
1000 TC = 25 C
Switching Time [ns]
Switching Time [ns]

o
TC = 175 C
40 td(off)

td(on)

Common Emitter
VCC = 400V, VGE = 15V 100
20 tf
IC = 60A
o
TC = 25 C
o
TC = 175 C

10 10
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance, RG [Ω] Gate Resistance, RG [Ω]

Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
10 1000
Common Emitter
VGE = 15V, RG = 3Ω
o
TC = 25 C
Eon o
TC = 175 C tr
Switching Time [ns]
Switching Loss [mJ]

100

1 Eoff

td(on)
Common Emitter
VCC = 400V, VGE = 15V 10
IC = 60A
o
TC = 25 C
o
TC = 175 C
0.1 1
0 10 20 30 40 50 0 30 60 90 120
Gate Resistance, RG [Ω] Collector Current, IC [A]

©2011 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGA60N65SMD Rev. C2
 FGA60N65SMD — 650 V, 60 A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs..
Collector Current Collector Current
1000 10
Eon

td(off)

Switching Loss [mJ]

Switching Time [ns]

100 1

Eoff
tf

10 0.1 Common Emitter

Common Emitter
VGE = 15V, RG = 3Ω
VGE = 15V, RG = 3Ω
o
o
TC = 25 C TC = 25 C
o
TC = 175 C
o TC = 175 C

1 0.01
0 30 60 90 120
0 30 60 90 120
Collector Current, IC [A]
Collector Current, IC [A]

Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics

120 300
Vcc = 400 V
Load Current 100 10μs
100 : peak of square wave
Duty cycle : 50% 100μs
Collector Current, IC [A]

o 1ms
Collector Current, Ic [A]

Tc = 100 C 10 ms
80 Power Dissipation 10 DC
o : 300W
Tc = 100 C
60
1

40
*Notes:
0.1 o
1. TC = 25 C
20 o
2. TJ = 175 C
3. Single Pulse
0 0.01
1k 10k 100k 1M 1 10 100 1000
Switching Frequency, f [Hz] Collector-Emitter Voltage, VCE [V]

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

200 14
o
TC = 25 C
100 12
Reverse Recovery Current, Irr [A]

o
TC = 175 C
o
TC = 175 C
Forward Current, IF [A]

10
o
TC = 125 C 8
o
TC = 75 C
10 6
o
TC = 175 C di/dt =100A/uS
4 di/dt = 200A/uS
o
TC = 125 C
o
TC = 75 C 2
o
TC = 25 C o
TC = 25 C
1 0
01 23 4 0 10 20 30 40
Forward Voltage, VF [V] Forward Current, IF [A]

©2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGA60N65SMD Rev. C2
 FGA60N65SMD — 650 V, 60 A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Reverse Recovery Time Figure 20. Stored Charge

400 1400
o o
TC = 25 C TC = 25 C

Stored Recovery Charge, Qrr [nC]

1200
Reverse Recovery Time, trr [ns]

o o
TC = 175 C TC = 175 C
300
1000

800
200

didt = 200A/uS didt =100A/uS 600

50 didt =100A/uS
400 didt = 200A/uS

200

0 0
0 15 30 45 60 0 10 20 30 40 50 60
Forward Current, IF [A] Forward Current, IF [A]

Figure 21.Transient Thermal Impedance of IGBT

0.5
Thermal Response [Zthjc]

0.5
0.1
0.2

0.1
0.05
0.02
0.01 0.01 PDM

single pulse t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

igure
F 22.Transient Thermal Impedance of Diode

3
Thermal Response [Zthjc]

1
0.5

0.2
0.1
0.1
0.05
PDM
0.02
0.01 t1
t2
single pulse
Duty Factor, D = t1/t2
0.01 Peak Tj = Pdm x Zthjc + TC
0.005
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

©2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGA60N65SMD Rev. C2
 FGA60N65SMD — 650 V, 60 A Field Stop IGBT
Mechanical Dimensions

Figure 20. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65

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Dimensions in Millimeters

©2011 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGA60N65SMD Rev. C2
 FGA60N65SMD — 650 V, 60 A Field Stop IGBT
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Datasheet contains the design specifications for product development. Specifications
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Rev. I66

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FGA60N65SMD Rev. C2