2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor

July 2008

2SC5242/FJA4313
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier

Features
• High Current Capability: IC = 15A 1 TO-3P
• High Power Dissipation : 130watts
1.Base 2.Collector 3.Emitter
• High Frequency : 30MHz.
• High Voltage : VCEO=230V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SA1962/FJA4213.
• Thermal and electrical Spice models are available
• Same transistor is also available in:
--TO264 package, 2SC5200/FJL4315 : 150 watts
--TO220 package, FJP5200 : 80 watts
--TO220F package, FJPF5200 : 50 watts

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Symbol Parameter Ratings Units

BVCBO Collector-Base Voltage 230 V

BVCEO Collector-Emitter Voltage 230 V

BVEBO Emitter-Base Voltage 5 V

IC Collector Current(DC) 15 A

IB Base Current 1.5 A

PD Total Device Dissipation(TC=25°C) 130 W

Derate above 25°C 1.04 W/°C

TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* Ta=25°C unless otherwise noted

Symbol Parameter Max. Units

RθJC Thermal Resistance, Junction to Case 0.96 °C/W
* Device mounted on minimum pad size

hFE Classification
Classification R O
hFE1 55 ~ 110 80 ~ 160

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SC5242/FJA4313 Rev. A3 1
 2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor
Electrical Characteristics* T =25°C unless otherwise noted
a

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collector-Base Breakdown Voltage IC=5mA, IE=0 230 V

BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ 230 V

BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V

ICBO Collector Cut-off Current VCB=230V, IE=0 5.0 µA

IEBO Emitter Cut-off Current VEB=5V, IC=0 5.0 µA

hFE1 DC Current Gain VCE=5V, IC=1A 55 160

hFE2 DC Current Gain VCE=5V, IC=7A 35 60

VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V

VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V

fT Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz

Cob Output Capacitance VCB=10V, f=1MHz 200 pF

* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%

Ordering Information
Part Number Marking Package Packing Method Remarks
2SC5242RTU C5242R TO-3P TUBE hFE1 R grade
2SC5242OTU C5242O TO-3P TUBE hFE1 O grade
FJA4313RTU J4313R TO-3P TUBE hFE1 R grade
FJA4313OTU J4313O TO-3P TUBE hFE1 O grade

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SC5242/FJA4313 Rev. A3 2
 2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor
Typical Characteristics

16
IB=200mA
IB = 180mA o
Tj=125 C o
Tj=25 C
14 Vce=5V
IB = 160mA
IC[A], COLLECTOR CURRENT

IB = 140mA
12

hFE, DC CURRENT GAIN

IB = 120mA 100
o
10 IB = 100mA Tj=-25 C

IB = 80mA
8
IB = 60mA
6
10
IB = 40mA
4

IB = 0
0
0 2 4 6 8 10 12 14 16 18 20 1
1 10
VCE[V], COLLECTOR-EMITTER VOLTAGE Ic[A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

10000 10000
Vbe(sat)[mV], SATURATION VOLTAGE

Vce(sat)[mV], SATURATION VOLTAGE

Ic=10Ib Ic=10Ib

1000

o o Tj=25?
Tj=-25 C Tj=25 C Tj=125?
1000 100

o Tj=-25?
Tj=125 C
10

100 1
0.1 1 10 0.1 1 10

Ic[A], COLLECTOR CURRENT Ic[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

12 1.0
Transient Thermal Resistance, Rthjc[ C / W]

VCE = 5V
0.9
10
o
IC[A], COLLECTOR CURRENT

0.8

0.7
8

0.6

6 0.5

0.4
4
0.3

0.2
2
0.1

0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1

VBE[V], BASE-EMITTER VOLTAGE Pulse duration [sec]

Figure 5. Base-Emitter On Voltage Figure 6. Thermal Resistance

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SC5242/FJA4313 Rev. A3 3
 2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor
Typical Characteristics

-100
160
IC MAX. (Pulsed*)
140

IC [A], COLLECTOR CURRENT

10ms*
-10
PC[W], POWER DISSIPATION

120 IC MAX. (DC)

100ms*
100
DC
-1
80

60

40 -0.1

*SINGLE NONREPETITIVE
20 o
PULSE TC=25[ C]
0 -0.01
0 25 50 75 100 125 150 175 1 10 100

o
TC[ C], CASE TEMPERATURE VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 7. Power Derating Figure 8. Safe Operating Area

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SC5242/FJA4313 Rev. A3 4
 2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor
Package Dimensions

TO-3P

15.60 ±0.20
4.80 ±0.20
13.60 ±0.20

3.80 ±0.20
ø3.20 ±0.10 +0.15
9.60 ±0.20 1.50 –0.05

18.70 ±0.20
12.76 ±0.20

19.90 ±0.20

23.40 ±0.20
13.90 ±0.20

2.00 ±0.20
3.50 ±0.20

3.00 ±0.20
16.50 ±0.30

1.00 ±0.20 1.40 ±0.20

+0.15
0.60 –0.05
5.45TYP 5.45TYP
[5.45 ±0.30] [5.45 ±0.30]

Dimensions in Millimeters

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SC5242/FJA4313 Rev. A3 5
 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SC5242/FJA4313 Rev. A3 6