SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BUH417D

DESCRIPTION
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·With TO-3PML package
·High voltage
·High speed switching
·Built-in damper diode

APPLICATIONS
·Switching power supply for TV’s
and monitors

PINNING

PIN DESCRIPTION

1 Base

2 Collector

Fig.1 simplified outline (TO-3PML) and symbol

3 Emitter

Absolute maximum ratings(Ta=25 )

SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 700 V

VEBO Emitter-base voltage Open collector 10 V

IC Collector current (DC) 7 A

ICM Collector current -peak tp<5ms 12 A

IB Base current (DC) 4 A

IBM Base current -peak tp<5ms 7 A

Ptot Total power dissipation TC=25 55 W

Tj Junction temperature 150

Tstg Storage temperature -65~150

 SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BUH417D

CHARACTERISTICS
Tj=25 unless otherwise specified
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SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V

VCEsat Collector-emitter saturation voltage IC=4A ; IB=1A 1.5 V

VBEsat Base-emitter saturation voltage IC=4A ; IB=1A 1.3 V

VCE=1700V; VBE=0 1.0

ICES Collector cut-off current mA
Tj=125 2.0

IEBO Emitter cut-off current VEB=5V; IC=0 200 mA

hFE-1 DC current gain IC=1A ; VCE=5V 8 36

hFE-2 DC current gain IC=4A ; VCE=5V 6

VF Diode forward voltage IF=4A 2 V

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal resistance from junction to case 2.27 /W

2
 SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BUH417D

PACKAGE OUTLINE

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Fig.2 Outline dimensions