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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FJL6920
FJL6920
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1700V
• Low Saturation Voltage : VCE(sat) = 3V (Max.)
• For Color Monitor

1 TO-264
1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor


Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Rating Units
VCBO Collector-Base Voltage 1700 V
VCEO Collector-Emitter Voltage 800 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current (DC) 20 A
ICP* Collector Current (Pulse) 30 A
PC Collector Dissipation 200 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed

Electrical Characteristics TC=25°C unless otherwise noted


Symbol Parameter Test Conditions Min. Typ. Max. Units
ICES Collector Cut-off Current VCB=1400V, RBE=0 1 mA
ICBO Collector Cut-off Current VCB=800V, IE=0 10 µA
IEBO Emitter Cut-off Current VEB=4V, IC=0 1 mA
BVCBO Collector-Base Breakdown Voltage IC=500µA, IE=0 1700 V
BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 V
BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 V
hFE1 DC Current Gain VCE=5V, IC=1A 8
hFE2 VCE=5V, IC=11A 5.5 8.5
VCE(sat) Collector-Emitter Saturation Voltage IC=11A, IB=2.75A 3 V
VBE(sat) Base-Emitter Saturation Voltage IC=11A, IB=2.75A 1.5 V
tSTG* Storage Time VCC=200V, IC=10A, RL=20Ω 3 µs
tF* Fall Time IB1=2.0A, IB2= - 4.0A 0.15 0.2 µs
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed

Thermal Characteristics TC=25°C unless otherwise noted


Symbol Parameter Typ Max Units
RθjC Thermal Resistance, Junction to Case 0.625 °C/W

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001


FJL6920
Typical Characteristics

16 100
IB=4.0A
VCE = 5V
14
o
IC [A], COLLECTOR CURRENT

o Ta = 25 C
IB=2.0A Ta = 125 C
12

hFE, DC CURRENT GAIN


IB =1.5A
10

o
IB =1.0A Ta = - 25 C
8 10

6
IB=0.5A

4
IB=0.2A
2

0 1
0 2 4 6 8 10 0.1 1 10 100

VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT

Figure 1. Static Characteristics Figure 2. DC Current Gain

10 10

IC = 3 IB IC = 5 IB
VCE(SAT) [V], SATURATION VOLTAGE
VCE(SAT) [V], SATURATION VOLTAGE

o
Ta = 125 C o
Ta = 125 C
1 1
o
Ta = 25 C
o o
Ta = - 25 C Ta = 25 C

o
0.1 0.1 Ta = - 25 C

0.01 0.01
0.1 1 10 100 0.1 1 10 100

IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

16 10

VCE = 5V VCC = 200V,


14 IC = 10A, IB1 = 2A
tSTG & tF [µs], SWITCHING TIME
IC [A], COLLECTOR CURRENT

12
tSTG
1
10

6 tF
0.1

2
o o o
125 C 25 C - 25 C
0 0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10

VBE [V], BASE-EMITTER VOLTAGE IB2 [A], REVERSE BASE CURRENT

Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001


FJL6920
Typical Characteristics (Continued)

100

VCC = 200V, VCC = 200V,


IC = 10A, IB2 = - 4A 10 IB1 = 2A, IB2 = - 4A
tSTG & tF [µs], SWITCHING TIME

tSTG & tF [µs], SWITCHING TIME


10

tSTG

tSTG
1 1

tF
0.1
tF
0.1

0.01
1 10 1 10

IB1 [A], FORWARD BASE CURRENT IC [A], COLLECTOR CURRENT

Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time

100 40

IC (Pulse) t = 100ms t = 10ms RB2 = 0, IB1 = 15A


35
t = 1ms VCC = 30V, L = 200µ H
IC [A], COLLECTOR CURRENT

IC [A], COLLECTOR CURRENT

IC (DC)
10 30

25

1 20

15
VBE(off) = -6V
0.1 10
V BE(off) = -3V
o
TC = 25 C 5
Single Pulse
0.01 1
1 10 100 1000 10000 10 100 1000 10000

VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 9. Forward Bias Safe Operating Area Figure 10. Reverse Bias Safe Operating Area

300

250
PC [W], POWER DISSIPATION

200

150

100

50

0
0 25 50 75 100 125 150 175

O
TC [ C], CASE TEMPERATURE

Figure 11. Power Derating

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001


18.30
17.70
20.20 5.20
B A 16.60
19.80 4.80

1.00 7.40
2.00 12.00
6.20 3.50 7.00
C R2.00 C
5.80 3.10
0.254 A B

1.20
0.80

9.10
C 0.50 21.62
8.90
21.02
20.20
19.80
R1.00 C
1.70
1.30

1.50
4.05 3.20 2.60
C
2.80 2.40
3.10 1.50 1.50
C
2.70 20.50 2.50
C 2X C
2.30 19.50
1.25
C
0.90
0.254 M A B

5.75 5.75 0.85


C
5.15 5.15 0.50

FRONT VIEW SIDE VIEW BACK VIEW

3.70 5.20
0.15 3.30 4.80

BOTTOM VIEW
NOTES:

A. PACKAGE REFERENCE: JEDEC TO264


VARIATION AA.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C OUT OF JEDEC STANDARD VALUE.
D. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
E. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
F. THIS PACKAGE IS INTENDED ONLY FOR
"FS PKG CODE AR"
G. DRAWING FILE NAME: TO264A03REV2
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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1
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FJL6920TU

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