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WBD 03D
300
HighVoltageFast-SwitchingNPNPowerTransistor
Features
■ Very High Switching Speed boll
sym bo
2.Collector
■ High Voltage Capability
General Description
This Device is designed for high Voltage ,High speed
switching Characteristics required such as lighting
system,switching mode power supply.
IC Collector Current 2 A
Thermal characteristics
Symbol Parameter Value Units
RӨJC Thermal Resistance Junction to Case 12.5 ℃/W
Rev.A Apr.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WBD130
WBD 03D
300
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Value Units
Symbol Parameter Test Conditions
Min Typ Max
IEBO Emitter Cut-off Current VBE=9V - - 20 µA
VCEO(SUS) Collector-Emitter Sustaining Voltage IB=0,IC=10mA 400 - - V
IC=1.0A,IB=0.2A 0.5
VCE(sat) Collector -Emitter Saturation Voltage IC=2.0A,IB=0.5A - - 0.6 V
IC=4.0A,IB=1.0A 1.0
IC=500A,VCE=5V 10 40
hFE DC Current Gain -
IC=1mA,VCE=5V 9 -
Note:
Pulse Test :Pulse width 300, Duty cycle 2%
2/5
Steady, keep you advance
WBD130
WBD 03D
300
3/5
Steady, keep you advance
WBD130
WBD 03D
300
4/5
Steady, keep you advance
WBD130
WBD 03D
300
TO-252 Pack
-252 ckaage Dim
Dimeension
Unit:mm
5/5
Steady, keep you advance