INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor BU932P

DESCRIPTION
·High Voltage
·DARLINGTON

APPLICATIONS
·High ruggedness electronic ignitions.
·High voltage ignition coil driver

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 500 V

VCEO Collector-Emitter Voltage 450 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current 15 A

ICM Collector Current-peak 30 A

IBB Base Current 1 A

IBM Base Current-peak 5 A

Collector Power Dissipation

PC 105 W
@TC=25℃

Tj Junction Temperature 150 ℃

Tstg Storage Temperature Range -40~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor BU932P

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 450 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 150mA

B 1.8 V

V BE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 150mA

B 2.2 V

VCE= 500V;VBE= 0 1.0

ICES Collector Cutoff Current mA
VCE= 500V;VBE= 0;Tj= 125℃ 5.0

ICEO Collector Cutoff Current VCE= 450V;IB= 0 1.0 mA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 mA

hFE DC Current Gain IC= 5A ; VCE= 10V 300

VECF C-E Diode Forward Voltage IF= 10A 2.8 V

isc Website：www.iscsemi.cn