DPF 60 IM 400 HB

final

HiPerFRED² V RRM = 400 V

I FAV = 60 A
High Performance Fast Recovery Diode t rr = 60 ns
Low Loss and Soft Recovery
Single Diode
Part number

DPF 60 IM 400 HB
1
2
3

Backside: cathode

Features / Advantages: Applications: Package:

● Planar passivated chips ● Antiparallel diode for high frequency ● Housing: TO-247
● Very low leakage current switching devices ●rIndustry standard outline
● Very short recovery time ● Antisaturation diode ●rEpoxy meets UL 94V-0
● Improved thermal behaviour ● Snubber diode
● Very low Irm-values ● Free wheeling diode ●rRoHS compliant
● Very soft recovery behaviour ● Rectifiers in switch mode power
● Avalanche voltage rated for reliable operation supplies (SMPS)
● Soft reverse recovery for low EMI/RFI ● Uninterruptible power supplies (UPS)
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch

Ratings
Symbol Definition Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 25 °C 400 V
IR reverse current VR = 400 V TVJ = 25 °C 1 µA
VR = 400 V TVJ = 150 °C 0.5 mA
VF forward voltage IF = 60 A TVJ = 25 °C 1.27 V
I F = 120 A 1.53 V
IF = 60 A TVJ = 150 °C 1.09 V
I F = 120 A 1.39 V
I FAV average forward current rectangular d = 0.5 TC = 130°C 60 A
VF0 threshold voltage TVJ = 175°C 0.76 V
for power loss calculation only
rF slope resistance 4.9 mΩ
R thJC thermal resistance junction to case 0.55 K/W
T VJ virtual junction temperature -55 175 °C
Ptot total power dissipation TC = 25 °C 275 W
I FSM max. forward surge current t = 10 ms (50 Hz), sine TVJ = 45°C 600 A
I RM max. reverse recovery current TVJ = 25 °C 6 A
IF = 60 A; VR = 270 V TVJ = 125°C 12 A
t rr reverse recovery time -di F /dt = 200 A/µs TVJ = 25 °C 60 ns
TVJ = 125°C 105 ns
CJ junction capacitance VR = 200 V; f = 1 MHz TVJ = 25 °C 61 pF

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20100216a

© 2010 IXYS all rights reserved

 DPF 60 IM 400 HB
final
Ratings
Symbol Definition Conditions min. typ. max. Unit
1)
I RMS RMS current per pin 70 A
RthCH thermal resistance case to heatsink 0.25 K/W
Tstg storage temperature -55 150 °C
Weight 6 g
MD mounting torque 0.8 1.2 Nm
FC mounting force with clip 20 120 N
1)
IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.

Product Marking

Part number
D = Diode
P = HiPerFRED
F = ultra fast
Logo 60 = Current Rating [A]
Marking on product abcdef IM = Single Diode
400 = Reverse Voltage [V]
DateCode YYWW HB = TO-247AD (3)
Assembly Code XXXXXX

Ordering Part Name Marking on Product Delivering Mode Base Qty Code Key
Standard DPF 60 IM 400 HB DPF60IM400HB Tube 30 503573

Similar Part Package Voltage Class

DPG60IM400QB TO-3P (3) 400
DPG60I400HA TO-247AD (2) 400

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20100216a

© 2010 IXYS all rights reserved

 DPF 60 IM 400 HB
final
Outlines TO-247

Sym. Inches Millimeter

min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
ØP 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20100216a

© 2010 IXYS all rights reserved

 DPF 60 IM 400 HB
final
120 1.8 30

1.6
100 IF = 120 A 25 IF = 120 A
1.4
60 A 60 A
1.2 30 A 20 30 A
80
IF 1.0 IRM
Qrr 15
60
0.8
[A] TVJ = 150°C [A] 10
40 [µC] 0.6

0.4 TVJ = 125°C

TVJ = 125°C
20 VR = 270 V 5
25°C 0.2 VR = 270 V

0.0 0
0.0 0.4 0.8 1.2 1.6 2.0 0 200 400 600 0 200 400 600
VF [V] -diF /dt [A/µs] -diF /dt [A/µs]
Fig. 1 Forward current IF versus Fig. 2 Typ. reverse recovery charge Fig. 3 Typ. reverse recovery current
forward voltage VF Qrr versus -diF /dt IRM versus -diF /dt

1.6 120 1800 12

tfr TVJ = 125°C VFR
TVJ = 125°C
1.4 1600 VR = 270 V
110 VR = 270 V
IF = 60 A
1.2 1400 10
100
1.0 1200
trr tfr VFR
Kf 0.8 90 1000 8
[ns] IF = 120 A [ns] [V]
0.6 IRM 60 A 800
80 30 A
0.4 600 6
Qrr 70
0.2 400

0.0 60 200 4
0 40 80 120 160 0 200 400 600 0 200 400 600
TVJ [°C] -diF /dt [A/µs] -diF /dt [A/µs]

Fig. 4 Dynamic parameters Fig. 5 Typ. reverse recovery time Fig. 6 Typ. forward recovery voltage VFR
Qrr, IRM versus T VJ trr versus -diF /dt & forward recovery time tfr vs. diF /dt

80 0.6

70
0.5
60
IF = 120 A 0.4
50
Erec 60 A ZthJC
30 A 0.3
40
[µJ] [K/W]
30
0.2
20

TVJ = 125°C 0.1

10
VR = 270 V
0 0.0
0 200 400 600 10 0 10 1 10 2 10 3 10 4
-diF /dt [A/µs] t [ms]
Fig. 7 Typ. recovery energy Fig. 8 Transient thermal impedance junction to case
Erec versus -diF /dt

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20100216a

© 2010 IXYS all rights reserved