TIP41G, TIP41AG, TIP41BG,

TIP41CG (NPN),
TIP42G,TIP42AG, TIP42BG,
TIP42CG(PNP)

Complementary Silicon
Plastic Power Transistors www.onsemi.com

Designed for use in general purpose amplifier and switching 6 AMPERE

applications. COMPLEMENTARY SILICON
Features POWER TRANSISTORS
• Epoxy Meets UL 94 V−0 @ 0.125 in 40−60−80−100 VOLTS,
• These Devices are Pb−Free and are RoHS Compliant* 65 WATTS
MAXIMUM RATINGS PNP NPN
Rating Symbol Value Unit COLLECTOR COLLECTOR
2,4 2,4
Collector−Emitter Voltage VCEO Vdc
TIP41G, TIP42G 40
TIP41AG, TIP42AG 60
TIP41BG, TIP42BG 80 1 1
TIP41CG, TIP42CG 100 BASE BASE
Collector−Base Voltage VCB Vdc
TIP41G, TIP42G 40 3 3
TIP41AG, TIP42AG 60 EMITTER EMITTER
TIP41BG, TIP42BG 80
TIP41CG, TIP42CG 100
4
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC 6.0 Adc TO−220
CASE 221A
Collector Current − Peak ICM 10 Adc STYLE 1
Base Current IB 2.0 Adc
1
2
Total Power Dissipation PD 3
@ TC = 25°C 65 W
Derate above 25°C 0.52 W/°C
MARKING DIAGRAM
Total Power Dissipation PD
@ TA = 25°C 2.0 W
Derate above 25°C 0.016 W/°C
Unclamped Inductive Load Energy E 62.5 mJ
(Note 1) TIP4xxG
Operating and Storage Junction, TJ, Tstg – 65 to +150 °C AYWW
Temperature Range

ESD − Human Body Model HBM 3B V

ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the TIP4xx = Device Code
device. If any of these limits are exceeded, device functionality should not be xx = 1, 1A, 1B, 1C
assumed, damage may occur and reliability may be affected. 2, 2A, 2B, 2C
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W. A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques ORDERING INFORMATION
Reference Manual, SOLDERRM/D. See detailed ordering and shipping information on page 6 of
this data sheet.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

October, 2014 − Rev. 11 TIP41A/D
 TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.67 °C/W
Thermal Resistance, Junction−to−Ambient RqJA 57 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) Vdc
(IC = 30 mAdc, IB = 0)
TIP41G, TIP42G 40 −
TIP41AG, TIP42AG 60 −
TIP41BG, TIP42BG 80 −
TIP41CG, TIP42CG 100 −

Collector Cutoff Current ICEO mAdc

(VCE = 30 Vdc, IB = 0)
TIP41G, TIP41AG, TIP42G, TIP42AG − 0.7
(VCE = 60 Vdc, IB = 0)
TIP41BG, TIP41CG, TIP42BG, TIP42CG − 0.7
Collector Cutoff Current ICES mAdc
(VCE = 40 Vdc, VEB = 0)
TIP41G, TIP42G − 400
(VCE = 60 Vdc, VEB = 0)
TIP41AG, TIP42AG − 400
(VCE = 80 Vdc, VEB = 0)
TIP41BG, TIP42BG − 400
(VCE = 100 Vdc, VEB = 0)
TIP41CG, TIP42CG − 400
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE −
(IC = 0.3 Adc, VCE = 4.0 Vdc) 30 −
(IC = 3.0 Adc, VCE = 4.0 Vdc) 15 75
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 6.0 Adc, IB = 600 mAdc) − 1.5

Base−Emitter On Voltage VBE(on) Vdc

(IC = 6.0 Adc, VCE = 4.0 Vdc) − 2.0

DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) 3.0 −

Small−Signal Current Gain hfe −

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) 20 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

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TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
TA TC
4.0 80

PD, POWER DISSIPATION (WATTS)

3.0 60

TC
2.0 40

TA
1.0 20

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)

Figure 1. Power Derating

VCC
+30 V

25 ms RC
+11 V SCOPE
RB
0
-9.0 V
D1
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0% -4 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA

Figure 2. Switching Time Test Circuit

2.0

1.0 TJ = 25°C
VCC = 30 V
0.7
IC/IB = 10
0.5
t, TIME (s)

0.3
μ

tr
0.2

0.1
0.07 td @ VBE(off) ≈ 5.0 V
0.05
0.03
0.02
0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0
IC, COLLECTOR CURRENT (AMP)

Figure 3. Turn−On Time

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 TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05
RqJC = 1.92°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02 PULSE TRAIN SHOWN
0.03 t1
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

10 There are two limitations on the power handling ability of

0.5ms a transistor: average junction temperature and second
5.0
breakdown. Safe operating area curves indicate IC − VCE
IC, COLLECTOR CURRENT (AMP)

3.0 TJ = 150°C
1.0ms limits of the transistor that must be observed for reliable
2.0 CURVES APPLY BELOW RATED VCEO operation; i.e., the transistor must not be subjected to greater
SECONDARY BREAKDOWN LTD 5.0ms
dissipation than the curves indicate.
1.0 BONDING WIRE LTD The data of Figure 5 is based on TJ(pk) = 150°C; TC is
THERMAL LIMITATION @ TC = 25°C variable depending on conditions. Second breakdown pulse
0.5 (SINGLE PULSE) limits are valid for duty cycles to 10% provided TJ(pk)
0.3 TIP41, TIP42 ≤ 150°C. TJ(pk) may be calculated from the data in Figure 4.
0.2 TIP41A, TIP42A At high case temperatures, thermal limitations will reduce
TIP41B, TIP42B
TIP41C, TIP42C the power that can be handled to values less than the
0.1 limitations imposed by second breakdown.
5.0 10 20 40 60 80 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active−Region Safe Operating Area

5.0 300

3.0 TJ = 25°C TJ = 25°C

2.0 VCC = 30 V 200
IC/IB = 10
C, CAPACITANCE (pF)

ts
1.0 IB1 = IB2
Cib
t, TIME (s)

0.7
μ

0.5 100

0.3 70
0.2 tf Cob

50
0.1
0.07
0.05 30
0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn−Off Time Figure 7. Capacitance

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4
 TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
500 2.0

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

300 VCE = 2.0 V TJ = 25°C
200 TJ = 150°C 1.6
hFE, DC CURRENT GAIN

100
25°C 1.2 IC = 1.0 A 2.5 A 5.0 A
70
50

30 0.8
20 -55°C

0.4
10
7.0
5.0 0
0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 4.0 6.0 10 20 30 50 100 200 300 500 1000
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

2.0 +2.5

θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C +2.0 *APPLIES FOR IC/IB ≤ hFE/4
1.6 +1.5
V, VOLTAGE (VOLTS)

+1.0
1.2 +0.5 +25°C to +150°C
*qVC FOR VCE(sat)
0
VBE(sat) @ IC/IB = 10 -55°C to +25°C
0.8 -0.5
+25°C to +150°C
VBE @ VCE = 4.0 V -1.0
0.4 -1.5 qVB FOR VBE
VCE(sat) @ IC/IB = 10 -2.0 -55°C to +25°C
0 -2.5
0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 3.0 4.0 6.0 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages Figure 11. Temperature Coefficients

R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

103 10M
VCE = 30 V VCE = 30 V
102
IC, COLLECTOR CURRENT (A)

1.0M IC = 10 x ICES
μ

TJ = 150°C
101 100°C IC ≈ ICES
25°C 100k
100

10k
10-1 IC = ICES IC = 2 x ICES

10-2 REVERSE FORWARD 1.0k (TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
10-3 0.1k
-0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7 20 40 60 80 100 120 140 160
VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance

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5
 TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)

ORDERING INFORMATION
Device Package Shipping
TIP41G TO−220 50 Units / Rail
(Pb−Free)
TIP41AG TO−220 50 Units / Rail
(Pb−Free)
TIP41BG TO−220 50 Units / Rail
(Pb−Free)
TIP41CG TO−220 50 Units / Rail
(Pb−Free)
TIP42G TO−220 50 Units / Rail
(Pb−Free)
TIP42AG TO−220 50 Units / Rail
(Pb−Free)
TIP42BG TO−220 50 Units / Rail
(Pb−Free)
TIP42CG TO−220 50 Units / Rail
(Pb−Free)

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 TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T S
ALLOWED.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V
Z
0.045
---
---
0.080
1.15
---
---
2.04
N STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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