2N6487, 2N6488, (NPN)

2N6490, 2N6491 (PNP)

Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications. http://onsemi.com

Features
15 AMPERE
• DC Current Gain Specified to 15 Amperes −
hFE = 20 −150 @ IC = 5.0 Adc COMPLEMENTARY SILICON
= 5.0 (Min) @ IC = 15 Adc POWER TRANSISTORS
• Collector−Emitter Sustaining Voltage − 60−80 VOLTS, 75 WATTS
VCEO(sus) = 60 Vdc (Min) − 2N6487, 2N6490
= 80 Vdc (Min) − 2N6488, 2N6491
• High Current Gain − Bandwidth Product MARKING
fT = 5.0 MHz (Min) @ IC = 1.0 Adc DIAGRAM
• TO−220AB Compact Package
• Pb−Free Packages are Available*
4
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit TO−220AB 2N64xxG
CASE 221A AYWW
Collector−Emitter Voltage VCEO Vdc STYLE 1
2N6487, 2N6490 60
2N6488, 2N6491 80
1
Collector−Base Voltage VCB Vdc 2
3
2N6487, 2N6490 70
2N6488, 2N6491 90
2N64xx = Specific Device Code
Emitter−Base Voltage VEB 5.0 Vdc xx = See Table on Page 5
G = Pb−Free Package
Collector Current − Continuous IC 15 Adc A = Assembly Location
Base Current IB 5.0 Adc Y = Year
WW = Work Week
Total Power Dissipation @ TC = 25_C PD 75 W
Derate above 25_C 0.6 W/°C

Total Power Dissipation @ TA = 25_C PD 1.8 W

Derate above 25_C 0.014 W/°C ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
Operating and Storage Junction TJ, Tstg −65 to +150 °C the package dimensions section on page 5 of this data sheet.
Temperature Range

THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.67 _C/W
Thermal Resistance, Junction−to−Ambient RqJA 70 _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

October, 2011 − Rev. 14 2N6487/D
 2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

TA TC
4.0 80

PD, POWER DISSIPATION (WATTS)

3.0 60
TC

2.0 40
TA

1.0 20

0 0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3) VCEO(sus) Vdc
(IC = 200 mAdc, IB = 0) 2N6487, 2N6490 60 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
2N6488, 2N6491 80 −

ÎÎÎ
Collector−Emitter Sustaining Voltage (Note) VCEX Vdc
(IC = 200 mAdc, VBE = 1.5 Vdc) 2N6487, 2N6490

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
70 −
2N6488, 2N6491 90 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 30 Vdc, IB = 0) 2N6487, 2N6490 − 1.0
(VCE = 40 Vdc, IB = 0) 2N6488, 2N6491 − 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEX mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 65 Vdc, VEB(off) = 1.5 Vdc) 2N6487, 2N6490 − 500

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 85 Vdc, VEB(off) = 1.5 Vdc) 2N6488, 2N6491 − 500
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6487, 2N6490 − 5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6488, 2N6491 − 5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE −
(IC = 5.0 Adc, VCE = 4.0 Vdc) 20 150

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 15 Adc, VCE = 4.0 Vdc) 5.0 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 Adc, IB = 0.5 Adc) − 1.3
(IC = 15 Adc, IB = 5.0 Adc) − 3.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage VBE(on) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 Adc, VCE = 4.0 Vdc) − 1.3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 15 Adc, VCE = 4.0 Vdc) − 3.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product (Note 4) fT 5.0 − MHz
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
hfe 25 − −

4. fT = |hfe| • ftest

http://onsemi.com
2
 2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

VCC
+ 30 V

25 ms RC
+ 10 V
SCOPE
0 RB

- 10 V 51 D1
tr, tf v 10 ns
DUTY CYCLE = 1.0% -4V
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
FOR PNP, REVERSE ALL POLARITIES.
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA

Figure 2. Switching Time Test Circuit

1000

500
tr

200
t, TIME (ns)

100

50 NPN td @ VBE(off) [ 5.0 V

PNP
TC = 25°C
20
VCC = 30 V
IC/IB = 10
10
0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP)

Figure 3. Turn−On Time

1.0
0.7
r(t), TRANSIENT THERMAL RESISTANCE

D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)

0.1
0.1 ZqJC (t) = r(t) RqJC P(pk)
0.07 0.05
RqJC = 1.67°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN t1
0.03
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
Figure 4. Thermal Response

http://onsemi.com
3
 2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

20 There are two limitations on the power handling ability of

10 100 ms a transistors average junction temperature and second
IC, COLLECTOR CURRENT (AMP)

breakdown. Safe operating area curves indicate IC − VCE

5.0 500 ms limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
2.0 1.0 ms dissipation than the curves indicate.
TJ = 150°C
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
1.0 SECOND BREAKDOWN LIMITED 5.0 ms
variable depending on conditions. Second breakdown pulse
BONDING WIRE LIMITED
0.5 THERMALLY LIMITED @ TC = 25°C
limits are valid for duty cycles to 10% provided TJ(pk)
CURVES APPLY BELOW RATED VCEO
v 150_C. TJ(pk) may be calculated from the data in
0.2 2N6487, 2N6490 dc
Figure 4. At high case temperatures, thermal limitations will
2N6488, 2N6491 reduce the power that can be handled to values less than the
0.1
2.0 4.0 10 20 40 60 80
limitations imposed by second breakdown
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active−Region Safe Operating Area

5000 1000

700
ts
C, CAPACITANCE (pF) Cob
1000
300 Cib
t, TIME (ns)

500 tf Cob
200
NPN
200 PNP VCC = 30 V
100 NPN
IC/IB = 10
100 IB1 = IB2 PNP
70
TJ = 25°C TJ = 25°C
50 50
0.2 0.5 1.0 2.0 5.0 10 20 0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn−Off Time Figure 7. Capacitances

NPN PNP
2N6487, 2N6488 2N6490, 2N6491
500 500
TJ = 150°C
200 25°C 200 TJ = 150°C
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

25°C
100 100
-55°C -55°C

50 50

20 20
VCE = 2.0 V
10 10 VCE = 2.0 V

5.0 5.0
0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain

http://onsemi.com
4
 2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

2.0 2.0
1.8 TJ = 25°C 1.8 TJ = 25°C

1.6 1.6
1.4 1.4
1.2 1.2
1.0 IC = 1.0 A 1.0 IC = 1.0 A 4.0 A 8.0 A

0.8 0.8
4.0 A 8.0 A
0.6 0.6
0.4 0.4
0.2 0.2
0 0
5.0 10 20 50 100 200 500 1000 2000 5000 5.0 10 20 50 100 200 500 1000 2000 5000
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region

2.8 2.8

2.4 TJ = 25°C 2.4 TJ = 25°C

V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)
2.0 2.0

1.6 1.6

1.2 1.2
VBE(sat) = IC/IB = 10 VBE(sat) @ IC/IB = 10
0.8 0.8
VBE @ VCE = 2.0 V VBE @ VCE = 2.0 V
0.4 0.4
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10
0 0
0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

ORDERING INFORMATION
Device Device Marking Package Shipping
2N6487 TO−220AB
2N6487G 2N6487 TO−220AB 50 Units / Rail
(Pb−Free)

2N6488 TO−220AB
2N6488G 2N6488 TO−220AB 50 Units / Rail
(Pb−Free)

2N6490 TO−220AB
2N6490G 2N6490 TO−220AB 50 Units / Rail
(Pb−Free)

2N6491 TO−220AB
2N6491G 2N6491 TO−220AB 50 Units / Rail
(Pb−Free)

http://onsemi.com
5
 2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T S
ALLOWED.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.036 0.64 0.91
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.025 0.36 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V
Z
0.045
---
---
0.080
1.15
---
---
2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative

http://onsemi.com 2N6487/D
6