Electronics and Communication Engineering Electronics Devices and Circuits Lab

EXPT NO: 1.

FORWARD & REVERSE BIAS CHARACTERSTICS OF PN JUNCTION DIODE

AIM: -
1. To study the characteristics of PN junction diode under
a) Forward bias. b) Reverse bias.
2. To find the cut-in voltage (Knee voltages) static & dynamic resistance in forward &
reverse direction.

COMPONENTS & EQUIPMENTS REQUIRED: -

S.No Device Range/Rating Qty

1. Regulated power supply voltage 0-30V 1
2. Voltmeter 0-1V or 0-20V 1
3. Ammeter 0-10mA,200mA 1
4. Connecting wires & bread board
5 Diode In4007,OA79
6 Resistors 1k,10k

THEORY:

The V-I characteristics of the diode are curve between voltage across the diode and
current through the diode. When external voltage is zero, circuit is open and the potential barrier
does not allow the current to flow. Therefore, the circuit current is zero. When P-type (Anode is
connected to +ve terminal and n- type (cathode) is connected to –ve terminal of the supply
voltage, is known as forward bias. The potential barrier is reduced when diode is in the forward
biased condition. At some forward voltage, the potential barrier altogether eliminated and current
starts flowing through the diode and also in the circuit. The diode is said to be in ON state. The
current increases with increasing forward voltage. When N-type (cathode) is connected to +ve
terminal and P-type (Anode) is connected –ve terminal of the supply voltage is known as reverse

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bias and the potential barrier across the junction increases. Therefore, the junction resistance
becomes very high and a very small current (reverse saturation current) flows in the circuit. The
diode is said to be in OFF state. The reverse bias current is due to minority charge carriers. The
p-n junction diode conducts only in one direction.

CIRCUIT DIAGRAM:

FORWARD BIAS:-

REVERSE BIAS:-

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MODEL WAVEFORM:-

PROCEDURE: -

Forward bias characteristics

1. Connect the circuit diagram as shown in figure for Forward bias using silicon diode.
2. Now vary RPS supply voltage Vs in steps from 0V onwards (0.1V,0.2V……1V) note
down the forward current (If) through the diode for different Forward voltages (Vf)
across the diode without exceeding the rated value (If Max=20mA)
3. Tabulate the results in the tabular form.
4. Plot the graph between Vf & If.
5. Repeat the above steps 4 steps by using Germanium diode.

Reverse bias characteristics

1. Connect the circuit diagram as shown in figure for Reverse bias using silicon diode.
2. Now vary RPS supply voltage Vs in steps from 0V onwards (1V,2V……10V) note down
the forward current (Ir) through the diode for different Reverse voltages (Vr) across the
diode without exceeding the rated value (Vr Max=15V)
3. Tabulate the results in the tabular form.

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4. Plot the graph between Vr & Ir.
5. Repeat the above steps 4 steps by using Germanium diode.

PRECAUTIONS:
1. Avoid loose connections use proper voltmeter & ammeters

TABULAR COLUMN:

SL. No APPLIED VOLTAGE VOLTAGE ACROSS CURRENT

(V) DIODE (V) THROUGH
DIODE(mA)
0 0
1 0.1
2 0.2
3 0.3
4 0.4
5 0.5
6 0.6
7 0.7
8 0.8
9 0.9
10 1
11 2
12 3
13 4
14 5
15 6
16 7
17 8
18 9
19 10
20 11

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