AP9930GM

Pb Free Plating Product

Advanced Power 2N AND 2P-CHANNEL ENHANCEMENT

Electronics Corp. MODE POWER MOSFET

▼ Simple Drive Requirement P2G N-CH BVDSS 30V

N2D/P2D
▼ Low On-resistance P1S/P2S RDS(ON) 33mΩ
P1G
▼ Full Bridge Application on N2G ID 5.5A
N1S/N2S
LCD Monitor Inverter N1D/P1D
P-CH BVDSS -30V
SO-8 N1G
RDS(ON) 55mΩ
Description ID -4.1A
The Advanced Power MOSFETs from APEC provide the P1S P2S
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost- P1G P2G
effectiveness.

P1N1D P2N2D
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N1G N2G

N1S N2S
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 30 -30 V
VGS Gate-Source Voltage ±25 ±25 V
3
ID@TA=25℃ Continuous Drain Current 5.5 -4.1 A
3
ID@TA=70℃ Continuous Drain Current 4.4 -3.3 A
1
IDM Pulsed Drain Current 20 -20 A
PD@TA=25℃ Total Power Dissipation 1.38 W
Linear Derating Factor 0.01 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Thermal Resistance Junction-ambient Max. 90 ℃/W

Data and specifications subject to change without notice 200923043

AP9930GM
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.04 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A - - 33 mΩ
VGS=4.5V, ID=3A - - 60 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=5A - 5.2 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±25V - - ±100 nA
2
Qg Total Gate Charge ID=5A - 7 10 nC
Qgs Gate-Source Charge VDS=15V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC
2
td(on) Turn-on Delay Time VDS=15V - 7 - ns
tr Rise Time ID=1A - 10 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=10V - 18 - ns
tf Fall Time RD=15Ω - 8 - ns
Ciss Input Capacitance VGS=0V - 600 960 pF
Coss Output Capacitance VDS=25V - 229.8 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 94 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.2A, VGS=0V - - 1.2 V
trr Reverse Recovery Time IS=1.7A, VGS=0V - 21 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC
 AP9930GM

P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA - -0.04 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-4A - - 55 mΩ
VGS=-4.5V, ID=-2A - - 100 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-5A - 4.8 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=-30V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=±25V - - ±100 nA
2
Qg Total Gate Charge ID=-5A - 7 11 nC
Qgs Gate-Source Charge VDS=-15V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 4 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 11 - ns
tr Rise Time ID=-1A - 8 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=-10V - 20 - ns
tf Fall Time RD=15Ω - 18 - ns
Ciss Input Capacitance VGS=0V - 490 790 pF
Coss Output Capacitance VDS=-25V - 190 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-1.2A, VGS=0V - - -1.2 V
trr Reverse Recovery Time IS=-1.7A, VGS=0V - 21 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 15 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 186 ℃/W when mounted on Min. copper pad.
AP9930GM
N-Channel
25 20

T A =25 o C 10V T A =150 o C 10V

20 8.0V 8.0V
6.0V 15
6.0V
ID , Drain Current (A)

4.0V

ID , Drain Current (A)

4.0V
15

10

10

V G =3.0V
V G =3.0V 5
5

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

45 1.6

I D =3A
I D =5A
T A =25 ℃ 1.4

40
V G =10V
Normalized RDS(ON)
RDS(ON) (mΩ )

1.2

35

1.0

30

0.8

25 0.6
2 4 6 8 10 -50 0 50 100 150

o
V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10.00 2

1.8

1.00
T j =150 o C T j =25 o C
1.6
VGS(th) (V)
IS(A)

1.4

0.10

1.2

0.01 1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) o

T j ,Junction Temperature ( C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature
 AP9930GM
N-Channel
f=1.0MHz
12 1000

I D =5A C iss
VGS , Gate to Source Voltage (V)

10
V DS =15V

8 C oss

C (pF)
6 100 C rss

0 10
0 4 8 12 16
1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthja)

0.2
10

100us 0.1
0.1
ID (A)

0.05
1ms
1 0.02 P DM
t
10ms 0.01
T
Single Pulse
0.01 Duty factor = t/T
100ms Peak Tj = PDM x Rthja + Ta
℃ /W
T A =25 o C
0.1 Rthja = 186℃
1s
Single Pulse
DC

0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG

4.5V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
AP9930GM
P-Channel
25 20

o
T A =25 C o -10V
-10V T A =150 C
20
-8.0V -8.0V
15
-6.0V
-ID , Drain Current (A)

-6.0V

-ID , Drain Current (A)

15

10

-4.0V -4.0V
10

5
5
V G =-3.0V
V G =-3.0V

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

95 1.6

I D =-2A 1.4 I D = -4 A
T A =25 ℃ V G = -10 V
Normalized R DS(ON)
RDS(ON) (mΩ )

75

1.2

55

0.8

35 0.6
2 4 6 8 10 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10.00 2.5

o
1.00 T j =150 C T j =25 o C 2
-VGS(th) (V)
-IS(A)

0.10 1.5

0.01 1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 -50 0 50 100 150

-V SD ,Source-to-Drain Voltage (V) T j , Junction Temperature ( C)

o

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature
 AP9930GM
P-Channel
f=1.0MHz
16 1000

I D =-5A
-VGS , Gate to Source Voltage (V)

C iss
V DS =-15V
12

C oss

C (pF)
C rss
8 100

0 10
0 4 8 12 16 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthja)

0.2
10
100us
0.1
0.1

1ms 0.05
ID (A)

1 0.02 PDM
10ms t
0.01
T
Single Pulse
Duty factor = t/T
100ms 0.01
Peak Tj = PDM x Rthja + Ta
0.1 1s ℃ /W
Rthja = 186℃
T A =25 o C
Single Pulse DC

0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG

-4.5V
QGS QGD
10%
VGS

td(on) tr td(off) tf Q
Charge

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform