FQPF12N60C — N-Channel QFET® MOSFET

November 2013

FQPF12N60C
N-Channel QFET® MOSFET
600 V, 12 A, 650 mΩ
Description Features
These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V,
transistors are produced using Fairchild’s proprietary, planar ID = 6 A
stripe, DMOS technology. This advanced technology has • Low Gate Charge (Typ. 48 nC)
been especially tailored to minimize on-state resistance, • Low Crss (Typ. 21 pF)
provide superior switching performance, and withstand high
• 100% Avalanche Tested
energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched
mode power supplies, active power factor correction,
electronic lamp ballast based on half bridge topology.

G
G
D TO-220F
S

Absolute Maximum Ratings T C

o
= 25 C unless otherwise noted.

Symbol Parameter FQPF12N60C / FQPF12N60CT Unit

VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C) 12* A
- Continuous (TC = 100°C) 7.4* A
IDM Drain Current - Pulsed (Note 1)
48* A

VGSS Gate-Source voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 870 mJ
IAR Avalanche Current (Note 1) 12 A
EAR Repetitive Avalanche Energy (Note 1) 22.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 51 W
- Derate above 25°C 0.41 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,
300 °C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol Parameter FQPF12N60C / FQPF12N60CT Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 2.43 °C/W

RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W

©2003 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQPF12N60C Rev C0
 FQPF12N60C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQPF12N60C FQPF12N60C TO-220F Tube N/A N/A 50 units
FQPF12N60CT FQPF12N60CT TO-220F Tube N/A N/A 50 units

Electrical Characteristics TC = 25°C unless otherwise noted.

Symbol Parameter Conditions Min Typ Max Unit

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA, TJ = 25°C 600 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
/ ∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA
VDS = 480 V, TC = 125° -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 6 A -- 0.53 0.65 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 6 A -- 13 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1760 2290 pF
f = 1.0 MHz
Coss Output Capacitance -- 182 235 pF
Crss Reverse Transfer Capacitance -- 21 28 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300 V, ID = 12 A -- 30 70 ns
RG = 25 Ω
tr Turn-On Rise Time -- 85 180 ns
td(off) Turn-Off Delay Time -- 140 280 ns
(Note 4)
tf Turn-Off Fall Time -- 90 190 ns
Qg Total Gate Charge VDS = 400 V, ID = 12 A -- 48 63 nC
VGS = 10 V
Qgs Gate-Source Charge -- 8.5 -- nC
Qgd Gate-Drain Charge (Note 4) -- 21 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- 12 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 12 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 12 A -- 420 -- ns
dIF/dt = 100 A/µs
Qrr Reverse Recovery Charge -- 4.9 -- µC

NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 11 mH, IAS = 12 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3.ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.

©2003 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FQPF12N60C Rev C0
 FQPF12N60C — N-Channel QFET® MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V 1
5.5 V 10
o
5.0 V 150 C

ID, Drain Current [A]

ID, Drain Current [A]

1
10 Bottom : 4.5 V

o
-55 C
o
25 C
0
10

※ Notes :
10
0 1. 250µs Pulse Test ※ Notes :
2. TC = 25℃ 1. VDS = 40V
2. 250µs Pulse Test
-1
10
0 1 2 4 6 8 10
10 10
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue

1.5
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

1
10
RDS(ON) [Ω ],

VGS = 10V

1.0

0
10

150℃
VGS = 20V ※ Notes :
0.5
25℃ 1. VGS = 0V
2. 250µs Pulse Test
※ Note : TJ = 25℃
-1
10
0 5 10 15 20 25 30 35 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

3500 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd VDS = 120V
3000
10
VDS = 300V
VGS, Gate-Source Voltage [V]

2500 VDS = 480V

Ciss
8
Capacitance [pF]

2000
Coss
6
1500

※ Notes ; 4
1. VGS = 0 V
1000
2. f = 1 MHz
Crss
2
500
※ Note : ID = 12A

0 0
10
-1
10
0
10
1 0 10 20 30 40 50

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

©2003 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FQPF12N60C Rev C0
 FQPF12N60C — N-Channel QFET® MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 µA 0.5 1. VGS = 10 V
2. ID = 6.0 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C]
o TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

14
Operation in This Area
2 is Limited by R DS(on)
10 12
10 µs
100 µs 10
ID, Drain Current [A]
ID, Drain Current [A]

10
1 1 ms
10 ms
8
100 ms
DC
0
10 6

4
-1 ※ Notes :
10 o
1. TC = 25 C
2. TJ = 150 C
o 2
3. Single Pulse

10
-2 0
10
0 1
10
2
10
3
10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 11. Transient Thermal Response Curve

(t), Thermal Response [oC/W]

0
D = 0 .5
10

0 .2 ※ N o te s :
1 . Z θ J C (t) = 2 .4 3 ℃ /W M a x .
0 .1 2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .0 5
-1
10
0 .0 2
0 .0 1 PDM
θJC

t1
Z

s in g le p u ls e
t2
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

©2003 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FQPF12N60C Rev C0
 FQPF12N60C — N-Channel QFET® MOSFET
VGS
Same
Same Type
50KΩ
50K Ω
as DU
DUTT Qg
12V 200nF
200n F
300nF
300n F

VDS
VGS Qgs Qgd

DUT
DU T
IG = const.

Charrge
Cha

Figure 12. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
10%
VGS
VGS DUT
DUT
td(on tr td(o
d( on)) d( of f) tf
t on t of
offf

Figure 13. Resistive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSDSSS - VDD

BVDS
DSS
S
ID
IAS
RG
VDD ID (t)

VGS DUT VDD VDS (t)

tp
tp Ti
Tim
me

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

©2003 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FQPF12N60C Rev C0
 FQPF12N60C — N-Channel QFET® MOSFET
DUT +

VDS

I SD
L

Driver
Driv er
RG
Same Type
Same
as DUT VDD

VGS • dv/dt contntrrolled by RG

• ISD con
onttrol
ollled by pu
pullse pe
perriod

Gate Pul ulsse W idth

VGS D = --------------------------
Gate
Ga te Pu
Pullse Pe
Perriod 10V
10 V
( Driv
Driver
er )

IFM , Body
Body Di
Diod
odee Forward Curr
rren
entt
I SD
( DUT ) di/d
di/dtt

IRM

Body
Bo dy Diod
odee Reverse Curren
entt
VDS
( DUT ) Body
Bo dy Di
Diod
odee Recov
coveery dv
dv/d
/dtt

VSD VDD

Body Diode
Body
For
Forw
ward Vol
olttag
agee Dr
Drop
op

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

©2003 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FQPF12N60C Rev C0
 FQPF12N60C — N-Channel QFET® MOSFET
Mechanical Dimensions

Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

©2003 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FQPF12N60C Rev C0
 FQPF12N60C — N-Channel QFET® MOSFET
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Rev. I66

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FQPF12N60C Rev C0
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