FCB20N60 — N-Channel SuperFET® MOSFET

October 2013

FCB20N60
N-Channel SuperFET® MOSFET
600 V, 20 A, 190 mΩ
Features Description
• 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
• Typ. RDS(on) = 150 m
utilizing charge balance technology for outstanding low on-
• Ultra Low Gate Charge (Typ. Qg = 75 nC) resistance and lower gate charge performance. This technology
• Low Effective Output Capacitance (Typ. Coss.eff = 165 pF) is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
• 100% Avalanche Tested
sequently, SuperFET MOSFET is very suitable for the switching
• RoHS Compliant power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
Application
• Lighting • AC-DC Power Supply
• Solar Inverter

G G
S D2-PAK

S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol Parameter FCB20N60TM Unit
VDSS Drain to Source Voltage 600 V
- Continuous (TC = 25oC) 20
ID Drain Current A
- Continuous (TC = 100oC) 12.5
IDM Drain Current - Pulsed (Note 1) 60.0 A
VGSS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 690 mJ
IAR Avalanche Current (Note 1) 20 A
EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
(TC = 25oC) 208 W
PD Power Dissipation
- Derate above 25oC 1.67 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum Lead Temperature for Soldering Purpose, o
TL 300 C
1/8” from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter FCB20N60TM Unit
RJC Thermal Resistance, Junction to Case, Max 0.6
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 oC/W
RJA 2
Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. 40

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCB20N60 Rev. C1
 FCB20N60 — N-Channel SuperFET® MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCB20N60 FCB20N60TM D2-PAK 330mm 24m 800

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
VGS = 0 V,ID = 250 A, TC = 25oC 600 - - V
BVDSS Drain to Source Breakdown Voltage
VGS = 0 V,ID = 250 A, TC = 150oC - 650 - V
BVDSS Breakdown Voltage Temperature
ID = 250 A, Referenced to 25oC - 0.6 - V/oC
/ TJ Coefficient
BVDS Drain-Source Avalanche Breakdown
VGS = 0 V, ID = 20 A - 700 - V
Voltage
VDS = 600 V, VGS = 0 V - - 1
IDSS Zero Gate Voltage Drain Current A
VDS = 480 V, VGS = 0 V, TC = 125oC - - 10
IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 A 3.0 - 5.0 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A - 0.15 0.19 
gFS Forward Transconductance VDS = 40 V, ID = 10 A - 17 - S

Dynamic Characteristics
Ciss Input Capacitance - 2370 3080 pF
VDS = 25 V, VGS = 0 V
Coss Output Capacitance - 1280 1665 pF
f = 1.0 MHz
Crss Reverse Transfer Capacitance - 95 - pF
Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz - 65 85 pF
Cosseff. Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 165 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 62 135 ns
tr Turn-On Rise Time VDD = 300 V, ID = 20 A - 140 290 ns
td(off) Turn-Off Delay Time RG = 25  - 230 470 ns
tf Turn-Off Fall Time (Note 4) - 65 140 ns
Qg(tot) Total Gate Charge at 10V VDS = 480 V, ID = 20 A, - 75 98 nC
Qgs Gate to Source Gate Charge VGS = 10 V - 13.5 18 nC
Qgd Gate to Drain “Miller” Charge (Note 4) - 36 - nC

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 20 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 20 A - - 1.4 V
trr Reverse Recovery Time VGS = 0 V, ISD = 20 A - 530 - ns
Qrr Reverse Recovery Charge dIF/dt = 100 A/s - 10.5 - C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 10 A, VDD = 50 V, RG = 25 , Starting TJ = 25C
3. ISD  20 A, di/dt  200 A/s, VDD  BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics

©2005 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FCB20N60 Rev. C1
 FCB20N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

2
10
VGS 2
10
Top : 15.0 V
10.0 V
8.0 V
7.0 V

ID , Drain Current [A]

6.5 V
ID, Drain Current [A]

6.0 V
10
1
Bottom : 5.5 V 1
150C
10

25C
-55C
0 0
10 10
Notes : Note
1. 250s Pulse Test 1. VDS = 40V
2. TC = 25C 2. 250s Pulse Test

-1 0 1 2 4 6 8 10
10 10 10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
2
0.4 10
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance

0.3
VGS = 10V
RDS(ON) [O ],

1
10

0.2

VGS = 20V
150C 25C
0
0.1 10
Notes :
1. VGS = 0V
Note : TJ = 25C 2. 250s Pulse Test

0.0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10000 12
Ciss = Cgs + Cgd (Cds = shorted)
9000 Coss = Cds + Cgd VDS = 100V
Crss = Cgd 10 VDS = 250V
8000
VGS, Gate-Source Voltage [V]

VDS = 400V
7000
8
Capacitance [pF]

6000 Coss

5000 6
Notes :
1. VGS = 0 V
4000 Ciss
2. f = 1 MHz
4
3000

2000
Crss 2
1000 Note : ID = 20A

0 0
-1 0 1
10 10 10 0 10 20 30 40 50 60 70 80

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

©2005 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FCB20N60 Rev. C1
 FCB20N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.5

RDS(ON), (Normalized)
1.1
BVDSS, (Normalized)

2.0

1.0 1.5

1.0
Notes :
0.9 1. VGS = 0 V
Notes :
2. ID = 250A 1. VGS = 10 V
0.5
2. ID = 20 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
TJ, Junction Temperature [C] TJ, Junction Temperature [C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

25
Operation in This Area
10
2 is Limited by R DS(on)

20
100 us
ID, Drain Current [A]

ID, Drain Current [A]

10
1 1 ms
10 ms 15
DC
0
10
10

Notes :
-1 1. TC = 25C
10
2. TJ = 150C 5
3. Single Pulse

-2
10 0
0 1 2 3
10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [C]

Figure 11. Transient Thermal Response Curve

0
10
Response[oC/W]

D = 0 .5
ThermalResponse

0 .2 N o te s :
-1 1 . Z  J C (t) = 0 .6  C /W M a x.
10
2 . D u ty F a c to r, D = t 1 /t 2
0 .1
3 . T J M - T C = P D M * Z  J C (t)
(t),Thermal

0 .0 5
PDM
0 .0 2
t1
Z (t),

0 .0 1
JC

t2
ZJC

-2
10 s in g le p u ls e

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

©2005 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FCB20N60 Rev. C1
 FCB20N60 — N-Channel SuperFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
IG = const.
3mA

Charge

Figure 13. Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

V
10V
GS
GS DUT VDD VDS (t)
tp
tp Time

©2005 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FCB20N60 Rev. C1
 FCB20N60 — N-Channel SuperFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

©2005 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FCB20N60 Rev. C1
 FCB20N60 — N-Channel SuperFET® MOSFET
Mechanical Dimensions

TO-263 2L (D2PAK)

Figure 16. 2LD,TO263, Surface Mount

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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
Dimension in Millimeters

©2005 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FCB20N60 Rev. C1
 FCB20N60 — N-Channel SuperFET® MOSFET
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Datasheet Identification
Advance Information
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Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

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Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I66

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FCB20N60 Rev. C1
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