FCH20N60 / FCA20N60 600V N-Channel MOSFET

SuperFET TM

FCH20N60 / FCA20N60
600V N-Channel MOSFET
Features Description
• 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
• Typ. RDS(on) = 0.15Ω
balance mechanism for outstanding low on-resistance and
• Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance.
• Low effective output capacitance (typ. Coss.eff = 165pF) This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
• 100% avalanche tested
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.

D
!

"

! "
"
G! "

TO-247 TO-3P !
G D
S G DS S

Absolute Maximum Ratings

Symbol Parameter FCH20N60 FCA20N60 Unit
VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C) 20 A
- Continuous (TC = 100°C) 12.5 A
IDM Drain Current - Pulsed (Note 1)
60 A

VGSS Gate-Source voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 690 mJ
IAR Avalanche Current (Note 1) 20 A
EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 208 W
- Derate above 25°C 1.67 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,
300 °C
1/8” from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RθJC Thermal Resistance, Junction-to-Case -- 0.6 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.24 --
RθJA Thermal Resistance, Junction-to-Ambient -- 41.7 °C/W

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCH20N60 / FCA20N60 Rev. A
 FCH20N60 / FCA20N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCH20N60 FCH20N60 TO-247 - - 30
FCA20N60 FCA20N60 TO-3P - - 30

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V
VGS = 0V, ID = 250µA, TJ = 150°C -- 650 -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250µA, Referenced to 25°C -- 0.6 -- V/°C
/ ∆TJ Coefficient
BVDS Drain-Source Avalanche Breakdown
VGS = 0V, ID = 20A -- 700 -- V
Voltage
IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V -- -- 1 µA
VDS = 480V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10V, ID = 10A -- 0.15 0.19 Ω
On-Resistance
gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) -- 17 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, -- 2370 3080 pF
f = 1.0MHz
Coss Output Capacitance -- 1280 1665 pF
Crss Reverse Transfer Capacitance -- 95 -- pF
Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF
Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300V, ID = 20A -- 62 135 ns
RG = 25Ω
tr Turn-On Rise Time -- 140 290 ns
td(off) Turn-Off Delay Time -- 230 470 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 65 140 ns
Qg Total Gate Charge VDS = 480V, ID = 20A -- 75 98 nC
Qgs Gate-Source Charge VGS = 10V -- 13.5 18 nC
Qgd Gate-Drain Charge (Note 4, 5) -- 36 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 20A -- 530 -- ns
Qrr Reverse Recovery Charge dIF/dt =100A/µs (Note 4)
-- 10.5 -- µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

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FCH20N60 / FCA20N60 Rev. A
 FCH20N60 / FCA20N60 600V N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

2
10
VGS 2
Top : 15.0 V 10
10.0 V
8.0 V
7.0 V

ID , Drain Current [A]

6.5 V
ID, Drain Current [A]

6.0 V
10
1
Bottom : 5.5 V
1
150°C
10

25°C
-55°C
0 0
10 10
Notes : Note
1. 250µs Pulse Test 1. VDS = 40V
2. TC = 25°C 2. 250µs Pulse Test

-1 0 1 2 4 6 8 10
10 10 10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
2
0.4 10
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance

0.3
VGS = 10V
RDS(ON) [O ],

1
10

0.2

VGS = 20V
150°C 25°C
0
0.1 10
Notes :
1. VGS = 0V
Note : TJ = 25°C 2. 250µs Pulse Test

0.0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10000 12
Ciss = Cgs + Cgd (Cds = shorted)
9000 Coss = Cds + Cgd VDS = 100V
Crss = Cgd 10 VDS = 250V
8000
VGS, Gate-Source Voltage [V]

VDS = 400V
7000
8
Capacitance [pF]

6000 Coss

5000 6
Notes :
1. VGS = 0 V
4000 Ciss
2. f = 1 MHz
4
3000

2000
Crss 2
1000 Note : ID = 20A

0 0
-1 0 1
10 10 10 0 10 20 30 40 50 60 70 80

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

3 www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A
 FCH20N60 / FCA20N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.5

RDS(ON), (Normalized)
BVDSS, (Normalized)

1.1
2.0

1.0 1.5

1.0
Notes :
0.9 1. VGS = 0 V
Notes :
2. ID = 250µA 1. VGS = 10 V
0.5
2. ID = 20 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
TJ, Junction Temperature [°C] TJ, Junction Temperature [°C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

25
Operation in This Area
10
2 is Limited by R DS(on)

20
100 us
ID, Drain Current [A]

ID, Drain Current [A]

10
1 1 ms
10 ms 15
DC
0
10
10

Notes :
-1 1. TC = 25°C
10
2. TJ = 150°C 5
3. Single Pulse

-2
10 0
0 1 2 3
10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [°C]

Figure 11. Transient Thermal Response Curve

0
10

D = 0 .5
ZθJC(t), Thermal Response

0 .2 N o te s :
-1 1 . Z θ JC (t) = 0 .6 ? /W M a x.
10
2 . D u ty F a c to r , D = t 1 /t 2
0 .1
3 . T JM - T C = P D M * Z θ JC (t)
0 .0 5
PDM
0 .0 2
t1
0 .0 1 t2
-2
10 s in g le p u ls e

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

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FCH20N60 / FCA20N60 Rev. A
 FCH20N60 / FCA20N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

5 www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A
 FCH20N60 / FCA20N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

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FCH20N60 / FCA20N60 Rev. A
 FCH20N60 / FCA20N60 600V N-Channel MOSFET
Mechanical Dimensions

TO-247AD (FKS PKG CODE 001)

Dimensions in Millimeters

7 www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A
 FCH20N60 / FCA20N60 600V N-Channel MOSFET
Mechanical Dimensions (Continued)

TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20

3.80 ±0.20
ø3.20 ±0.10 +0.15
9.60 ±0.20 1.50 –0.05

18.70 ±0.20
12.76 ±0.20

19.90 ±0.20

23.40 ±0.20
13.90 ±0.20

2.00 ±0.20
3.50 ±0.20

3.00 ±0.20
16.50 ±0.30

1.00 ±0.20 1.40 ±0.20

+0.15
0.60 –0.05
5.45TYP 5.45TYP
[5.45 ±0.30] [5.45 ±0.30]

Dimensions in Millimeters

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FCH20N60 / FCA20N60 Rev. A
 FCH20N60 / FCA20N60 600V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I15

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FCH20N60 / FCA20N60 Rev. A
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