IRF4N60

POWER MOSFET
GENERAL DESCRIPTION FEATURES
This advanced high voltage MOSFET is designed to ‹ Higher Current Rating
withstand high energy in the avalanche mode and switch ‹ Lower Rds(on)
efficiently. This new high energy device also offers a ‹ Lower Capacitances
drain-to-source diode with fast recovery time. Designed for ‹ Lower Total Gate Charge
high voltage, high speed switching applications such as ‹ Tighter VSD Specifications
power supplies, converters, power motor controls and ‹ Avalanche Energy Specified
bridge circuits.

PIN CONFIGURATION SYMBOL

TO-220/TO-220FP D
Top View
SOU RCE
DRAIN
G ATE

S
1 2 3
N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit
Drain to Current Ё Continuous ID 4.0 A
Ё Pulsed IDM 18
Gate-to-Source Voltage Ё Continue VGS ±20 V
Ё Non-repetitive VGSM ±40 V
Total Power Dissipation PD W
TO-220 96
TO-220FP 38
Operating and Storage Temperature Range TJ, TSTG -55 to 150 к
Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к EAS 80 mJ
(VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25ȍ)
Thermal Resistance Ё Junction to Case șJC 1.70 к/W
Ё Junction to Ambient șJA 62
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 300 к

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 IRF4N60
POWER MOSFET
ORDERING INFORMATION
Part Number Package
....................IRF4N60..............................................TO-220
IRF4N60FP TO-220 Full Package

ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.

CIRF4N60
Characteristic Symbol Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS 600 V
(VGS = 0 V, ID = 250 ӴA)
Drain-Source Leakage Current IDSS mA
(VDS =600 V, VGS = 0 V) 0.1
Gate-Source Leakage Current-Forward IGSSF 100 nA
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse IGSSR -100 nA
(Vgsr = 20 V, VDS = 0 V)
Gate Threshold Voltage VGS(th) 2.0 4.0 V
(VDS = VGS, ID = 250 ӴA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) * RDS(on) ................1.5...............2.4 ȍ
Forward Transconductance (VDS = 50 V, ID = 2.0 A) * gFS 2.5 mhos
Input Capacitance Ciss 520 730 pF
(VDS = 25 V, VGS = 0 V, pF
Output Capacitance Coss 125 180
f = 1.0 MHz)
Reverse Transfer Capacitance Crss 8.0 20 pF
Turn-On Delay Time td(on) 12 20 ns
(VDD = 300 V, ID = 4.0 A, ns
Rise Time tr 7.0 10
VGS = 10 V,
Turn-Off Delay Time td(off) 19 40 ns
RG = 9.1ȍ) *
Fall Time tf 10 20 ns
Total Gate Charge Qg 5.0 10 nC
(VDS = 480 V, ID = 4.0 A, nC
Gate-Source Charge Qgs 2.7
VGS = 10 V)*
Gate-Drain Charge Qgd 2.0 nC
Internal Drain Inductance LD 4.5 nH
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance LS 7.5 nH
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1) VSD 1.5 V
(IS = 4.0 A,
Forward Turn-On Time ton ** ns
dIS/dt = 100A/µs)
Reverse Recovery Time trr 655 ns

* Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2%

** Negligible, Dominated by circuit inductance

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 IRF4N60
POWER MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS

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 IRF4N60
POWER MOSFET
PACKAGE DIMENSION
TO-220

D A
c1
φ PIN 1: GATE
PIN 2: DRAIN
F

PIN 3: SOURCE

E
E1

A
A1
b
L1

b1
c
c1
D
E
L

E1
e
e1
F
L
L1
e A1
φ
b1 c
b

e1 Side View
Front View

TO-220FP

R1 0 I
B 0.1
8²
.5
0
0

.1
.5

C R3 J
R1
Q
D

A
B
A

C
D
E
E

G
K
P

H
I
O

J
K
M
R1

N
.6

O
0

P
Q

b R
G

b
b1
b2
e

b2 N
b1 M
e
R

Front View Side View Back View

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