FQPF7N80C FQPF7N80C

FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET

December 2013

FQP7N80C / FQPF7N80C
N-Channel QFET® MOSFET
800 V, 6.6 A, 1.9 Ω

Description Features
This N-Channel enhancement mode power MOSFET is • 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary planar ID = 3.3 A
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 27 nC)
resistance, and to provide superior switching performance • Low Crss (Typ. 10 pF)
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power • 100% Avalanche Tested
factor correction (PFC), and electronic lamp ballasts.

G G
D G
S TO-220 D
S TO-220F

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter FQP7N80C FQPF7N80C Unit

VDSS Drain-Source Voltage 800 V
ID Drain Current - Continuous (TC = 25°C) 6.6 6.6 * A
- Continuous (TC = 100°C) 4.2 4.2 * A
IDM Drain Current - Pulsed (Note 1) 26.4 26.4 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 580 mJ
IAR Avalanche Current (Note 1) 6.6 A
EAR Repetitive Avalanche Energy (Note 1) 16.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 167 56 W
- Derate above 25°C 1.33 0.44 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering,
TL 300 °C
1/8" from Case for 5 Seconds
* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol Parameter FQP9N90C FQPF9N90CT Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 0.75 2.25 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W

©2003 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQP7N80C / FQPF7N80C Rev. C1
 FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQP7N80C FQP7N80C TO-220 Tube N/A N/A 50 units
FQPF7N80C FQPF7N80C TO-220F Tube N/A N/A 50 units

Electrical Characteristics TC = 25°C unless otherwise noted.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.93 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 800 V, VGS = 0 V -- -- 10 µA
Zero Gate Voltage Drain Current
VDS = 640 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 3.3 A -- 1.57 1.9 Ω
On-Resistance
gFS Forward Transconductance VDS = 50 V, ID = 3.3 A -- 5.5 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1290 1680 pF
Coss Output Capacitance f = 1.0 MHz -- 120 155 pF
Crss Reverse Transfer Capacitance -- 10 13 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 35 80 ns
VDD = 400 V, ID = 6.6 A,
tr Turn-On Rise Time -- 100 210 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 50 110 ns
(Note 4)
tf Turn-Off Fall Time -- 60 130 ns
Qg Total Gate Charge VDS = 640 V, ID = 6.6 A, -- 27 35 nC
Qgs Gate-Source Charge VGS = 10 V -- 8.2 -- nC
Qgd Gate-Drain Charge (Note 4) -- 11 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 6.6 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 26.4 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.6 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 6.6 A, -- 650 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs -- 7.0 -- µC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 25 mH, IAS = 6.6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3.I SD ≤ 8 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.

©2003 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FQP7N80C / FQPF7N80C Rev. C1
 FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET
 !   

VGS
Top : 15.0 V
1 10.0 V
10
8.0 V 1
7.0 V 10
6.5 V
6.0 V
Bottom : 5.5 V o
150 C

ID, Drain Current [A]

ID, Drain Current [A]

0
10
o
o -55 C
25 C
0
10

-1
10
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃ ※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
-2 -1
10 10
10
-1
10
0
10
1 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

4.0

3.5 10
1
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

3.0
VGS = 10V
RDS(ON) [Ω ],

2.5 VGS = 20V

0
10
2.0

150℃ 25℃
※ Notes :
1.5 1. VGS = 0V
※ Note : TJ = 25℃ 2. 250μ s Pulse Test

-1
1.0 10
0 3 6 9 12 15 18 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

2000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 160V
Crss = Cgd
10 VDS = 400V
1500 Ciss
VDS = 640V
VGS, Gate-Source Voltage [V]

8
Capacitance [pF]

1000 Coss 6

※ Notes :
1. VGS = 0 V 4
2. f = 1 MHz
500

Crss 2
※ Note : ID = 6.6A

0 0
10
-1 0
10 10
1 0 5 10 15 20 25 30

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2003 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FQP7N80C / FQPF7N80C Rev. C1
 FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET
Typical Characteristics (Continued)

1.2 3.0

2.5
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
BV DSS , (Normalized)

RDS(ON) , (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 μA 0.5 1. VGS = 10 V
2. ID = 3.3 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

2 2
10 10
Operation in This Area Operation in This Area
is Limited by R DS(on) 10 µs is Limited by R DS(on) 10 µs

1
100 µs 1 100 µs
10 10
1 ms 1 ms
ID, Drain Current [A]
ID, Drain Current [A]

10 ms 10 ms
DC
0 0
10 10 DC

-1 -1
10 ※ Notes : 10 ※ Notes :
o o
1. TC = 25 C 1. TC = 25 C
o o
2. TJ = 150 C 2. TJ = 150 C
3. Single Pulse 3. Single Pulse

-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10

VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FQP7N80C for FQPF7N80C

6
ID, Drain Current [A]

0
25 50 75 100 125 150
TC, Case Temperature [℃]

Figure 10. Maximum Drain Current

vs Case Temperature

©2003 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FQP7N80C / FQPF7N80C Rev. C1
 FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET
Typical Characteristics (Continued)

0
10

ZJC(t), Thermal Response [oC/W]

D = 0 .5

0 .2
※ N o te s :
-1 1 . Z θ J C (t) = 0 .7 5 ℃ /W M a x .
10
0 .1 2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)

0 .0 5
PDM
0 .0 2
0 .0 1 t1
s in g le p u ls e t2
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-1. Transient Thermal Response Curve for FQP7N80C

ZJC(t), Thermal Response [oC/W]

0 D = 0 .5
10

0 .2 ※ N o te s :
1 . Z θ J C (t) = 2 .2 5 ℃ /W M a x .
0 .1 2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)

-1
0 .0 5
10
PDM
0 .0 2
0 .0 1 t1
t2
s in g le p u ls e
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FQPF7N80C

©2003 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FQP7N80C / FQPF7N80C Rev. C1
 FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET
VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
IG = const.
3mA

Charge

Figure 12. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off

Figure 13. Resistive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

V
10V
GS
GS DUT VDD VDS (t)
tp
tp Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

©2003 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FQP7N80C / FQPF7N80C Rev. C1
 FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET
DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

©2003 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FQP7N80C / FQPF7N80C Rev. C1
 FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET
Mechanical Dimensions

Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003

©2003 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FQP7N80C / FQPF7N80C Rev. C1
 FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET
Mechanical Dimensions

Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

©2003 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FQP7N80C / FQPF7N80C Rev. C1
 FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET
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Definition of Terms
Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I66

©2003 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com

FQP7N80C / FQPF7N80C Rev. C1
 FQPF7N80C FQPF7N80C

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