FCH25N60N N-Channel MOSFET

January 2011
SupreMOS®
FCH25N60N tm

N-Channel MOSFET
600V, 25A, 0.126Ω
Features Description
• RDS(on) = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
• Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech-
• Low Effective Output Capacitance nologies. By utilizing this advanced technology and precise pro-
cess control, SupreMOS provides world class Rsp, superior
• 100% Avalanche Tested switching performance and ruggedness.
This SupreMOS MOSF ET fits the industry’ s AC-DC SMPS
• RoHS Compliant
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.

G
TO-247
G D
S S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol Parameter FCH25N60N Units
VDSS Drain to Source Voltage 600 V
VGSS Gate to Source Voltage ±30 V
Continuous (TC = 25oC) 25
ID Drain Current A
Continuous (TC = 100oC) 16
IDM Drain Current Pulsed (Note 1) 75 A
EAS Single Pulsed Avalanche Energy (Note 2) 861 mJ
IAR Avalanche Current 8.3 A
EAR Repetitive Avalanche Energy 2.2 mJ
Peak Diode Recovery dv/dt (Note 3) 20
dv/dt V/ns
MOSFET dv/dt 100
(TC = 25oC) 216 W
PD Power Dissipation
Derate above 25oC 1.72 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum Lead Temperature for Soldering Purpose, o
TL 300 C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol Parameter FCH25N60N Units
RθJC Thermal Resistance, Junction to Case 0.58
o
RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.24 C/W
RθJA Thermal Resistance, Junction to Ambient 40

©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCH25N60N Rev. A2
 FCH25N60N N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FCH25N60N FCH25N60N TO247 - - 30

Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V,TJ = 25oC 600 - - V
ΔBVDSS Breakdown Voltage Temperature o
ID = 1mA, Referenced to 25 C - 0.74 - V/oC
ΔTJ Coefficient
VDS = 480V, VGS = 0V - - 10
IDSS Zero Gate Voltage Drain Current μA
VDS = 480V, TJ = 125oC - - 100
IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA 2.0 - 4.0 V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 12.5A - 0.108 0.126 Ω
gFS Forward Transconductance VDS = 20V, ID = 12.5A - - S

Dynamic Characteristics
Ciss Input Capacitance - 2520 3352 pF
VDS = 100V, VGS = 0V
Coss Output Capacitance - 103 137 pF
f = 1MHz
Crss Reverse Transfer Capacitance - 3.2 5 pF
Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 55 - pF
Cosseff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 262 - pF
Qg(tot) Total Gate Charge at 10V - 57 74 nC
Qgs Gate to Source Gate Charge VDS = 380V, ID = 12.5A, - 10 - nC
VGS = 10V
Qgd Gate to Drain “Miller” Charge (Note 4) - 18 - nC
ESR Equivalent Series Resistance (G-S) Drain Open, f=1MHz - 1 - Ω

Switching Characteristics
td(on) Turn-On Delay Time - 21 52 ns
tr Turn-On Rise Time VDD = 380V, ID = 12.5A - 22 54 ns
td(off) Turn-Off Delay Time RG = 4.7Ω - 68 146 ns
tf Turn-Off Fall Time (Note 4) - 5 20 ns

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 25 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 75 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 12.5A - - 1.2 V
trr Reverse Recovery Time VGS = 0V, ISD = 12.5A - 370 - ns
Qrr Reverse Recovery Charge dIF/dt = 100A/μs - 7 - μC

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 8.3A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 25A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics

FCH25N60N Rev. A2 2 www.fairchildsemi.com

 FCH25N60N N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

100 100
VGS = 15V
10V
8V
6V
4V

ID, Drain Current[A]

ID, Drain Current[A]

o
10 25 C

10
o
150 C o
-55 C

1 *Notes:
*Notes:
1. 250μs Pulse Test
o
1. VDS = 20V
2. TC = 25 C 2. 250μs Pulse Test
0.3 1
0.05 0.1 1 10 30 2 4 6 8
VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
350 100

300
Drain-Source On-Resistance

IS, Reverse Drain Current [A]

o
150 C
250
RDS(ON) [mΩ],

10
o
25 C
200
VGS = 10V

150 VGS = 20V *Notes:

1. VGS = 0V
o
*Note: TC = 25 C 2. 250μs Pulse Test
100 1
0 20 40 60 80 0.4 0.6 0.8 1.0 1.2
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

5
10 10
Coss
VGS, Gate-Source Voltage [V]

4 VDS = 120V
10 8
VDS = 300V
Ciss VDS = 480V
Capacitances [pF]

3
10 6
Crss
2
10 *Note: 4
1. VGS = 0V
2. f = 1MHz
10
1
Ciss = Cgs + Cgd (Cds = shorted) 2
Coss = Cds + Cgd
Crss = Cgd *Note: ID = 12.5A
10
0
0
0.1 1 10 100 600 0 10 20 30 40 50 60
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

FCH25N60N Rev. A2 3 www.fairchildsemi.com

 FCH25N60N N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, [Normalized]

RDS(on), [Normalized]
2.0

1.0 1.5

1.0
0.9
*Notes: *Notes:
1. VGS = 0V 0.5
1. VGS = 10V
2. ID = 1mA 2. ID = 12.5A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C] o
TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
100 30
10μs

100μs
25
1ms
ID, Drain Current [A]

10
10ms
ID, Drain Current [A]

20
DC

1 Operation in This Area

15
is Limited by RDS(on)

10
*Notes:
0.1 o
1. TC = 25 C
o 5
2. TJ = 150 C
3. Single Pulse
0.01 0
1 10 100 1000 25 50 75 100 125 150
o
VDS, Drain-Source Voltage [V] TC, Case Temperature [ C]

Figure 11. Transient Thermal Response Curve

0.5
Thermal Response [ZθJC]

0.2
0.1
0.1
0.05
PDM
0.02
t1
0.01 t2
0.01
*Notes:
o
Single pulse 1. ZθJC(t) = 0.58 C/W Max.
2. Duty Factor, D = t1/t2
3. TJM - TC = PDM * ZθJC(t)
1E-3
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
Rectangular Pulse Duration [sec]

FCH25N60N Rev. A2 4 www.fairchildsemi.com

 FCH25N60N N-Channel MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FCH25N60N Rev. A2 5 www.fairchildsemi.com

 FCH25N60N N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

FCH25N60N Rev. A2 6 www.fairchildsemi.com

 FCH25N60N N-Channel MOSFET
Mechanical Dimensions

TO-247-3L

Dimensions in Millimeters

FCH25N60N Rev. A2 7 www.fairchildsemi.com

 FCH25N60N N-Channel MOSFET
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Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed Full Production make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I51

FCH25N60N Rev. A2 8 www.fairchildsemi.com