FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET

December 2008
TM
SuperFET
FCH47N60_F133 / FCA47N60 / FCA47N60_F109
600V N-Channel MOSFET

Features Description
• 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
• Typ. Rds(on)=0.058Ω
balance mechanism for outstanding low on-resistance and
• Ultra low gate charge (typ. Qg=210nC) lower gate charge performance.
This advanced technology has been tailored to minimize con-
• Low effective output capacitance (typ. Coss.eff=420pF)
duction loss, provide superior switching performance, and with-
• 100% avalanche tested stand extreme dv/dt rate and higher avalanche energy.
• RoHS Compliant Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.

TO-247 TO-3PN
G D FCH Series FCA Series
S G DS
S

Absolute Maximum Ratings

Symbol Parameter FCH47N60_F133 FCA47N60 Unit
VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C) 47 A
- Continuous (TC = 100°C) 29.7 A
IDM Drain Current - Pulsed (Note 1)
141 A
VGSS Gate-Source voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ
IAR Avalanche Current (Note 1) 47 A
EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 417 W
- Derate above 25°C 3.33 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,
300 °C
1/8” from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RθJC Thermal Resistance, Junction-to-Case -- 0.3 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.24 --
RθJA Thermal Resistance, Junction-to-Ambient -- 41.7 °C/W

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev.B3
 FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCH47N60_F133 FCH47N60_F133 TO-247 - - 30
FCA47N60 FCA47N60 TO-3PN - - 30
FCA47N60 FCA47N60_F109 TO-3PN - - 30

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V
VGS = 0V, ID = 250μA, TJ = 150°C -- 650 -- V
ΔBVDSS Breakdown Voltage Temperature
ID = 250μA, Referenced to 25°C -- 0.6 -- V/°C
/ ΔTJ Coefficient
BVDS Drain-Source Avalanche Breakdown VGS = 0V, ID = 47A
-- 700 -- V
Voltage
IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V -- -- 1 μA
VDS = 480V, TC = 125°C -- -- 10 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10V, ID = 23.5A -- 0.058 0.07 Ω
On-Resistance
gFS Forward Transconductance VDS = 40V, ID = 23.5A (Note 4) -- 40 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, -- 5900 8000 pF
f = 1.0MHz
Coss Output Capacitance -- 3200 4200 pF
Crss Reverse Transfer Capacitance -- 250 -- pF
Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 160 -- pF
Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 420 -- pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300V, ID = 47A -- 185 430 ns
RG = 25Ω
tr Turn-On Rise Time -- 210 450 ns
td(off) Turn-Off Delay Time -- 520 1100 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 75 160 ns
Qg Total Gate Charge VDS = 480V, ID = 47A -- 210 270 nC
VGS = 10V
Qgs Gate-Source Charge -- 38 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 110 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 47A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 47A -- 590 -- ns
dIF/dt =100A/μs (Note 4)
Qrr Reverse Recovery Charge -- 25 -- μC

NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 47A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

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FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3
 FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

VGS
Top : 15.0 V
2 10.0 V
10
8.0 V
2
7.0 V 10

ID , Drain Current [A]

6.5 V
ID, Drain Current [A]

6.0 V
Bottom : 5.5 V 150∩
1
10
1
10 25∩
-55∩

∝ Notes :
∝ Note
0 1. 250レs Pulse Test
10 1. VDS = 40V
2. TC = 25∩
10
0 2. 250レs Pulse Test

-1 0 1
10 10 10 2 4 6 8 10
VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
RDS(ON) [ヘ ],Drain-Source On-Resistance

0.20
IDR , Reverse Drain Current [A]

2
0.15 10

VGS = 10V

0.10
1
10
VGS = 20V
150∩ 25∩
0.05
∝ Notes :
1. VGS = 0V
0
∝ Note : TJ = 25∩ 10 2. 250レs Pulse Test

0.00
0 20 40 60 80 100 120 140 160 180 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

30000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
VDS = 100V
25000 Crss = Cgd 10 VDS = 250V
VGS, Gate-Source Voltage [V]

VDS = 400V
20000 8
Capacitance [pF]

Coss

15000 6
∝ Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz
10000 4

5000 Crss 2
∝ Note : ID = 47A

0 0
-1 0 1
10 10 10 0 50 100 150 200 250

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

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FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3
 FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.2 3.0
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.5

RDS(ON), (Normalized)
BVDSS, (Normalized)

1.1
2.0

1.0 1.5

1.0
∝ Notes :
0.9 1. VGS = 0 V
∝ Notes :
2. ID = 250 レA
0.5 1. VGS = 10 V
2. ID = 47 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature
50
Operation in This Area
is Limited by R DS(on)
2
10
100 us 40
1 ms
ID, Drain Current [A]

ID, Drain Current [A]

1
10 10 ms
30
DC

0
10
20

∝ Notes :
o
-1 1. TC = 25 C
10 o 10
2. TJ = 150 C
3. Single Pulse

-2
10 0
0 1 2 3
10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [∩ ]

Figure 10. Transient Thermal Response Curve

D = 0 .5
Zヨ JC(t), Thermal Response

-1
10 ∝ N o te s :
0 .2 1 . Z ヨ J C( t) = 0 .3 ∩ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z ヨ J C( t)
0 .1

0 .0 5 PDM

0 .0 2 t1
-2 t2
10
0 .0 1
s in g le p u ls e

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]

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FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3
 FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

5 www.fairchildsemi.com
FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3
 FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

6 www.fairchildsemi.com
FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3
 FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Mechanical Dimensions

TO-247AB

Dimensions in Millimeters

7 www.fairchildsemi.com
FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3
 FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3PN

Dimensions in Millimeters

9 www.fairchildsemi.com
FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3
 FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
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Rev. I37

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FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3
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