P-CHANNEL ENHANCEMENT P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET ZVP2110C MODE VERTICAL DMOS FET ZVP2110A
ISSUE 2 – MARCH 94 ISSUE 2 – MARCH 94
FEATURES FEATURES
* 100 Volt VDS * 100 Volt VDS
* RDS(on)=8Ω * RDS(on)=8Ω

G D
D G
S S
REFER TO ZVP2110A FOR GRAPHS
E-Line E-Line
TO92 Compatible TO92 Compatible
ABSOLUTE MAXIMUM RATINGS. ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V DS -100 V Drain-Source Voltage V DS -100 V
Continuous Drain Current at T amb=25°C ID -230 mA Continuous Drain Current at T amb=25°C ID -230 mA
Pulsed Drain Current I DM -3 A Pulsed Drain Current I DM -3 A
Gate Source Voltage V GS ± 20 V Gate Source Voltage V GS ± 20 V
Power Dissipation at T amb=25°C P tot 700 mW Power Dissipation at T amb=25°C P tot 700 mW
Operating and Storage Temperature Range T j:T stg -55 to +150 °C Operating and Storage Temperature Range T j :T stg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown BV DSS -100 V I D=-1mA, V GS=0V Drain-Source Breakdown BV DSS -100 V I D=-1mA, V GS=0V
Voltage Voltage
Gate-Source Threshold V GS(th) -1.5 -3.5 V ID=-1mA, V DS= V GS Gate-Source Threshold V GS(th) -1.5 -3.5 V ID=-1mA, V DS= V GS
Voltage Voltage
Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V
Zero Gate Voltage Drain I DSS -1 µA V DS=-100 V, V GS=0 Zero Gate Voltage Drain I DSS -1 µA V DS=-100 V, V GS=0
Current -100 µA V DS=-80 V, V GS=0V, T=125°C (2) Current -100 µA V DS=-80 V, V GS=0V, T=125°C (2)
On-State Drain Current(1) I D(on) -750 mA V DS=-25 V, V GS=-10V On-State Drain Current(1) I D(on) -750 mA V DS=-25 V, V GS=-10V
Static Drain-Source On-State R DS(on) 8 Ω V GS=-10V,I D=-375mA Static Drain-Source On-State R DS(on) 8 Ω V GS=-10V,I D=-375mA
Resistance (1) Resistance (1)
Forward Transconductance g fs 125 mS V DS=-25V,I D=-375mA Forward Transconductance g fs 125 mS V DS=-25V,I D=-375mA
(1)(2) (1)(2)
Input Capacitance (2) C iss 100 pF Input Capacitance (2) C iss 100 pF
Common Source Output C oss 35 pF V DS=-25V, V GS=0V, f=1MHz Common Source Output C oss 35 pF V DS=-25V, V GS=0V, f=1MHz
Capacitance (2) Capacitance (2)
Reverse Transfer C rss 10 pF Reverse Transfer C rss 10 pF
Capacitance (2) Capacitance (2)
Turn-On Delay Time (2)(3) t d(on) 7 ns Turn-On Delay Time (2)(3) t d(on) 7 ns
Rise Time (2)(3) tr 15 ns Rise Time (2)(3) tr 15 ns
V DD ≈-25V, I D=-375mA V DD ≈-25V, I D=-375mA
Turn-Off Delay Time (2)(3) t d(off) 12 ns Turn-Off Delay Time (2)(3) t d(off) 12 ns
Fall Time (2)(3) tf 15 ns Fall Time (2)(3) tf 15 ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test. (2) Sample test.
(
3-424 3-421 3
)
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
 ZVP2110A ZVP2110A
TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS
VGS= VGS=
-1.6
-20V -1.6 -20V
ID(On) - Drain Current (Amps)

-16V -16V
-1.4

ID(On) - Drain Current (Amps)

-12V -1.4
-12V 250 250
-1.2 -10V

gfs-Transconductance (mS)

gfs-Transconductance (mS)
-1.2 -10V
-9V VDS=-10V
-1.0 -9V 200 200
-1.0
-8V -8V
-0.8 -0.8 150 150 VDS=-10V
-7V
-7V
-0.6
-6V -0.6
-6V 100 100
-0.4 -0.4
-5V
-0.2 -4.5V -5V 50 50
-4V -0.2
-4V -4.5V
0 -4V
-3.5V 0 -3.5V 0 0
0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -2 -4 -6 -8 -10

VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)

Output Characteristics Saturation Characteristics Transconductance v drain current Transconductance v gate-source voltage

-8 0

VGS-Gate Source Voltage (Volts)

-1.6
VDS-Drain Source Voltage (Volts)

80 ID=- 0.5A
-2
ID(On) Drain Current (Amps)

-1.4
VDS=

C-Capacitance (pF)
-6 -1.2 -4 -25V -50V -100V
60
VDS=-10V -6
-1.0 Ciss
-4 -0.8 -8
40
-10
ID= -0.6
-0.5A -12
-2 -0.4 20
-0.25A Coss -14
-0.2
-0.1A Crss
0 0 -16
0
0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 0 -20 -40 -60 -80 -100 0 0.5 1.0 1.5 2.0 2.5 3.0

VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC)
Transfer Characteristics Capacitance v drain-source voltage Gate charge v gate-source voltage
Voltage Saturation Characteristics
RDS(on)-Drain Source On Resistance (Ω)

100 2.6
Normalised RDS(on) and VGS(th)

2.4

VGS=-4V 2.2 VGS=-10V

2.0 ID=-0.375A
)
(on
1.8 DS
R
-5V ce
-7V an
10 1.6 ist
-10V Res
e
1.4 urc
-So
ain
-20V 1.2 Dr VGS=VDS
1.0 ID=-1mA
Gate Thresh
0.8 old Voltage VGS
(th)
1 0.6
10 100 1000 -40 -20 0 20 40 60 80 100 120 140 160 180°C

ID-Drain Current (mA)

On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature

3-422 3-423
 ZVP2110A ZVP2110A
TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS
VGS= VGS=
-1.6
-20V -1.6 -20V
ID(On) - Drain Current (Amps)

-16V -16V
-1.4

ID(On) - Drain Current (Amps)

-12V -1.4
-12V 250 250
-1.2 -10V

gfs-Transconductance (mS)

gfs-Transconductance (mS)
-1.2 -10V
-9V VDS=-10V
-1.0 -9V 200 200
-1.0
-8V -8V
-0.8 -0.8 150 150 VDS=-10V
-7V
-7V
-0.6
-6V -0.6
-6V 100 100
-0.4 -0.4
-5V
-0.2 -4.5V -5V 50 50
-4V -0.2
-4V -4.5V
0 -4V
-3.5V 0 -3.5V 0 0
0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -2 -4 -6 -8 -10

VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)

Output Characteristics Saturation Characteristics Transconductance v drain current Transconductance v gate-source voltage

-8 0

VGS-Gate Source Voltage (Volts)

-1.6
VDS-Drain Source Voltage (Volts)

80 ID=- 0.5A
-2
ID(On) Drain Current (Amps)

-1.4
VDS=

C-Capacitance (pF)
-6 -1.2 -4 -25V -50V -100V
60
VDS=-10V -6
-1.0 Ciss
-4 -0.8 -8
40
-10
ID= -0.6
-0.5A -12
-2 -0.4 20
-0.25A Coss -14
-0.2
-0.1A Crss
0 0 -16
0
0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 0 -20 -40 -60 -80 -100 0 0.5 1.0 1.5 2.0 2.5 3.0

VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC)
Transfer Characteristics Capacitance v drain-source voltage Gate charge v gate-source voltage
Voltage Saturation Characteristics
RDS(on)-Drain Source On Resistance (Ω)

100 2.6
Normalised RDS(on) and VGS(th)

2.4

VGS=-4V 2.2 VGS=-10V

2.0 ID=-0.375A
)
(on
1.8 DS
R
-5V ce
-7V an
10 1.6 ist
-10V Res
e
1.4 urc
-So
ain
-20V 1.2 Dr VGS=VDS
1.0 ID=-1mA
Gate Thresh
0.8 old Voltage VGS
(th)
1 0.6
10 100 1000 -40 -20 0 20 40 60 80 100 120 140 160 180°C

ID-Drain Current (mA)

On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature

3-422 3-423