SEMICONDUCTOR 9N90 Series RoHS

RoHS
Nell High Power Products
N-Channel Power MOSFET
9A, 900Volts

DESCRIPTION
D
The Nell 9N90 is a three-terminal silicon device
with current conduction capability of 9A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 900V, and max. threshold voltage of 5 volts.
They are designed for use in applications such as G G
D
switched mode power supplies, DC to DC converters, D S
S
PWM motor controls, bridge circuits and general
TO-3PB TO-247AB
purpose switching applications. (9N90B) (9N90C)

FEATURES D (Drain)

RDS(ON) = 1.4Ω @ VGS = 10V

Ultra low gate charge(58nC max.)
Low reverse transfer capacitance G
(Gate)
(C RSS = 14pF typical)
Fast switching capability S (Source)

100% avalanche energy specified

Improved dv/dt capability PRODUCT SUMMARY
150°C operation temperature ID (A) 9
VDSS (V) 900
RDS(ON) (Ω) 1.4 @ V GS = 10V
QG(nC) max. 58

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS VALUE UNIT
VDSS Drain to Source voltage T J =25°C to 150°C 900
V DGR Drain to Gate voltage R GS =20KΩ 900 V
V GS Gate to Source voltage ±30
T C =25°C 9
ID Continuous Drain Current
T C =100°C 5.6
A
I DM Pulsed Drain current(Note 1) 36
I AR Avalanche current(Note 1) 9
E AR Repetitive avalanche energy(Note 1) l AR =9A, R GS =50Ω, V GS =10V 28
mJ
E AS Single pulse avalanche energy(Note 2) l AS =9A, L =21mH 900
dv/dt Peak diode recovery dv/dt(Note 3) 4 V /ns
TO-3PB 240
Total power dissipation T C =25°C W
TO-247AB 160
PD
TO-3PB 2.22
Linear derating factor above T C =25 ° C T C =25°C ° C/W
TO-247AB 1.28
TJ Operation junction temperature -55 to 150
T STG Storage temperature -55 to 150 ºC
TL Maximum soldering temperature, for 10 seconds 1.6mm from case 300
Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m)
Note: 1. Repetitive rating: pulse width limited by junction temperature.
2 . l AS =9A, L=21mH, V DD =50V, R GS =25Ω, starting T J =25°C.
3 . I SD ≤ 9A, di/dt ≤ 200A/µs, V DD ≤ V (BR)DSS , starting T J = 25 °C.

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 SEMICONDUCTOR 9N90 Series RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL PARAMETER MIN. TYP. MAX. UNIT

TO-3PB 0.52
Rth(j-c) Thermal resistance, junction to case
TO-247AB 0.78
ºC/W
TO-3PB 40
Rth(j-a) Thermal resistance, junction to ambient
TO-247AB 50

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT

OFF CHARACTERISTICS

V(BR)DSS Drain to source breakdown voltage I D = 250μA, V GS = 0V 900 V

▲V (BR)DSS/▲T J Breakdown voltage temperature coefficient I D = 250μA, V DS =V GS 0.99 V/ºC

V DS =900V, V GS =0V T C =25°C 10

I DSS Drain to source leakage current μA
V DS =720V, V GS =0V T C =125°C 100

Gate to source forward leakage current V GS = 30V, V DS = 0V 100

I GSS nA
Gate to source reverse leakage current V GS = -30V, V DS = 0V -100

ON CHARACTERISTICS
R DS(ON) Static drain to source on-state resistance V GS =10V, l D =4.5A 1.12 1.4 Ω
V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 3 5 V

DYNAMIC CHARACTERISTICS

C ISS Input capacitance 2100 2730

C OSS Output capacitance V DS =25V, V GS =0V, f=1MHz 175 230 pF

C RSS Reverse transfer capacitance 14 18

SWITCHING CHARACTERISTICS

t d(ON) Turn-on delay time 50 110

tr Rise time V DD =450V, V GS =10V 120 250
ns
t d(OFF) Turn-off delay time I D =11A, R GS =25Ω (Note1,2) 100 210

tf Fall time 75 160

QG Total gate charge 45 58

V DD = 720V, V GS =10V
Q GS Gate to source charge 13 nC
I D =11A, (Note1,2)
Q GD Gate to drain charge (Miller charge) 18

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT
VSD Diode forward voltage I SD = 9A, V GS = 0V 1.4 V
Is (Is D ) Continuous source to drain current Integral reverse P-N junction 9
diode in the MOSFET
D (Drain)

A
I SM Pulsed source current 36
G
(Gate)

S (Source)

t rr Reverse recovery time I SD = 9A, V GS = 0V, 550 ns

dI F /dt = 100A/µs
Q rr Reverse recovery charge 6.5 μC

Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.

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 SEMICONDUCTOR 9N90 Series RoHS
RoHS
Nell High Power Products

ORDERING INFORMATION SCHEME

9 N 90 B

Current rating, ID
9 = 9A

MOSFET series
N = N-Channel

Voltage rating, VDS

90 = 900V

Package type
B = TO-3PB
C = TO-247AB

■ TEST CIRCUITS

Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms

D.U.T. + V GS Period
P.W.
(Driver) P.W. D=
Period
V DS
V GS =10V
-
l FM , Body Diode forward current
+ l SD
(D.U.T) di/dt
- L
l RM

Body Diode Reverse Current

RG
Body Diode Recovery dv/dt
Driver V DD V DS
* dv/dt controlled by R G (D.U.T)
Same Type * l SD controlled by pulse period V DD
V GS * D.U.T.-Device under test
as D.U.T.

Body Diode Forward Voltage Drop

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 SEMICONDUCTOR 9N90 Series RoHS
RoHS
Nell High Power Products

■ TEST CIRCUIT(Cont.)

Fig.2A Switching test circuit Fig.2B Switching Waveforms

RD V DS
V DS 90%

V GS

RG

V DD
D.U.T. 10%
V GS
10V
t d(ON) t d(OFF)
Pulse Width ≤ 1µs tR
Duty Factor ≤ 0.1% tF

Fig.3A Gate charge test circuit Fig.3B Gate charge waveform

V GS

Same Type as
50kΩ QG
D.U.T.
12V
10V
0.2µF 0.3µF

V DS
Q GS Q GD

V GS
D.U.T.

3mA

Charge

Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching
waveforms

L
V DS

BV DSS

l AS

RD V DD
l D(t)
V DS(t)
D.U.T. V DD
10V

tp
Time
tp

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 SEMICONDUCTOR 9N90 Series RoHS
RoHS
Nell High Power Products
■ TYPICAL CHARACTERISTICS

Fig.1 On-State characteristics Fig.2 Transfer characteristics

V GS
Top: 15V
10V
8V
10 1 7V 10 1
Drain Current, l D (A)

6.5V

Drain current, l D (A)

6V 150ºC
Bottorm: 5.5V

-55ºC
10 0
25ºC
10 0

Note: Note:
1. 250µs Pulse Test 1. V DS = 50V
10 -1 2. 250µs Pulse Test
2. T C = 25°C
10 -1
10 -1 10 0 10 1 2 4 6 8 10

Drain-Source voltage, V DS (V) Gate-Source voltage, V GS (V)

Fig.3 On-Resistance variation vs. drain Fig.4 Body diode forward voltage variation
current and gate voltage vs. Source current and Temperatue
Drain-Source On-Resistance, R DS(ON) (Ω)

2.0
Note:
Reverse drain current, l DR (A)

T J = 25°C

1.5 10 1

V GS = 10V
1.0

10 0
150ºC
0.5 V GS = 20V 25ºC
Note:
1. V GS = 0V
2. 250µs Pulse Test
0.0 10 -1
0 5 10 15 20 25 30 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Drain current, I D (A) Source-Drain voltage, V SD (V)

Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics

3600 12
C iss = C gs +C gd ( C gs = shorted )
Gate-to-Source voltage,V GS (V)

C oss = C ds +C gd
3000 C rss = C gd 10 V DS = 180V
V DS = 450V
Capacitance, (pF)

2500 C ISS V DS = 720V

8

2000
C OSS 6
1500
Note: 4
1000 1. V GS = 0V
C RSS
2. f = 1MH z
2
500
Note: l D = 9A
0 0
10 -1 10 0 10 1 0 10 20 30 40 50

Drain-Source voltage, V DS (V) Total gate charge, Q G (nC)

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 SEMICONDUCTOR 9N90 Series RoHS
RoHS
Nell High Power Products
■ TYPICAL CHARACTERISTICS

Fig.7 Breakdown voltage variation vs. Fig.8 On-Resistance variation vs.

.
Temperature Temperature

1.2 3.0
Drain-Source breakdown voltage,

Drain-Source On-Resistance,
2.5

R Ds(ON) , (Normalized)
1.1
BV Dss (Normalized)

2.0

1.0 1.5

1.0
0.9 Note:
1. V GS = 0V Note:
0.5
2. l D = 250μA 1. V GS = 10V
2. l D = 4.5A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200

Junction temperature, T j (°C) Junction temperature, T J (°C)

Fig.10 Maximum drain current vs.

Fig.9 Maximum safe operating area
Case temperature

10
10 2 Operation in This Area is Limited by R DS(on)

10μs
8
Drain current, l D , (A)

100µs
10 1
Drain current, l D , (A)

10ms 1ms
6
DC
10 0
4

10 -1 Note:
2
1.T C = 25°C
2.T J = 150°C
3.Sing Pulse
10 -2 0
10 0 10 1 10 2 10 3 25 50 75 100 125 150

Drain-Source voltage, V DS (V) Case temperature, T C (°C)

Fig.11 Transient thermal response curve

10 0
Thermal response, Rth(j-c) (t)

D = 0.5

0.2
10 -1

0.1 P DW
0.05 t1
t2
0.02 Notes:

0.01 Single pulse 1. Rth(j-c) (t) = 0.50°C/W Max.

10 -2 2. Duty factor, D = t1/ t 2
3. TJW - TC = PDW * Rth(j-c) (t)

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1

Square wave pulse duration, t 1 (sec)

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 SEMICONDUCTOR 9N90 Series RoHS
RoHS
Nell High Power Products

Case Style

TO-247AB

4.69 (0.185)
15.49 (0.610) 5.31 (0.209)
16.26 (0.640) 1.49 (0.059)
2.49 (0.098)
5.38 (0.212)
16.15 (0.242)
6.20 (0.244)

Drain
20.80 (0.819)
21.46 (0.845)
3.55 (0.138)
3.81 (0.150)

G D S
2.87 (0.113)
4.50 (0.177)Max
3.12 (0.123)
1.65 (0.065) 0.40 (0.016)
(TYP.)
19.81 (0.780) 2.13 (0.084) 0.79 (0.031)
20.32 (0.800)
1.01 (0.040)
1.40 (0.055)
(TYP.)

2.21 (0.087)
5.45 (0.215) 5.45 (0.215) 2.59 (0.102)

D (Drain)

G
(Gate)
All dimensions in millimeters(inches)
S (Source)

TO-3P(B)
5.0 ±0 . 2

15.6±0.4 4.8±0.2
2.0

1.8

9.6 2.0±0.1
19.9±0.3

4.0

Φ3.2 ± 0,1

2
20.0 min

4.0 max

3
+0.2 +0.2
1.05 -0.1 0.65 -0.1

5.45±0.1 5.45±0.1 1.4

G D S

D (Drain)

1 2 3

G
(Gate)

All dimensions in millimeters(inches) S (Source)

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