SEMICONDUCTOR 16N60 Series RoHS

RoHS
Nell High Power Products

N-Channel Power MOSFET

(16A, 600Volts)

DESCRIPTION
The Nell 16N60 is a three-terminal silicon
device with current conduction capability of 16A, D
fast switching speed, low on-state resistance,
breakdown voltage rating of 600V ,and max.
threshold voltage of 4 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, server/telecom G G
D D
power, FPD TV power, ATX power, and industrial S TO-220AB S TO-220F
power applications.
(16 N60A ) (16N60AF)

D
FEATURES
RDS(ON) = 0.17Ω @ VGS = 10V
Ultra low gate charge(52.3nC max.)
Low reverse transfer capacitance G
(C RSS = 5pF typical) D
Fast switching capability S
TO-3PB
100% avalanche energy specified
Improved dv/dt capability (16N60B)
150°C operation temperature

D (Drain)

PRODUCT SUMMARY
ID (A) 16
G
VDSS (V) 600 (Gate)
RDS(ON) (Ω) 0.17 @ V GS = 10V
QG(nC) max. 52.3
S (Source)

www.nellsemi.com Page 1 of 10
 SEMICONDUCTOR 16N60 Series RoHS
RoHS
Nell High Power Products

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS VALUE UNIT
VDSS Drain to Source voltage T J =25°C to 150°C 600
V DGR Drain to Gate voltage R GS =20KΩ 600 V
V GS Gate to Source voltage ±30
T C =25°C 16
ID Continuous Drain Current
T C =100°C 10.1
I DM Pulsed Drain current(Note 1) 48 A

I AR Avalanche current(Note 1) 5.3

E AR Repetitive avalanche energy(Note 1) I AR =16A, R GS =50Ω, V GS =10V 1.34
mJ
E AS Single pulse avalanche energy(Note 2) I AS =5.3A, L=7.1mH 355
MOSFET dv/dt ruggedness(Note 3) 100
dv/dt V/ns
Peak diode recovery dv/dt(Note 3) 20

TO-220AB/TO-3PB 134.4
Total power dissipation T C =25°C W
TO-220F 35.7
PD
TO-220AB/TO-3PB 1.08
Derate above 25 ° C T C =25°C W/ ºC
TO-220F 0.29
TJ Operation junction temperature -55 to 150
T STG Storage temperature -55 to 150 ºC
TL Maximum soldering temperature, for 10 seconds 1.6mm from case 300
Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m)

Note: 1. Repetitive rating: pulse width limited by junction temperature. .

2 . I AS = 5.3A, V DD = 50V, R GS = 25Ω, starting T J =25°C.
3 . I SD ≤ 16A, di/dt ≤ 200 A/µs, V DD = 380V, starting T J = 25°C.

THERMAL RESISTANCE
SYMBOL PARAMETER Min. Typ. Max. UNIT

TO-220AB/TO-3PB 0.93
Rth(j-c) Thermal resistance, junction to case
TO-220F 3.5

TO-3PB 0.24
Rth(c-s) Thermal resistance, case to heatsink ºC/W
TO-220AB/TO-220F 0.5

TO-3PB 40
Rth(j-a) Thermal resistance, junction to ambient
TO-220AB/TO220F 62.5

www.nellsemi.com Page 2 of 10
 SEMICONDUCTOR 16N60 Series RoHS
RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT

OFF CHARACTERISTICS

V(BR)DSS Drain to source breakdown voltage I D = 1mA, V GS = 0V 600 V

▲V (BR)DSS/▲T J Breakdown voltage temperature coefficient I D = 1mA, V DS =V GS 0.73 V/ºC

V DS =600V, V GS =0V T C = 25°C 10

I DSS Drain to source leakage current μA
V DS =480V, V GS =0V T C =125°C 100

Gate to source forward leakage current V GS = 30V, V DS = 0V 100

I GSS nA
Gate to source reverse leakage current V GS = -30V, V DS = 0V -100

ON CHARACTERISTICS
R DS(ON) Static drain to source on-state resistance V GS = 10V, l D = 8A 0.17 0.199 Ω
V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 2 4 V

V DS = 40V TO-3PB 20
g fs Forward transconductance S
l D = 8A
TO-220AB/TO-220F 13

DYNAMIC CHARACTERISTICS

C ISS Input capacitance 1630 2170

C OSS Output capacitance V DS = 100V, V GS = 0V, f =1MHz 70 95

C RSS Reverse transfer capacitance 5 10 pF

C OSS Output capacitance V DS = 380V, V GS = 0V, f =1MHz 40 60

C oss eff. Effective output capacitance V DS = 0 to 480V, V GS = 0V 176

SWITCHING CHARACTERISTICS

t d(ON) Turn-on delay time 15.8 41.6

tr Rise time V DD = 380V, V GS = 10V 15.5 41
ns
t d(OFF) Turn-off delay time I D = 8A, R GS = 4.7Ω (Note1,2) 60.3 130.6

tf Fall time 20.2 50.4

QG Total gate charge 40.2 52.3

V DD = 380V, V GS = 10V
Q GS Gate to source charge 6.7 nC
I D = 8A, (Note1,2)
Q GD Gate to drain charge (Miller charge) 12.9

ESR Equivalent series resistance (G-S) Drain open 2.9 Ω

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT
VSD Diode forward voltage I SD = 8A, V GS = 0V 1.2 V
Is (Is D ) Continuous source to drain current Integral reverse P-N junction 16
diode in the MOSFET
D (Drain)

A
I SM Pulsed source current 48
G
(Gate)

S (Source)

t rr Reverse recovery time I SD = 8A, V GS = 0V, 319 ns

dI F /dt = 100A/µs
Q rr Reverse recovery charge 4.4 μC

Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.

www.nellsemi.com Page 3 of 10
 SEMICONDUCTOR 16N60 Series RoHS
RoHS
Nell High Power Products

ORDERING INFORMATION SCHEME

16 N 60 B

Current rating, ID
16 = 16A

MOSFET series
N = N-Channel

Voltage rating, VDS

60 = 600V

Package type
A = TO-220AB
AF = TO-220F
B = TO-3P(B)

■ Gate charge test circuit & waveform

V GS
Qg

RL 10V
V DS Q gs Q gd
V GS

(D.U.T)
1mA

Charge

www.nellsemi.com Page 4 of 10
 SEMICONDUCTOR 16N60 Series RoHS
RoHS
Nell High Power Products

■ RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORM

RL V DS
V DS 90%
V DD
V GS
RG

D.U.T. 10%
V GS
10V
t d(ON) tr t d(OFF) tf
t on t off

■ UNCLAMPED INDUCTIVE SWITCHING TEST CIRCUIT & WAVEFORMS

L
V DS E AS =
1
2 · AS
L l 2

BV DSS
lD
l AS
RG
V DD
l D (t)

D.U.T. V DD
10V
tp V DS (t)
Time
tP

■ PEAK DIODE RECOVERY dv/dt TEST CIRCUIT & WAVEFORMS

Gate Pulse Width

+ V GS D=
D.U.T. Gate Pulse Period
(Driver) 10V
V DS
l FM , Body Diode Forward Current
-
di/dt
I SD l SD
L (D.U.T) l RM

Body Diode Reverse Current

Driver
RG
Same Type Body Diode Recovery dv/dt
as DUT V DD
V DS V DD
V GS * dv/dt controlled by R G (D.U.T)
* l SD controlled by pulse period

Body Diode
Forward Voltage Drop

www.nellsemi.com Page 5 of 10
 SEMICONDUCTOR 16N60 Series RoHS
RoHS
Nell High Power Products
■ TYPICAL CHARACTERISTICS

Fig.1 On-State characteristics Fig.2 Transfer characteristics

100 100
V GS
Top: 15V
10V
8V
7V
Drain Current, l D (A)

6V

Drain current, l D (A)

5V 150ºC
10 4.5V
10
4V
25ºC

-55ºC

1 1

Note: Note:
1. 250µs Pulse Test 1. V DS = 20V
2. 250µs Pulse Test
2. T C = 25°C
0.1 0.1
0.1 1 10 20 2 4 6 8

Drain-Source voltage, V DS (V) Gate-Source voltage, V GS (V)

Fig.3 On-Resistance variation vs. drain Fig.4 Body diode forward voltage variation
current and gate voltage vs. Source current and Temperatue
Drain-Source On-Resistance, R DS(ON) (Ω)

0.6 100
Reverse drain current, l S (A)

0.5

150ºC
0.4
25ºC
10
V GS = 10V
0.3
V GS = 20V

0.2 Note:
Note: 1. V GS = 0V
T C = 25°C 2. 250µs Pulse Test
0.1 1
0 10 20 30 40 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Drain current, I D (A) Body diode forward voltage, V SD (V)

Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics

1000 12
C iss = C gs +C gd ( C ds = shorted )
V DS = 120V
C oss = C ds +C gd
Gate-Source voltage,V GS (V)

C rss = C gd 10 V DS = 380V
V DS = 480V
7500
Capacitance (pF)

Coss Note:
1. V GS = 0V 8
2. f = 1 MHz
5000 6

4
2500 Ciss
2
Crss Note: l D = 8A
0 0
0.1 1 10 100 600 0 10 20 30 40 50

Drain-Source voltage, V DS (V) Total gate charge, Q G (nC)

www.nellsemi.com Page 6 of 10
 SEMICONDUCTOR 16N60 Series RoHS
RoHS
Nell High Power Products
Fig.7 Breakdown voltage variation vs. Fig.8 On-Resistance variation vs.
Temperature Temperature

1.2 3.0
Drain-Source breakdown voltage,

Drain-Source On-Resistance,
2.5

R Ds(ON) (Normalized)
1.1
BV Dss (Normalized)

2.0

1.0 1.5

1.0
0.9
Note:
Note: 0.5
1. V GS = 0V 1. V GS = 10V
2. l D = 1mA
250μA 2. l D = 8A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200

Junction temperature, T j (°C) Junction temperature, T J (°C)

Fig.9 Maximum safe operating area Fig.10 Maximum safe operating area
( 16N60A/16N60B ) (16N60AF)

100 100
20μs
20μs

100μs 100μs
10 10
Drain current, l D (A)

Drain current, l D (A)

1ms 1ms
Operation in This Area is 10ms 10ms
Limited by R DS (on) Operation in This Area is
DC Limited by R DS (on)
1 1 DC

0.1 0.1
Note: Note:
1. T C = 25 ° C 1. T C = 25 ° C
2. T J = 150°C 2. T J = 150°C
3. Sing Pulse 3. Sing Pulse
0.01 0.01
1 10 100 1000 1 10 100 1000

Drain-Source voltage, V DS (V) Drain-Source voltage, V DS (V)

Fig.11 Maximum drain current vs.

Case temperature

20

15
Drain current, l D (A)

10

0
25 50 75 100 125 150

Case temperature, T J (°C)

www.nellsemi.com Page 7 of 10
 SEMICONDUCTOR 16N60 Series RoHS
RoHS
Nell High Power Products

Fig.11-1 Transient thermal response curve

for 16N60B & 16N60A

2
Thermal response, Rth(j-c) (°C/W)

D = 0.5

0.2
0.1
0.1 P DM
0.05
t1
0.02
t2
0.01 Notes:

1. Rth(j-c) (t) = 0.93°C/W Max.

0.01 2. Duty factor, D = t1/ t 2
Single pulse 3. TJM - TC = PDM * Rth(j-c) (t)
0.005
10 -5 10 -4 10 -3 10 -2 10 -1 1

Rectangular pulse duration (sec)

Fig.11-2 Transient thermal response curve

for 16N60AF
5
Thermal response, Rth(j-c) (°C/W)

D = 0.5
1
0.2

0.1
0.05 P DM
0.02 t1
0.1
0.01 t2
Notes:
Single pulse 1. Rth(j-c) (t) = 3.5°C/W Max.
2. Duty factor, D = t1/ t 2
3. TJM - TC = PDM * Rth(j-c) (t)
0.01
10 -5 10 -4 10 -3 10 -2 10 -1 1 10 100

Rectangular pulse duration (sec)

www.nellsemi.com Page 8 of 10
 SEMICONDUCTOR 16N60 Series RoHS
RoHS
Nell High Power Products

Case Style

TO-220AB

10.54 (0.415) MAX.

9.40 (0.370) 3.91 (0.154) 4.70 (0.185)

9.14 (0.360) 3.74 (0.148) 4.44 (0.1754)
1.39 (0.055)
2.87 (0.113)
1.14 (0.045)
2.62 (0.103)

3.68 (0.145)
3.43 (0.135)
16.13 (0.635) 15.32 (0.603)
15.87 (0.625) 14.55 (0.573)
PIN 8.89 (0.350)
1 2 3 8.38 (0.330)
4.06 (0.160) 29.16 (1.148)
3.56 (0.140) 28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045) 14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095) 0.90 (0.035)
2.65 (0.104) 0.70 (0.028)
5.20 (0.205) 0.56 (0.022)
2.45 (0.096)
4.95 (0.195) 0.36 (0.014)

D (Drain)

G
(Gate)
All dimensions in millimeters(inches)
S (Source)

TO-3P(B)
5.0 ±0 . 2

15.6±0.4 4.8±0.2
2.0

1.8

9.6 2.0±0.1
19.9±0.3

4.0

Φ3.2 ± 0,1

2
20.0 min

4.0 max

3
+0.2 +0.2
1.05 -0.1 0.65 -0.1

5.45±0.1 5.45±0.1 1.4

G D S

D (Drain)

1 2 3

G
(Gate)

All dimensions in millimeters(inches) S (Source)

www.nellsemi.com Page 9 of 10
 SEMICONDUCTOR 16N60 Series RoHS
RoHS
Nell High Power Products

Case Style

TO-220F

10.6
10.4 3.4
3.1

2.8
2.6

3.7
3.2 7.1
6.7

16.0
15.8
16.4
15.4 2
1 3 10°
3.3
3.1

13.7
13.5

0.9 0.48
2.54 0.7 0.44
TYP 2.54
2.85
TYP
2.65

4.8
4.6

D (Drain)

G
(Gate)

S (Source)

All dimensions in millimeters

www.nellsemi.com Page 10 of 10