SEMICONDUCTOR IRF3710 Series RoHS

RoHS
Nell High Power Products
N-Channel Power MOSFET
(57A, 100Volts)
DESCRIPTION
The Nell IRF3710 are N-channel enhancement mode D
silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand
level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and
reliable device for use in a wide variety of applications
such as switching regulators, convertors, motor drivers G TO-220AB
D
and drivers for high power bipolar switching transistors S
(IRF3710A)
requiring high speed and low gate drive power.
These transistors can be operated directly from
D (Drain)
integrated circuits.

FEATURES
RDS(ON) = 0.023Ω @ VGS = 10V G
(Gate)
Ultra low gate charge(130nC max.)
Low reverse transfer capacitance S (Source)
(C RSS = 72pF typical)
Fast switching capability
100% avalanche energy specified
PRODUCT SUMMARY
Improved dv/dt capability
175°C operation temperature ID (A) 57
VDSS (V) 100
RDS(ON) (Ω) 0.023 @ V GS = 10V
QG(nC) max. 130

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS VALUE UNIT
VDSS Drain to Source voltage(Note 1) T J =25°C to 150°C 100
V DGR Drain to Gate voltage R GS =20KΩ 100 V
V GS Gate to Source voltage ±20
V GS =10V, T C =25°C 57
ID Continuous Drain Current
V GS =10V, T C =100°C 40
A
I DM Pulsed Drain current (Note 1) 230
I AR Repetitive avalanche current (Note 1) 28
E AR Repetitive avalanche energy(Note 1) I AR =28A, R GS =50Ω, V GS =10V 20 mJ
E AS Single pulse avalanche energy (Note 2) I AS =28A, L=0.7mH 280 mJ
dv/dt Peak diode recovery dv/dt(Note 3) 5.8 V /ns
Total power dissipation T C =25°C 200 W
PD
Derating factor above 25 ° C 1.3 W /°C
TJ Operation junction temperature -55 to 175
T STG Storage temperature -55 to 175 ºC

TL Maximum soldering temperature, for 10 seconds 1.6mm from case 300

Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m)
Note: 1. Repetitive rating: pulse width limited by junction temperature.
2 . V DD =50V,L=0.7mH,I AS =28A,R G =25Ω, T J =175˚C
3 . I SD ≤ 28A, di/dt ≤ 380 A/µs, V DD ≤ V (BR)DSS , T J ≤ 175°C.

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 SEMICONDUCTOR IRF3710 Series RoHS
RoHS
Nell High Power Products

THERMAL RESISTANCE
SYMBOL PARAMETER Min. Typ. Max. UNIT
Rth(j-c) Thermal resistance, junction to case 0.75
Rth(c-s) Thermal resistance, case to heatsink 0.5 ºC/W
Rth(j-a) Thermal resistance, junction to ambient 62

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT

STATIC

V(BR)DSS Drain to source breakdown voltage V GS = 0V, I D = 250µA 100 V

▲V (BR)DSS/▲T J Breakdown voltage temperature coefficient I D = 1mA, referenced to 25°C 0.13 V/ºC
V DS =100V, V GS =0V T C = 25°C 25
I DSS Drain to source leakage current μA
V DS =80V, V GS =0V T C =150°C 250
Gate to source forward leakage current V GS = 20V, V DS = 0V 100
I GSS nA
Gate to source reverse leakage current V GS = - 20V, V DS = 0V -100
R DS(ON) Static drain to source on-state resistance V GS = 10V, l D = 28A (Note 1) 0.023 Ω
V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 2 4 V
g fS Forward transconductance V DS =25V, I D =28A 32 S

DYNAMIC

C ISS Input capacitance 3130

C OSS Output capacitance V DS = 25V, V GS = 0V, f =1MHz 410 pF
C RSS Reverse transfer capacitance 72
t d(ON) Turn-on delay time 12
tr Rise time V DD = 50V, I D = 28A 58
V GS = 10V, R G =2.5Ω (Note 1) ns
t d(OFF) Turn-off delay time 45
tf Fall time 47
LD Internal drain inductance Between lead, 6mm from 4.5
nH
LS Internal source inductance package and center of die 7.5
QG Total gate charge 130
Q GS Gate to source charge V DS = 80V, V GS = 10V, I D = 28A 26 nC
Q GD Gate to drain charge (Miller charge) 43

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT
VSD Diode forward voltage I SD = 28A, V GS = 0V 1.2 V
I s (I SD ) Continuous source to drain current Integral reverse P-N junction 57
diode in the MOSFET
D (Drain)

A
I SM Pulsed source current 230
G
(Gate)

S (Source)

t rr Reverse recovery time I SD = 28A, V GS = 0V, 140 220 ns

dI F /dt = 100A/µs
Q rr Reverse recovery charge 670 1010 nC
t ON Forward turn-on time Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)

Note: 1. Pulse test: Pulse width ≤ 400μs, duty cycle ≤ 2% .

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 SEMICONDUCTOR IRF3710 Series RoHS
RoHS
Nell High Power Products

ORDERING INFORMATION SCHEME

IRF 3710 A

MOSFET series
N-Channel, IR series

Current & Voltage rating, lD & VDS

57A / 100V

Package type
A = TO-220AB

Fig.1 Typical output characteristics, Fig.2 Typical output characteristics,

T C =25°C T C =150°C

1000 1000
V GS V GS
Top: 16V Top: 16V
10V 10V
Drain Current, l D (Amps)
Drain Current,l D (Amps)

7.0V 7.0V
6.0V 6.0V
100 5.0V 100 5.0V
4.5V 4.5V
4.0V 4.0V
Bottorm: 3.5V Bottorm: 3.5V

10 10

3.5V
3.5V
1 1
20µs pulse width 20µs pulse width
T C =25°C T J =175°C
0.1 0.1
0.1 1 10 100 0.1 1 10 100

Drain-to-Source voltage , V DS (volts) Drain-to-Source voltage , V DS (volts)

Fig.3 Typical transfer characteristics Fig.4 Normalized On-Resistance vs. Temperature

1000 3
Drain-to-Source on resistance, R DS(on)

l D =57A
2.5
Drain Current, l D (Amps)

100 T J =175°C

2
(Normalized)

10 1.5

T J =25 °C 1
1
V DS =15V 0.5
20µs pulse width
0.10 0
3 4 5 6 7 8 9 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

Gate-to-Source voltage , V GS (volts) Junction Temperature,T J (°C)

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 SEMICONDUCTOR IRF3710 Series RoHS
RoHS
Nell High Power Products

Fig.5 Typical capacitance vs. Drain-to-Source Fig.6 Typical source-drain diode forward
voltage voltage

100000 20
V GS = 0V, f =1MHZ
C iss = C gs +C gd ( C ds = shorted )
C rss = C gd 16

Reverse drain current,I SD (A)

10000 C oss = C ds +C gd
Capacitance, (pF)

Ciss 12

1000
Coss 8 T J =175°C
T J =25°C
100 Crss
4

V GS = 0V
0 0
1 10 100 0.0 0.5 1 1.5 2

Drain-to-Source voltage , V DS (volts)

Source-to-drain voltage, V SD (volts)

Fig.7 Typical gate charge vs. gate-to-source Fig.8 Maximum safe operating area
voltage

12 1000
Gate-to-source voltage , V GS (volts)

Operation in This Area is Limited by R DS(ON)

l D = 28A V DS = 80V
Drain current , l D (Amps)

V DS = 50V
10 V DS = 20V 100

7 100µs

10
1ms
5

1 Note: 10ms
2 1. T C = 25°C
2. T J = 175°C
3. Single Pulse

0 0.1
0 20 40 60 80 100 1 10 100 1000

Total gate charge , Q G (nC) Drain-to-Source voltage, V DS (volts)

Fig.9 Maximum drain current vs.

Case temperature
60
Drain Current , l D (Amps)

50

40

30

20

10

0
25 50 75 100 125 150 175

Case temperature, T C ( ° C)

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 SEMICONDUCTOR IRF3710 Series RoHS
RoHS
Nell High Power Products

Fig.10 Maximum effective transient thermal impedance,

Junction-to-Case

1
Thermal response (RthJc)

D = 0.5

0.2

0.1 0.1

0.05 Single pulse

PDM
0.02 (Thermal response)
0.01 t1

Notes: t2

1. Duty factor, D = t1/ t2

2. Peak TJ = PDM * Rth(j-c) +TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1

Rectangular Pulse Duration , t 1 (seconds)

Fig.11a. Switching time test circuit Fig.11b. Switching time waveforms

RD
V DS
V DS
V GS 90%

RG D.U.T. +
- V DD

10V 10%
Pulse width ≤ 1µs V GS
Duty Factor ≤ 0.1%
t d(ON) t d(OFF)
tR
tF

Fig.12a. Unclamped lnductive test circuit Fig.12b. Unclamped lnductive waveforms

15V

BV DSS

l AS
DRIVER
L
V DS
l D(t)
V DS(t)
RG D.U.T. + V DD
V
- DD
l AS A
20V

tP 0.01Ω Time
tp

Vary t p to obtain required I AS

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 SEMICONDUCTOR IRF3710 Series RoHS
RoHS
Nell High Power Products

Fig.12c. Maximum avalanche energy vs.

Drain current

550
lD

Single pulse energy, E AS (mJ)

TOP 110A
440 20A
BOTTOM 28A

330

220

110

0
25 50 75 100 125 150 175

Starting Junction temperature, T J (°C)

Fig.13a. Basic gate charge waveform Fig.13b. Gate charge test circuit

Current Regulator
Same Type as D.U.T.
V GS

50KΩ
QG
12V 0.2µF
10V
0.3µF

Q GD
+
Q GS V DS
D.U.T. -

V GS

3mA

RG RD
Charge
Current Sampling Resistors

Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET

Driver Gate Drive

D.U.T. Period D=
P.W.
+ Circuit Layout Considerations P.W. Period
• Low Stray lnductance
• Ground Plane VGS=10V *
• Low Leakage lnductance
Current Transformer
-
D.U.T. I SD Waveform
+
Reverse
Recovery Body Diode Forward
Current Current
- + di/dt
-
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
• dv/dt controlled by R G Voltage
RG + Body Diode Forward Drop
• Driver same type as D.U.T.
• l SD controlled by Duty Factor " D " V DD Inductor Curent
-
• D.U.T. -Device Under Test
Ripple ≤ 5% ISD

*V GS = 5V for Logic Level Devices and 3V for drive devices

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 SEMICONDUCTOR IRF3710 Series RoHS
RoHS
Nell High Power Products

Case Style

TO-220AB
10.54 (0.415) MAX.

9.40 (0.370) 3.91 (0.154) 4.70 (0.185)

9.14 (0.360) 3.74 (0.148) 4.44 (0.1754)
1.39 (0.055)
2.87 (0.113)
1.14 (0.045)
2.62 (0.103)

3.68 (0.145)
3.43 (0.135)
16.13 (0.635) 15.32 (0.603)
15.87 (0.625) 14.55 (0.573)
PIN 8.89 (0.350)
1 2 3 8.38 (0.330)
4.06 (0.160) 29.16 (1.148)
3.56 (0.140) 28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045) 14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095) 0.90 (0.035)
2.65 (0.104) 0.70 (0.028) D (Drain)
5.20 (0.205) 0.56 (0.022)
2.45 (0.096)
4.95 (0.195) 0.36 (0.014)

G
(Gate)

S (Source)
All dimensions in millimeters(inches)

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