SM4802DSK ®

Dual N-Channel Enhancement Mode MOSFET

Features Pin Description

· 30V/11.2A,
D1
D1
D2
D2
RDS(ON)= 9mW(max.) @ VGS= 10V
RDS(ON)= 12mW(max.) @ VGS= 4.5V
· Reliable and Rugged S1
G1
S2
· Lead Free and Green Devices Available G2

(RoHS Compliant) Top View of SOP-8

· 100% UIS Tested
D1 D1 D2 D2

Applications G1 G2

· Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems. S1 S2

N-Channel MOSFET

Ordering and Marking Information

SM4802DS Package Code
K : SOP-8
Assembly Material Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Handling Code
Temperature Range TR : Tape & Reel (2500ea/reel)
Package Code Assembly Material
G : Halogen and Lead Free Device

SM4802DS K : 4802 XXXXX - Lot Code

XXXXX

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright ã Sinopower Semiconductor, Inc. 1 www.sinopowersemi.com

Rev. A.2 - November, 2013
SM4802DSK ®

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage 30
V
VGSS Gate-Source Voltage ±20
TA=25°C 11.2
IDa Continuous Drain Current (VGS=10V)
TA=70°C 9
IDMa 300ms Pulsed Drain Current (V GS=10V) 40 A
ISa Diode Continuous Forward Current 1
b
I AS Avalanche Current (Single Pulse) 13
b
EAS Avalanche Energy, Single Pulse (L=0.5mH) 42.25 mJ
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
TA=25°C 1.7
P Da Maximum Power Dissipation W
TA=70°C 1.08

a t £ 10s 48
RqJA Thermal Resistance-Junction to Ambient
Steady State 74 °C/W
R qJL Thermal Resistance-Junction to Lead Steady State 32
2
Note a：Surface Mounted on 1in pad area, t £ 10sec.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25 oC).

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

SM4802DSK
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage V GS=0V, ID S=250mA 30 - - V
V DS=24V, V GS=0V - - 1
ID SS Zero Gate Voltage Drain Current mA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage V DS=V GS, IDS =250mA 1.3 1.8 2.5 V
IGSS Gate Leakage Current V GS=±20V, VDS=0V - - ±100 nA
V GS=10V, IDS=15A - 7.5 9
RD S(ON) a Drain-Source On-state Resistance mW
V GS=4.5V, I DS=10A - 9.3 12
Gfs Forward Transconductance V DS=3V, IDS =10A - 40 - S
Diode Characteristics
V SDa Diode Forward Voltage ISD =15A, V GS=0V - 0.75 1.1 V
b
trr Reverse Recovery Time - 14 - ns
b ISD =15A, dl SD /dt=100A/ms
Qrr Reverse Recovery Charge - 4.5 - nC

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Rev. A.2 - November, 2013
SM4802DSK ®

Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)

SM4802DSK
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Dynamic Characteristics b
RG Gate Resistance V GS=0V,V DS=0V,F=1MHz 0.7 1 1.5 W
Ciss Input Capacitance V GS=0V, 1000 1180 1400
Coss Output Capacitance V DS=15V, 160 190 220 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 90 115 140
td(ON) Turn-on Delay Time - 8 14
tr Turn-on Rise Time V DD =15V, R L =15W, - 10 17
I DS=1A, VGEN =10V, ns
t d(OFF) Turn-off Delay Time R G=6W - 27 42
tf Turn-off Fall Time - 8 12
b
Gate Charge Characteristics
V DS=15V, VGS=10V,
Total Gate Charge - 20 26
Qg I DS=15A
Total Gate Charge - 9.5 -
nC
Qgth Threshold Gate Charge V DS=15V, VGS=4.5V, - 1.9 -
Qgs Gate-Source Charge I DS=15A - 4 -
Q gd Gate-Drain Charge - 3.5 -
Note a : Pulse test ; pulse width £ 300 ms, duty cycle £ 2%.
Note b : Guaranteed by design, not subject to production testing.

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Rev. A.2 - November, 2013
SM4802DSK ®

Typical Operating Characteristics

Power Dissipation Drain Current

2.0 14

12
1.6
10

ID - Drain Current (A)

Ptot - Power (W)

1.2
8

6
0.8

4
0.4
2
o
T A=25 C
o
TA=25 C,VG=10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature

Safe Operation Area Thermal Transient Impedance

300 2
Normalized Transient Thermal Resistance

100 1 Duty = 0.5

0.2
it
im
ID - Drain Current (A)

)L

0.1
on

10
s(

0.05
Rd

300ms
0.1
0.02
1ms
1 0.01
10ms

100ms 0.01
Single Pulse
0.1 1s
DC
2
Mounted on 1in pad
o
TA=25 C o
RqJA :48 C/W
0.01 1E-3
0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 30

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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Rev. A.2 - November, 2013
SM4802DSK ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

40 16
VGS=3.5,4,5,6,7,8,9,10V
35 14

RDS(ON) - On - Resistance (mW)

30
12
ID - Drain Current (A)

25
10 VGS=4.5V

20
3V
8 VGS=10V
15

6
10

5 4
2.5V
0 2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 8 16 24 32 40

VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

30 1.6
IDS=15A IDS =250mA
1.4
25
RDS(ON) - On - Resistance (mW)

Normalized Threshold Voltage

1.2
20

1.0
15
0.8

10
0.6

5
0.4

0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright ã Sinopower Semiconductor, Inc. 5 www.sinopowersemi.com

Rev. A.2 - November, 2013
SM4802DSK ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0 40
VGS = 10V
1.8 IDS = 15A

1.6 10
Normalized On Resistance

IS - Source Current (A)

o
1.4 Tj=150 C

1.2

1.0 Tj=25 C
o

1
0.8

0.6

0.4
o
RON@Tj=25 C: 7.5mW
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1600 10
Frequency=1MHz VDS= 15V
9
1400 IDS= 15A
8
VGS - Gate-source Voltage (V)

1200 Ciss
7
C - Capacitance (pF)

1000
6

800 5

4
600
3
400
2
Crss Coss
200
1

0 0
0 5 10 15 20 25 30 0 4 8 12 16 20

VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)

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Rev. A.2 - November, 2013
SM4802DSK ®

Typical Operating Characteristics (Cont.)

Transfer Characteristics
50

40
ID - Drain Current (A)

30

20

o
Tj=125 C o
Tj=-55 C
10 o
Tj=25 C

0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS - Gate-Source Voltage (V)

Copyright ã Sinopower Semiconductor, Inc. 7 www.sinopowersemi.com

Rev. A.2 - November, 2013
SM4802DSK ®

Avalanche Test Circuit and Waveforms

VDS VDSX(SUS)
L tp

VDS
DUT
IAS

RG
VDD
VDD
EAS
tp IL
0.01W
tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD

10%
tp VGS
td(on) tr td(off) tf

Copyright ã Sinopower Semiconductor, Inc. 8 www.sinopowersemi.com

Rev. A.2 - November, 2013
SM4802DSK ®

Package Information
SOP-8

-T- SEATING PLANE < 4 mils

D

SEE VIEW A
E1

°
h X 45

e b c
A2

0.25
A

GAUGE PLANE
SEATING PLANE
A1

L
VIEW A

S
Y
SOP-8 RECOMMENDED LAND PATTERN
M MILLIMETERS INCHES 1.27
B
O
L MIN. MAX. MIN. MAX.
A - 1.75 - 0.069
A1 0.10 0.25 0.004 0.010
A2 1.25 - 0.049 -
2.2
b 0.31 0.51 0.012 0.020
c 0.17 0.25 0.007 0.010
D 4.80 5.00 0.189 0.197 5.74
E 5.80 6.20 0.228 0.244
E1 3.80 4.00 0.150 0.157 2.87
e 1.27 BSC 0.050 BSC
h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050 0.8
0 0° 8° 0° 8° 0.635
UNIT: mm
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.

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Rev. A.2 - November, 2013
SM4802DSK ®

Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 A
OD1 B
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F
330.0± 12.4+2.00 13.0+0.50
2.00 50 MIN. -0.00 -0.20 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05
SOP-8 P0 P1 P2 D0 D1 T A0 B0 K0
4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 1.5 MIN. 0.6+0.00 6.40±0.20 5.20±0.20 2.10±0.20
-0.00 -0.40
(mm)

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Rev. A.2 - November, 2013
SM4802DSK ®

Taping Direction Information

SOP-8

USER DIRECTION OF FEED

Classification Profile

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Rev. A.2 - November, 2013
SM4802DSK ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

3 3
Package Volume mm Volume mm
Thickness <350 ³350
<2.5 mm 235 °C 220 °C
³2.5 mm 220 °C 220 °C

Table 2. Pb-free Process – Classification Temperatures (Tc)

Package Volume mm 3 Volume mm3 Volume mm 3
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
³2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax
HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050

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Rev. A.2 - November, 2013