SM4513NHKP ®

N-Channel Enhancement Mode MOSFET

Features Pin Description

· 30V/70A,
D D
RDS(ON)= 2.7mW (Max.) @ VGS=10V D D
RDS(ON)= 3.5mW (Max.) @ VGS=4.5V
· Reliable and Rugged G
S Pin 1
· Lower Qg and Qgd for high-speed switching S S

· Lower RDS(ON) to Minimize Conduction Losses DFN5x6A-8_EP

· 100% UIS + Rg Tested (5,6,7,8)

DD DD
· Lead Free and Green Devices Available
(RoHS Compliant)

Applications (4) G

· Power Management in Desktop Computer or

DC/DC Converters.
· Power Load Switch. S S S
( 1, 2, 3 )
· Notebook Battery Management.
N-Channel MOSFET

Ordering and Marking Information

SM4513NH Package Code
KP : DFN5x6A-8_EP
Assembly Material Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Handling Code
Temperature Range TR : Tape & Reel
Package Code Assembly Material
G : Halogen and Lead Free Device

SM4513NH KP : 4513NH XXXXX - Lot Code

XXXXX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright ã Sinopower Semiconductor, Inc. 1 www.sinopowersemi.com

Rev. A.2 - April, 2016
SM4513NHKP ®

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Rating Unit

Common Ratings
VDSS Drain-Source Voltage 30
V
V GSS Gate-Source Voltage ±12
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
IS Diode Continuous Forward Current TC =25°C 20

a
TC =25°C 70*
ID Continuous Drain Current A
TC =100°C 67
b
IDM Pulsed Drain Current TC =25°C 140
TC =25°C 46.3
PD Maximum Power Dissipation W
TC =100°C 18.5
RqJ C Thermal Resistance-Junction to Case Steady State 2.7 °C/W
IDM b Pulsed Drain Current TA=25°C 91
TA=25°C 22.7 A
ID c Continuous Drain Current
TA=70°C 18.1
TA=25°C 2.08
PD c Maximum Power Dissipation W
TA=70°C 1.3
t £ 10s 24
RqJA c Thermal Resistance-Junction to Ambient °C/W
Steady State 60
IAS d Avalanche Current, Single pulse L=0.1mH 29 A
EAS d
Avalanche Energy, Single pulse L=0.1mH 42 mJ
Note a,*：Max. continue current is limited by bonding wire.
Note b：Pulse width is limited by max. junction temperature.
Note c：RqJA steady state t=999s.
Note d：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj= 25oC).

Copyright ã Sinopower Semiconductor, Inc. 2 www.sinopowersemi.com

Rev. A.2 - April, 2016
SM4513NHKP ®

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V
Drain-Source Breakdown Voltage VGS=0V, ID(aval)=29A,
BVDSSt 34 - - V
(transient) Tcase=25°C, ttransient=100ns

VDS =24V, VGS=0V - - 1

IDSS Zero Gate Voltage Drain Current mA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS =VGS, IDS=250mA 1.2 1.5 1.9 V
IGSS Gate Leakage Current VGS=±12V, V DS=0V - - ±100 nA
VGS=10V, IDS=20A - 2.2 2.7
e
RDS(ON) Drain-Source On-state Resistance TJ=125°C - 3.2 - mW
VGS=4.5V, I DS=12A - 2.9 3.5
Gfs Forward Transconductance VDS =10V, IDS=5A - 33 - S
Diode Characteristics
VSD e Diode Forward Voltage ISD=20A, VGS=0V - 0.8 1.1 V
trr Reverse Recovery Time - 31 -
ta Charge Time - 18 - ns
ISD=20A, dlSD/dt=100A/ms
tb Discharge Time Vdd=15V - 13 -
Q rr Reverse Recovery Charge - 20 - nC
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1 2.2 W
Ciss Input Capacitance - 1900 -
VGS=0V,
Coss Output Capacitance VDS =15V, - 750 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 75 -
td(ON) Turn-on Delay Time - 14.2 -
tr Turn-on Rise Time VDD=15V, RL=15W, - 10.6 -
IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time RG=1W - 32 -
tf Turn-off Fall Time - 15.6 -
Gate Charge Characteristics
VDS =15V, VGS=10V,
Qg Total Gate Charge - 30 45
IDS=20A
Qg Total Gate Charge - 14 -
Q gth Threshold Gate Charge - 1.73 - nC
VDS =15V, VGS=4.5V,
Qgs Gate-Source Charge IDS=20A - 2.54 -
Q gd Gate-Drain Charge - 4.63 -
Note e：Pulse test ; pulse width£300ms, duty cycle£2%.

Copyright ã Sinopower Semiconductor, Inc. 3 www.sinopowersemi.com

Rev. A.2 - April, 2016
SM4513NHKP ®

Typical Operating Characteristics

Power Dissipation Drain Current

50 75

40 60

ID - Drain Current (A)

Ptot - Power (W)

30 45

20 30

10 15

o o
TC=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C) Tj - Junction Temperature

Safe Operation Area Thermal Transient Impedance

300 3
Normalized Transient Thermal Resistance

1 Duty = 0.5
100
it

0.2
im

100ms
n)L

0.1
ID - Drain Current (A)

(o
s
Rd

300ms 0.1 0.05

10 0.02

0.01
1ms 0.01

1
1E-3
10ms Single Pulse
o o
TC=25 C RqJC :2.7 C/W
DC
0.1 1E-4
0.01 0.1 1 10 100 1E-6 1E-5 1E-4 1E-3 0.01 0.1
VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright ã Sinopower Semiconductor, Inc. 4 www.sinopowersemi.com

Rev. A.2 - April, 2016
SM4513NHKP ®

Typical Operating Characteristics (Cont.)

Safe Operation Area Thermal Transient Impedance

300 2

Normalized Transient Thermal Resistance

100 1 Duty = 0.5
it
m
) Li
on 0.2
s(
Rd 0.1
ID - Drain Current (A)

10 0.05
300ms
0.1
0.02
1ms
1 0.01

10ms
0.01
Single Pulse
0.1
100ms
2
Mounted on 1in pad
O
TA=25 C DC o
RqJA :60 C/W
1s
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100 1000
VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Output Characteristics Drain-Source On Resistance

140 6
VGS=3.5,4,5,6,7,8,9,10V
120
5
RDS(ON) - On - Resistance (mW)

3V
100
ID - Drain Current (A)

80
VGS=4.5V
3
60

2
VGS=10V
40 2.5V

20 1

2V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120
VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Copyright ã Sinopower Semiconductor, Inc. 5 www.sinopowersemi.com

Rev. A.2 - April, 2016
SM4513NHKP ®

Typical Operating Characteristics (Cont.)

Gate-Source On Resistance Gate Threshold Voltage

14 1.6
IDS=20A IDS =250mA

12 1.4
RDS(ON) - On - Resistance (mW)

Normalized Threshold Voltage

10 1.2

8 1.0

6 0.8

4 0.6

2 0.4

0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Drain-Source On Resistance Source-Drain Diode Forward

2.0 100
VGS = 10V
1.8 IDS = 20A
Normalized On Resistance

1.6
IS - Source Current (A)

o
Tj=150 C
10
1.4

1.2 o
Tj=25 C

1.0
1
0.8

0.6
o
RON@Tj=25 C: 2.2mW
0.4 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Copyright ã Sinopower Semiconductor, Inc. 6 www.sinopowersemi.com

Rev. A.2 - April, 2016
SM4513NHKP ®

Typical Operating Characteristics (Cont.)

Capacitance Gate Charge

2400 10
Frequency=1MHz VDS =15V
9
IDS =20A
2000
8

VGS - Gate-source Voltage (V)

Ciss

7
C - Capacitance (pF)

1600
6

1200 5

4
Coss
800
3

2
400
Crss 1

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)

Transfer Characteristics
120

100
ID - Drain Current (A)

80

60

40
o
Tj=125 C o
Tj=25 C
20

0
0 1 2 3 4 5

VGS - Gate-Source Voltage (V)

Copyright ã Sinopower Semiconductor, Inc. 7 www.sinopowersemi.com

Rev. A.2 - April, 2016
SM4513NHKP ®

Avalanche Test Circuit and Waveforms

VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD

VDD
tp IL EAS
0.01W

tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD

10%
tp VGS
td(on) tr td(off) tf

Copyright ã Sinopower Semiconductor, Inc. 8 www.sinopowersemi.com

Rev. A.2 - April, 2016
SM4513NHKP ®

Disclaimer

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making

great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.

All information which is shown in the datasheet is based on Sinopower’s

research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.

In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.

The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.

The products are not designed or manufactured to be used with any

equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.

Copyright ã Sinopower Semiconductor, Inc. 9 www.sinopowersemi.com

Rev. A.2 - April, 2016
SM4513NHKP ®

Classification Profile

Copyright ã Sinopower Semiconductor, Inc. 10 www.sinopowersemi.com

Rev. A.2 - April, 2016
SM4513NHKP ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package Volume mm 3 Volume mm 3
Thickness <350 ³350
<2.5 mm 235 °C 220 °C
³2.5 mm 220 °C 220 °C

Table 2. Pb-free Process – Classification Temperatures (Tc)

3 3 3
Package Volume mm Volume mm Volume mm
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
³2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax
HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080

Copyright ã Sinopower Semiconductor, Inc. 11 www.sinopowersemi.com

Rev. A.2 - April, 2016