APM6006NFP

N-Channel Enhancement Mode MOSFET

Features Pin Description

SD
• 60V/34A, G

RDS(ON)=21mΩ (typ.) @ VGS=10V

RDS(ON)=29mΩ (typ.) @ VGS=4.5V
• Reliable and Rugged
Top View of TO-220-FP
• Lead Free and Green Devices Available
D
(RoHS Compliant)

Applications G

• Power Management in LED, DC/DC Converter,

DC/AC Inverter Systems. S

N-Channel MOSFET

Ordering and Marking Information

APM6006N Package Code

FP : TO-220-FP
Assembly Material Operating Junction Temperature Range
Handling Code C : -55 to 150 oC
Handling Code
Temperature Range TU : Tube
Assembly Material
Package Code G : Halogen and Lead Free Device

APM6006N FP : APM6006N XXXXX - Date Code

XXXXX

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. A.1 - Dec., 2009

This datasheet has been downloaded from http://www.digchip.com at this page

APM6006NFP

Absolute Maximum Ratings

Symbol Parameter Rating Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 60
V
VGSS Gate-Source Voltage ±25
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
IS Diode Continuous Forward Current TC=25°C 20 A
Mounted on Large Heat Sink
TC=25°C 136
IDP 300µs Pulse Drain Current Tested A
TC=100°C 88
TC=25°C 34
ID Continuous Drain Current A
TC=100°C 22
TC=25°C 50
PD Maximum Power Dissipation W
TC=100°C 20
RθJC Thermal Resistance-Junction to Case 2.5
°C/W
RθJA Thermal Resistance-Junction to Ambient 62.5

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

APM6006NFP
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 60 - - V
VDS=48V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1 2 3 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA

a Drain-Source On-state Resistance VGS=10V, IDS=20A - 21 26

RDS(ON) mΩ
Drain-Source On-state Resistance VGS=4.5V, IDS=10A - 29 38
Diode Characteristics
a
VSD Diode Forward Voltage ISD=20A, VGS=0V - 0.85 1.1 V
trr Reverse Recovery Time - 36 - ns
ISD=20A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge - 41 - nC

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Rev. A.1 - Dec., 2009
APM6006NFP

Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)

APM6006NFP
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
b
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 0.7 - Ω
Ciss Input Capacitance - 1500 -
VGS=0V,
Coss Output Capacitance VDS=30V, - 150 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 90 -
td(ON) Turn-on Delay Time - 11 22
Tr Turn-on Rise Time VDD=30V, RL=30Ω, - 10 20
IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time RG=6Ω - 35 64
Tf Turn-off Fall Time - 10 20
b
Gate Charge Characteristics
Qg Total Gate Charge - 38 54
VDS=30V, VGS=10V,
Qgs Gate-Source Charge - 8.2 - nC
IDS=20A
Qgd Gate-Drain Charge - 10 -
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.

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Rev. A.1 - Dec., 2009
APM6006NFP

Typical Operating Characteristics

Power Dissipation Drain Current

60 40

35
50
30

ID - Drain Current (A)

40
Ptot - Power (W)

25

30 20

15
20
10
10
5
o o
TC=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature

Safe Operation Area Thermal Transient Impedance

300 2
Normalized Transient Thermal Resistance

100 1
Duty = 0.5
it
im
n)L
s(o
ID - Drain Current (A)

Rd 300µs 0.2
1ms
0.1
10
10ms
100ms 0.05
0.1
1s
0.02
1
DC
0.01

Single Pulse Mounted on minimum pad

o o
TC=25 C RθJA : 62.5 C/W
0.1 0.01
0.1 1 10 100200 1E-4 1E-3 0.01 0.1 1 10 100

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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Rev. A.1 - Dec., 2009
APM6006NFP

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

80 50
VGS= 6,7,8,9,10V
70 5V 45

RDS(ON) - On - Resistance (mΩ)

60 40
VGS=4.5V
ID - Drain Current (A)

50 35
4.5V
40 30

30 25 VGS=10V

20 4V 20

10 15
3.5V

0 10
0 1 2 3 4 5 0 10 20 30 40 50 60
VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

60 1.8
IDS=20A IDS =250µA
55 1.6
RDS(ON) - On - Resistance (mΩ)

Normalized Threshold Voltage

50 1.4

45 1.2

40 1.0

35 0.8

30 0.6

25 0.4

20 0.2

15 0.0
3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.1 - Dec., 2009
APM6006NFP

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

1.8 100
VGS = 10V
1.6 IDS = 20A
Normalized On Resistance

1.4

IS - Source Current (A)

o
Tj=150 C
10
1.2
o
Tj=25 C
1.0

0.8
1
0.6

0.4
o
RON@Tj=25 C: 21mΩ
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5
Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

2100 10
Frequency=1MHz VDS= 30V
9
1800 IDS= 20A
VGS - Gate-source Voltage (V)

8
1500 Ciss
C - Capacitance (pF)

6
1200
5
900
4

600 3

2
300
Crss Coss 1

0 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40
VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)

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Rev. A.1 - Dec., 2009
APM6006NFP

Avalanche Test Circuit and Waveforms

VDS
L
VDSX(SUS)
tp
DUT
VDS

IAS
RG
VDD

VDD
tp IL
EAS
0.01Ω

tAV

Switching Time Test Circuit and Waveforms

VDS
RD

DUT VDS
90%
VGS
RG
VDD

tp
10%
VGS
td(on) tr td(off) tf

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Rev. A.1 - Dec., 2009
APM6006NFP

Package Information
TO-220-FP

E A
A1
φP

d1
d2
D
L1
L

b e c A2
b2

S TO-220FP
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 4.20 4.80 0.165 0.189
A1 2.60 3.20 0.102 0.126
A2 2.10 2.90 0.083 0.114
b 0.50 1.00 0.020 0.039
b2 0.90 1.90 0.035 0.075
c 0.30 0.80 0.012 0.031
D 8.10 9.10 0.319 0.358
d1 14.50 16.50 0.571 0.650
d2 12.10 12.90 0.476 0.508
E 9.70 10.70 0.382 0.421
e 2.54 BSC 0.100 BSC
L 13.00 14.50 0.512 0.570
L1 1.60 4.00 0.063 0.157
P 3.00 3.60 0.118 0.142

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APM6006NFP

Devices Per Unit

Package Type Unit Quantity

TO-220-FP Tube 50

Classification Profile

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Rev. A.1 - Dec., 2009
APM6006NFP

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
3 3
Package Volume mm Volume mm
Thickness <350 ≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
3 3 3
Package Volume mm Volume mm Volume mm
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

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Rev. A.1 - Dec., 2009
APM6006NFP

Customer Service

Anpec Electronics Corp.

Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

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