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-30V/-90A
RDS(ON)= 4.8mΩ(typ.)@VGS = 10V
RDS(ON)= 6.5mΩ(typ.)@VGS = 4.5V
Applications
Package Code
D U V D: TO-252-2L U: TO-251-3L V:TO-251-3S
HY19P03 HY19P03 HY19P03
YYXXXJWW G YYXXXJWW G YYXXXJWW G Date Code Assembly Material
YYXXX WW G:Halogen Free
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
nation finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and Advise
customers to obtain the latest version of relevant information to verify before placing orders.
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HY19P03 D/U/V
Absolute Maximum Ratings
HY19P03
Symbol Parameter Test Conditions Unit
Min Typ Max
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V,IDS=250uA -30 - - V
VDS=-30V, VGS=0V - - -1 uA
IDSS Drain-to-Source Leakage Current
TJ=55°C - - -10 uA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250uA -1.0 -1.7 -3.0 V
IGSS Gate-Source Leakage Current VGS=±20V,VDS=0V - - ±100 nA
VGS=-10V,ID= -45A - 4.8 6 mΩ
RDS(ON)* Drain-Source On-state Resistance
VGS=-4.5V,ID= -45A 6.4 8 mΩ
Diode Characteristics
VSD* Diode Forward Voltage ISD= -45A,VGS=0V - -0.82 -1.3 V
trr Reverse Recovery Time - 25 - ns
ISD= -45A,dI/dt=100A/us
Qrr Reverse Recovery Charge - 20 - nC
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HY19P03 D/U/V
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HY19P03
Symbol Parameter Test Conditions Unit
Min Typ Max
Dynamic Characteristics
VGS=0V,VDS=0V,F=1
RG Gate Resistance - 3.5 - Ω
MHz
Ciss Input Capacitance VGS=0V, - 4787 -
Coss Output Capacitance VDS=-15V, - 461 - pF
Crss Reverse Transfer Capacitance Frequency=1.0MHz - 329 -
td(ON) Turn-on Delay Time - 12 -
Tr Turn-on Rise Time VDD= -15V,RG=3Ω, - 16 -
ns
td(OFF) Turn-off Delay Time IDS= -45A,VGS=10V - 75 -
Tf Turn-off Fall Time - 37 -
Gate Charge Characteristics
Qg Total Gate Charge - 90 -
VDS = -24V, VGS= -10V,
Qgs Gate-Source Charge - 7.6 - nC
ID= -45A,
Qgd Gate-Drain Charge - 19 -
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HY19P03 D/U/V
Typical Operating Characteristics
-ID-Drain Current(A)
Voltage
Tc-Case Temperature(℃) Tc-Case Temperature(℃)
Impedance
Voltage
Thermal
Zθ jc
Voltage
Voltage
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HY19P03 D/U/V
Voltage
Tj-Junction Temperature (℃) -VSD-Source-Drain Voltage(V)
Voltage
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HY19P03 D/U/V
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HY19P03 D/U/V
Device Per Unit
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN NOM MAX
A 2.20 2.30 2.40
A1 0.00 - 0.20
A2 0.97 1.07 1.17
b 0.68 0.78 0.90
b3 5.20 5.33 5.50
c 0.43 0.53 0.63
D 5.98 6.10 6.22
D1 5.30REF
E 6.40 6.60 6.80
E1 4.63 - -
e 2.286BSC
H 9.40 10.10 10.50
L 1.38 1.50 1.75
L1 2.90REF
L2 0.51BSC
L3 0.88 - 1.28
L4 - - 1.00
L5 1.65 1.80 1.95
θ 0° - 8°
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HY19P03 D/U/V
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN NOM MAX
A 2.20 2.30 2.40
A2 0.97 1.07 1.17
b 0.68 0.78 0.90
b2 0.00 0.04 0.10
b2' 0.00 0.04 0.10
b3 5.20 5.33 5.50
c 0.43 0.53 0.63
D 5.98 6.10 6.22
D1 5.30REF
E 6.40 6.60 6.80
E1 4.63 - -
e 2.286BSC
H 16.22 16.52 16.82
L1 9.15 9.40 9.65
L3 0.88 1.02 1.28
L5 1.65 1.80 1.95
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HY19P03 D/U/V
TO-251-3S
COMMON DIMENSIONS
mm
SYMBOL
MIN NOM MAX
A 2.20 2.30 2.40
A2 0.97 1.07 1.17
b 0.68 0.78 0.90
b3 5.20 5.33 5.50
c 0.43 0.53 0.63
D 5.98 6.10 6.22
D1 5.30REF
E 6.40 6.60 6.80
E1 4.63 - -
e 2.286BSC
H 10.00 11.22 11.44
L1 3.90 4.10 4.30
L3 0.88 1.02 1.28
L5 1.65 1.80 1.95
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HY19P03 D/U/V
Classification Profile
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HY19P03 D/U/V
Customer Service
Worldwide Sales and Service: sales@hooyi.cc
Technical Support: technical @ hooyi.cc
Xi’an Hooyi Semiconductor Technology Co., Ltd.
No.105, 5th Fengcheng Road, Economic and Technological Development Zone, Xi'an, China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hooyi.cc
Web net: www.hooyi.cc
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