APM4548AK: Features Pin Description

APM4548AK
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features Pin Description

• N-Channel
30V/7A,
RDS(ON) = 18mΩ (typ.) @ VGS = 10V
RDS(ON) = 23mΩ (typ.) @ VGS = 4.5V
• P-Channel
-30V/-6A, Top View of SOP − 8
RDS(ON) = 32mΩ (typ.) @ VGS =-10V
RDS(ON) = 42mΩ (typ.) @ VGS =-4.5V (8) (7) (6) (5)
• Super High Dense Cell Design D1 D1 D2 D2
• Reliable and Rugged

• Lead Free and Green Devices Available
(RoHS Compliant)
(2) (4)
Applications G1 G2
• Power Management in Notebook Computer,

S1 S2
Portable Equipment, and Battery Powered (1) (3)
Systems N-Channel MOSFET P-Channel MOSFET
Ordering and Marking Information

APM4548A Package Code
K : SOP-8
Assembly Material Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
Handling Code
Temp. Range TR : Tape & Reel
Package Code Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
APM4548A K : APM4548A
XXXXX XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. A.2 - May., 2008
Free Datasheet http://www.Datasheet4U.com

APM4548AK
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol Parameter N Channel P Channel Unit

VDSS Drain-Source Voltage 30 -30
V
VGSS Gate-Source Voltage ±20 ±20
ID* Continuous Drain Current VGS=10V (N) 7 -6
A
IDM* Pulsed Drain Current VGS=-10V (P) 30 -20
IS* Diode Continuous Forward Current 2.5 -2.5 A
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
TA=25°C 2
PD* Power Dissipation W
TA=100°C 0.8
RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM4548AK
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static Characteristics
Drain-Source Breakdown VGS=0V, IDS=250µA N-Ch 30
BVDSS V
Voltage VGS=0V, IDS=-250µA P-Ch -30
VDS=24V, VGS=0V 1
N-Ch
Zero Gate Voltage Drain TJ=85°C 30
IDSS µA
Current VDS=-24V, VGS=0V -1
P-Ch
TJ=85°C -30
VDS=VGS, IDS=250µA N-Ch 1 1.8 2.5
VGS(th) Gate Threshold Voltage V
VDS=VGS, IDS=-250µA P-Ch -1 -1.8 -2.5
N-Ch ±10
IGSS Gate Leakage Current VGS=±16V, VDS=0V µA
P-Ch ±10
VGS=10V, IDS=7A N-Ch 18 24
a Drain-Source On-State VGS=-10V, IDS=-6A P-Ch 32 42

RDS(ON) mΩ
Resistance VGS=4.5V, IDS=5A N-Ch 23 30
VGS=-4.5V, IDS=-5A P-Ch 42 55

Rev. A.2 - May., 2008

APM4548AK
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM4548AK
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Diode Characteristics
a ISD=2.5A, VGS=0V N-Ch 0.8 1.1
VSD Diode Forward Voltage V
ISD=-2.5A, VGS=0V P-Ch -0.8 -1.1
N-Ch 14
trr Reverse Recovery Time N-Channel ns
ISD=7A, dISD/dt=100A/µs P-Ch 15
P-Channel N-Ch 7
Qrr Reverse Recovery Charge ISD=-6A, dISD/dt=100A/µs nC
P-Ch 7
b
Dynamic Characteristics
N-Ch 3.6
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ω
P-Ch 8
N-Channel N-Ch 990
Ciss Input Capacitance
VGS=0V, P-Ch 1150
VDS=15V,
Frequency=1.0MHz N-Ch 150
Coss Output Capacitance pF
P-Channel P-Ch 150
VGS=0V,
Reverse Transfer VDS=-15V, N-Ch 115
Crss
Capacitance Frequency=1.0MHz P-Ch 105
N-Ch 9 17
td(ON) Turn-on Delay Time N-Channel
P-Ch 8 15
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V, N-Ch 10 19
Tr Turn-on Rise Time
RG=6Ω P-Ch 11 21
ns
P-Channel N-Ch 33 60
td(OFF) Turn-off Delay Time
VDD=-15V, RL=15Ω, P-Ch 49 89
IDS=-1A, VGEN=-10V,
RG=6Ω N-Ch 11 21
Tf Turn-off Fall Time
P-Ch 21 39
b
Gate Charge Characteristics
N-Ch 20 28
Qg Total Gate Charge N-Channel
VDS=15V, VGS=10V, P-Ch 20 28
IDS=7A N-Ch 2.4
Qgs Gate-Source Charge nC
P-Channel P-Ch 2.9
VDS=-15V, VGS=-10V, N-Ch 4.5
Qgd Gate-Drain Charge IDS=-6A
P-Ch 4
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.

Rev. A.2 - May., 2008

APM4548AK
Typical Characteristics
N-Channel
Power Dissipation Drain Current
2.5 8
7
2.0
6
ID - Drain Current (A)

Ptot - Power (W)
5
1.5
1.0
3
2
0.5
1
o o
TA=25 C TA=25 C,VG=10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)
Safe Operation Area Thermal Transient Impedance

100 2
Normalized Transient Thermal Resistance
1
Duty = 0.5
0.2
10
it
Lim
300µs 0.1
n)
s(o
Rd
1ms
0.1 0.05
1 0.02
10ms
0.01
100ms
0.01
0.1 1s Single Pulse
DC
2
Mounted on 1in pad
O o
TA=25 C RθJA : 62.5 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30
VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Rev. A.2 - May., 2008

APM4548AK
Typical Characteristics (Cont.)

N-Channel
Output Characteristics Drain-Source On Resistance
30 50
VGS= 4, 5, 6, 7, 8, 9, 10V
45
25
RDS(ON) - On - Resistance (mΩ)

3.5V 40
20 VGS=4.5V
35
15
VGS=10V
30
10 3V
25
5
20
2.5V
0 15
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30
VDS - Drain-Source Voltage (V) ID - Drain Current (A)
Drain-Source On Resistance Gate Threshold Voltage

70 1.6
ID=7A IDS =250µA
65
1.4
Normalized Threshold Voltage
60
55 1.2
50
1.0
45
0.8
40
35 0.6
30
0.4
25
20 0.2
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Rev. A.2 - May., 2008

APM4548AK

N-Channel
Drain-Source On Resistance Source-Drain Diode Forward
1.8 30
VGS = 10V
1.6 IDS = 7A
Normalized On Resistance
10
o
Tj=150 C
1.4
IS - Source Current (A)

1.2 o
Tj=25 C
1.0
1
0.8
0.6
o
RON@Tj=25 C: 18mΩ
0.4 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0
Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)
Capacitance Gate Charge

1400 10
Frequency=1MHz VDS= 15V
9 I = 7A
1200 D
VGS - Gate - source Voltage (V)
8
1000 Ciss 7
C - Capacitance (pF)
6
800
5
600
4
400 3
2
200 Coss
Crss 1
0 0
0 5 10 15 20 25 30 0 4 8 12 16 20 24
VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Rev. A.2 - May., 2008

APM4548AK

P-Channel
Power Dissipation Drain Current
2.5 7
6
2.0
5
-ID - Drain Current (A)

Ptot - Power (W)
1.5
4
3
1.0
2
0.5
1
o o
TA=25 C TA=25 C,VG=-10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)
Safe Operation Area Thermal Transient Impedance

100 2
Normalized Transient Thermal Resistance
1 Duty = 0.5
0.2
10
it
Lim
300us 0.1
n)
s(o
Rd
1ms 0.1 0.05
0.02
1
10ms
0.01
100ms
0.01
0.1 1s
Single Pulse
DC
2
Mounted on 1in pad
O o
TA=25 C RθJA : 62.5 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30
-VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Rev. A.2 - May., 2008

APM4548AK

P-Channel
Output Characteristics Drain-Source On Resistance
20 65
VGS= -4,-5,-6,-7,-8,-9,-10V
18 60
-3.5V

16 55
14
50 VGS= -4.5V
12
45
10 -3V
40
8
VGS= -10V
35
6
4 30
-2.5V
2 25
0 20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20
-VDS - Drain - Source Voltage (V) -ID - Drain Current (A)
Drain-Source On Resistance Gate Threshold Voltage

90 1.6
IDS = -250µA
ID= -6A
80 1.4
Normalized Threshold Voltage
1.2
70
1.0
60
0.8
50
0.6
40
0.4
30 0.2
20 0.0
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
-VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Rev. A.2 - May., 2008

APM4548AK

P-Channel
Drain-Source On Resistance Source-Drain Diode Forward

1.8 20
VGS = -10V
1.6 IDS = -6A 10
Normalized On Resistance
1.4 o
Tj=150 C
-IS - Source Current (A)

1.2
1.0
o
Tj=25 C
0.8 1
0.6
0.4
0.2
o
RON@Tj=25 C: 32mΩ
0.0 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)
Capacitance Gate Charge

1600 10
Frequency=1MHz VDS= -15V
9 I = -6A
1400 D
-VGS - Gate - source Voltage (V)
8
1200 Ciss
7
C - Capacitance (pF)
1000
6
800 5
4
600
3
400
2
200 Coss
1
Crss
0 0
0 5 10 15 20 25 30 0 4 8 12 16 20 24
-VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Rev. A.2 - May., 2008

APM4548AK
Package Information
SOP-8
D
SEE VIEW A
E1
°
h X 45
e b c
A2
0.25
A
GAUGE PLANE
SEATING PLANE
A1
L
VIEW A
S SOP-8
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 1.75 0.069
A1 0.10 0.25 0.004 0.010
A2 1.25 0.049
b 0.31 0.51 0.012 0.020
c 0.17 0.25 0.007 0.010
D 4.80 5.00 0.189 0.197
E 5.80 6.20 0.228 0.244
E1 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050
0 0° 8° 0° 8°
Note: 1. Follow JEDEC MS-012 AA.

2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.

Rev. A.2 - May., 2008

APM4548AK
Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A
E1
F
W
B0
K0 A0 OD1 B A
B
SECTION A-A
T
SECTION B-B
d
H
A
T1
Application A H T1 C d D W E1 F
330.0± 12.4+2.00 13.0+0.50
2.00 50 MIN. -0.00 -0.20 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05
SOP-8 P0 P1 P2 D0 D1 T A0 B0 K0
4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 1.5 MIN. 0.6+0.00 6.40±0.20 5.20±0.20 2.10±0.20
-0.00 -0.40
(mm)
Devices Per Unit
Package Type Unit Quantity

SOP-8 Tape & Reel 2500

Rev. A.2 - May., 2008

APM4548AK
Reflow Condition (IR/Convection or VPR Reflow)
TP tp
Critical Zone
TL to TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25°C to Peak
Time
Reliability Test Program

Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C, 5 SEC
HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C
PCT JESD-22-B,A102 168 Hrs, 100%RH, 121°C
TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles

Rev. A.2 - May., 2008

APM4548AK
Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
3°C/second max. 3°C/second max.
(TL to TP)
Preheat
100°C 150°C
- Temperature Min (Tsmin)
150°C 200°C
- Temperature Max (Tsmax)
60-120 seconds 60-180 seconds
- Time (min to max) (ts)
Time maintained above:
183°C 217°C
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp) See table 1 See table 2
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.
Notes: All temperatures refer to topside of the package. Measured on the body surface.
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures

3 3
Volume mm Volume mm
Package Thickness
<350 ≥350
<2.5 mm 240 +0/-5°C 225 +0/-5°C
≥2.5 mm 225 +0/-5°C 225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures

3 3 3
Volume mm Volume mm Volume mm
Package Thickness
<350 350-2000 >2000
<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*
1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*
* Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated
classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL
level.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindian City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

Rev. A.2 - May., 2008

APM4548AK: Features Pin Description

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APM4548AK

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features Pin Description

• Reliable and Rugged

• Power Management in Notebook Computer,

Systems N-Channel MOSFET P-Channel MOSFET

Ordering and Marking Information

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Free Datasheet http://www.Datasheet4U.com

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter N Channel P Channel Unit

Electrical Characteristics (TA = 25°C unless otherwise noted)

a Drain-Source On-State VGS=-10V, IDS=-6A P-Ch 32 42

Copyright  ANPEC Electronics Corp. 2 www.anpec.com.tw

Free Datasheet http://www.Datasheet4U.com

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp. 3 www.anpec.com.tw

Free Datasheet http://www.Datasheet4U.com

ID - Drain Current (A)

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

Copyright  ANPEC Electronics Corp. 4 www.anpec.com.tw

Free Datasheet http://www.Datasheet4U.com

Typical Characteristics (Cont.)

RDS(ON) - On - Resistance (mΩ)

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Drain-Source On Resistance Gate Threshold Voltage

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp. 5 www.anpec.com.tw

Free Datasheet http://www.Datasheet4U.com

Typical Characteristics (Cont.)

IS - Source Current (A)

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp. 6 www.anpec.com.tw

Free Datasheet http://www.Datasheet4U.com

Typical Characteristics (Cont.)

-ID - Drain Current (A)

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

1ms 0.1 0.05

Copyright  ANPEC Electronics Corp. 7 www.anpec.com.tw

Free Datasheet http://www.Datasheet4U.com

Typical Characteristics (Cont.)

RDS(ON) - On - Resistance (mΩ)

-VDS - Drain - Source Voltage (V) -ID - Drain Current (A)

Drain-Source On Resistance Gate Threshold Voltage

-VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp. 8 www.anpec.com.tw

Free Datasheet http://www.Datasheet4U.com

Typical Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

-IS - Source Current (A)

Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

-VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp. 9 www.anpec.com.tw

Free Datasheet http://www.Datasheet4U.com

Note: 1. Follow JEDEC MS-012 AA.

Copyright  ANPEC Electronics Corp. 10 www.anpec.com.tw

Free Datasheet http://www.Datasheet4U.com

Carrier Tape & Reel Dimensions