APM2510NU

N-Channel Enhancement Mode MOSFET

Features Pin Description

• 25V/50A,
RDS(ON)=8.5mΩ (typ.) @ VGS=10V
G D
RDS(ON)=15mΩ (typ.) @ VGS=4.5V
• Super High Dense Cell Design S

• Avalanche Rated
Top View of TO-252
• Reliable and Rugged
• Lead Free and Green Devices Available D

(RoHS Compliant)

Applications
G

• Power Management in Desktop Computer or

DC/DC Converters

S
N-Channel MOSFET

Ordering and Marking Information

Package Code
APM2510N U : TO-252
Assembly Material Operating Junction Temperature Range
C : -55 to 150° C
Handling Code Handling Code
TR : Tape & Reel
Temperature Range Assembly Material
L : Lead Free Device
Package Code G : Halogen and Lead Free Device

APM2510N U : APM2510N XXXXX - Date Code

XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. A.2 - Jul., 2008

http://www.Datasheet4U.com
APM2510NU

Absolute Maximum Ratings

Symbol Parameter Rating Unit

Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 25
V
VGSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
IS Diode Continuous Forward Current TC=25°C 30 A
TC=25°C 120
IDP 300µs Pulse Drain Current Tested A
TC=100°C 80
TC=25°C 50*
ID Continuous Drain Current A
TC=100°C 35
TC=25°C 50
PD Maximum Power Dissipation W
TC=100°C 20
RθJC Thermal Resistance-Junction to Case 2.5 °C/W
RθJA Thermal Resistance-Junction to Ambient 50 °C/W
EAS Drain-Source Avalanche Energy, L=0.5mH 100 mJ
Notes:
* Current limited by bond wire.

Electrical Characteristics (TA = 25°C)

APM2510NU
Symbol Parameter Test Conditions Unit
Min. Typ. Max.

Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 25 V
VDS=20V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 1.8 2.5 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V ±100 nA
VGS=10V, IDS=30A 8.5 10
RDS(ON) a Drain-Source On-state Resistance mΩ
VGS=4.5V, IDS=15A 15 20

Diode Characteristics
VSDa Diode Forward Voltage ISD=15A, VGS=0V 0.8 1.1 V
trr Reverse Recovery Time 20 ns
IDS=30A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge 10 nC

Copyright  ANPEC Electronics Corp. 2 www.anpec.com.tw

Rev. A.2 - Jul., 2008
APM2510NU

Electrical Characteristics (Cont.) (TA = 25°C)

APM2510NU
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
b
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1 1.9 3.9 Ω
Ciss Input Capacitance 960 1250
VGS=0V,
Coss Output Capacitance VDS=15V, 230 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 185
td(ON) Turn-on Delay Time 11 21
tr Turn-on Rise Time VDD=15V, RL=15Ω, 13 24
IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time RG=6Ω 29 53
tf Turn-off Fall Time 10 19
b
Gate Charge Characteristics
Qg Total Gate Charge 24 33
VDS=15V, VGS=10V,
Qgs Gate-Source Charge 3.8 nC
IDS=30A
Qgd Gate-Drain Charge 8.2
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.

Copyright  ANPEC Electronics Corp. 3 www.anpec.com.tw

Rev. A.2 - Jul., 2008
APM2510NU

Typical Characteristics

Power Dissipation Drain Current

60 60

50 50

ID - Drain Current (A)

Ptot - Power (W)

40 40

30 30

20 20

10 10

o o
TC=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

300 2

1
Duty = 0.5
Normalized Effective Transient

100
it
Lim 0.2
ID - Drain Current (A)

on) 1ms
s( 0.1
Rd
10ms 0.05
100ms
0.1
10 0.02

1s
0.01

DC
Single Pulse
1 0.01

2
Mounted on 1in pad
o o
TC=25 C RθJA :50 C/W
0.1 1E-3
0.1 1 10 70 1E-4 1E-3 0.01 0.1 1 10 100

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp. 4 www.anpec.com.tw

Rev. A.2 - Jul., 2008
APM2510NU

Typical Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

100 28
VGS=7,8,9,10V
90 6V
24

RDS(ON) - On - Resistance (mΩ)

80
VGS=4.5V
70 20
ID - Drain Current (A)

60 5V 16
50
12
40
VGS=10V
30 4V 8
20
4
10 3V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Drain-Source On Resistance Gate Threshold Voltage

40 1.6
ID=30A IDS =250µA
35
Normalized Threshold Vlotage

1.4
RDS(ON) - On - Resistance (mΩ)

30
1.2
25
1.0
20
0.8
15

0.6
10

5 0.4

0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp. 5 www.anpec.com.tw

Rev. A.2 - Jul., 2008
APM2510NU

Typical Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0 100
VGS = 10V
1.8 IDS = 30A
Normalized On Resistance

1.6
o
Tj=150 C

IS - Source Current (A)

1.4
10
1.2
o
Tj=25 C
1.0

0.8
1
0.6

0.4

0.2
o
RON@Tj=25 C: 8.5mΩ
0.0 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5 1.8

Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V)

Capacitance Gate Charge

1600 10
Frequency=1MHz VDS= 15V
9 ID= 30A
1400
8
VGS - Gate-source Voltage (V)

1200
7
C - Capacitance (pF)

1000 Ciss 6

5
800
4
600
3
400 2
Coss
200 Crss 1

0
0 0 4 8 12 16 20 24
0 5 10 15 20 25

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp. 6 www.anpec.com.tw

Rev. A.2 - Jul., 2008
APM2510NU

Avalanche Test Circuit and Waveforms

VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD
VDD
tp IL EAS
0.01Ω

tAV

Avalanche Test Circuit and Waveforms

VDS
RD
VDS
DUT
90%
VGS
RG
VDD

10%
tp
VGS
td(on) tr td(off) tf

Copyright  ANPEC Electronics Corp. 7 www.anpec.com.tw

Rev. A.2 - Jul., 2008
APM2510NU

Package Information
TO-252

E A
b3 c2 E1

L3

D1
D

H
L4

c
b e
SEE VIEW A
0

GAUGE PLANE SEATING PLANE

L A1
0.25

VIEW A

S TO-252
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094
A1 0.13 0.005
b 0.50 0.89 0.020 0.035
b3 4.95 5.46 0.195 0.215
c 0.46 0.61 0.018 0.024
c2 0.46 0.89 0.018 0.035
D 5.33 6.22 0.210 0.245
D1 4.57 6.00 0.180 0.236
E 6.35 6.73 0.250 0.265
E1 3.81 6.00 0.150 0.236
e 2.29 BSC 0.090 BSC
H 9.40 10.41 0.370 0.410
L 0.90 1.78 0.035 0.070
L3 0.89 2.03 0.035 0.080
L4 1.02 0.040
0 0° 8° 0° 8°

Note : Follow JEDEC TO-252 .

Copyright  ANPEC Electronics Corp. 8 www.anpec.com.tw

Rev. A.2 - Jul., 2008
APM2510NU

Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 OD1 B A
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F
330.0± 16.4+2.00 13.0+0.50
2.00 50 MIN. -0.00 -0.20 1.5 MIN. 20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.05
TO-252 P0 P1 P2 D0 D1 T A0 B0 K0

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 1.5 MIN. 0.6+0.00 6.80±0.20 10.40± 2.50±0.20
-0.00 -0.40 0.20

(mm)

Devices Per Unit

Package Type Unit Quantity

TO-252 Tape & Reel 2500

Copyright  ANPEC Electronics Corp. 9 www.anpec.com.tw

Rev. A.2 - Jul., 2008
APM2510NU

Reflow Condition (IR/Convection or VPR Reflow)

TP tp
Critical Zone
TL to TP
Ramp-up

TL
Temperature

tL
Tsmax

Tsmin
Ramp-down
ts
Preheat

t 25 °C to Peak
25

Time
Reliability Test Program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C, 5 SEC
HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C
PCT JESD-22-B,A102 168 Hrs, 100%RH, 121°C
TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
3°C/second max. 3°C/second max.
(TL to TP)
Preheat
100°C 150°C
- Temperature Min (Tsmin)
- Temperature Max (Tsmax) 150°C 200°C
60-120 seconds 60-180 seconds
- Time (min to max) (ts)
Time maintained above:
183°C 217°C
- Temperature (TL)
60-150 seconds 60-150 seconds
- Time (tL)
Peak/Classification Temperature (Tp) See table 1 See table 2
Time within 5°C of actual
10-30 seconds 20-40 seconds
Peak Temperature (tp)
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.
Note: All temperatures refer to topside of the package. Measured on the body surface.

Copyright  ANPEC Electronics Corp. 10 www.anpec.com.tw

Rev. A.2 - Jul., 2008
APM2510NU

Classification Reflow Profiles (Con.)

Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3 3
Package Thickness Volume mm Volume mm
<350 ≥350
<2.5 mm 240 +0/-5°C 225 +0/-5°C
≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Table 2. Pb-free Process – Package Classification Reflow Temperatures

3 3 3
Package Thickness Volume mm Volume mm Volume mm
<350 350-2000 >2000
<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*
1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.

Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan
Tel : 886-3-5642000
Fax : 886-3-5642050

Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindian City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

Copyright  ANPEC Electronics Corp. 11 www.anpec.com.tw

Rev. A.2 - Jul., 2008