HX50N06

HX50N06 Pb
Pb Free Plating Product
50A,60V Heatsink Planar N-Channel Power MOSFET

Features
{ 2. Drain
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
BVDSS = 60V
• Low gate charge ( typical 31 nC) ●

• Low Crss ( typical 65 pF)

◀ ▲ RDS(ON) = 0.022 ohm
• Fast switching 1. Gate { ●
●
• 100% avalanche tested
ID = 50A
• Improved dv/dt capability
{ 3. Source
• 175°C maximum junction temperature rating

TO-220M-SQ
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220M-SQ pkg is well suited for
adaptor power units,amplifiers,inverters and SMPS application.
3
2
1

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter HX50N06 Units

VDSS Drain-Source Voltage 60 V
ID Drain Current - Continuous (TC = 25°C) 50 A
- Continuous (TC = 100°C) 35.4 A
IDM Drain Current - Pulsed (Note 1) 200 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 490 mJ
IAR Avalanche Current (Note 1) 50 A
EAR Repetitive Avalanche Energy (Note 1) 12 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PD Power Dissipation (TC = 25°C) 120 W
- Derate above 25°C 0.8 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 1.24 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev.08C Page 1/6

© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/

 HX50N06

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 60 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current
VDS = 48 V, TC = 150°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 25 A -- 0.018 0.022 Ω
On-Resistance
gFS Forward Transconductance VDS = 25 V, ID = 25 A (Note 4) -- 22 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1180 1540 pF
Coss Output Capacitance f = 1.0 MHz -- 440 580 pF
Crss Reverse Transfer Capacitance -- 65 90 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 15 40 ns
VDD = 30 V, ID = 25 A,
tr Turn-On Rise Time -- 105 220 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 60 130 ns
tf Turn-Off Fall Time (Note 4, 5) -- 65 140 ns
Qg Total Gate Charge VDS = 48 V, ID = 50 A, -- 31 41 nC
Qgs Gate-Source Charge VGS = 10 V -- 8 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 13 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 50 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 50 A, -- 52 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4) -- 75 -- nC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 230µH, IAS = 50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 50A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

Rev.08C Page 2/6

© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/

 HX50N06

Typical Characteristics

VGS
Top : 15.0 V
2 10.0 V 2
10 10
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V

ID, Drain Current [A]

ID, Drain Current [A]

1
10 1
10

175℃

25℃
※ Note : ※ Notes :
1. 250μ s Pulse Test 1. VDS = 30V
2. TC = 25℃ -55℃ 2. 250μ s Pulse Test
0
10
0
10
10
-1
10
0
10
1 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.05

2
10
0.04
Drain-Source On-Resistance

VGS = 10V
IDR, Reverse Drain Current [A]
R DS(ON) [ Ω ],

0.03
VGS = 20V

1
0.02 10

0.01
※ Notes :
175℃ 25℃ 1. VGS = 0V
※ Note : TJ = 25℃
2. 250μ s Pulse Test
0.00
0 50 100 150 200 10
0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

ID, Drain Current [A]
VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

3000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500 10 VDS = 30V

VDS = 48V
V GS , Gate-Source Voltage [V]

Coss
2000 8
Ciss
Capacitance [pF]

※ Notes :
1. VGS = 0 V
2. f = 1 MHz 6
1500

4
1000
Crss
2
500
※ Note : ID = 50A

0
0 0 5 10 15 20 25 30 35
-1 0 1
10 10 10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Rev.08C Page 3/6

© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/

 HX50N06

Typical Characteristics (Continued)

1.2
2.5
Drain-Source Breakdown Voltage

2.0
1.1

Drain-Source On-Resistance
BV DSS , (Normalized)

RDS(ON) , (Normalized)
1.5

1.0

1.0

0.9 ※ Notes :
1. VGS = 0 V
2. ID = 250 μ A 0.5 ※ Notes :
1. VGS = 10 V
2. ID = 25 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

3
10 60

Operation in This Area

is Limited by R DS(on)
50

2 100μ s 40
ID , Drain Current [A]

10
ID , Drain Current [A]

1 ms
10 ms
30
DC
1
10 20

※ Notes :
o
1. TC = 25 C 10
o
2. TJ = 175 C
3. Single Pulse
0
10 0
-1 0 1 2
10 10 10 10 25 50 75 100 125 150 175

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
(t), T h e rm a l R e s p o n s e

0
10

D = 0 .5

0 .2 ※ N otes :
1 . Z θ J C( t ) = 1 . 2 4 ℃ /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
0 .1 3 . T J M - T C = P D M * Z θ J C( t )
-1
10
0 .0 5
PDM
0 .0 2
t1
JC

0 .0 1
s in g le p u ls e t2
θ
Z

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]

Figure 11. Transient Thermal Response Curve

Rev.08C Page 4/6

© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/

 HX50N06

Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

Rev.08C Page 5/6

© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/

 HX50N06

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

Rev.08C Page 6/6

© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/