NIKO-SEM Dual N-Channel Enhancement Mode PK650DY

Field Effect Transistor PDFN 5x6P

Halogen-Free & Lead-Free

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
Q2 30V 2.8mΩ 83A
Q1 30V 11mΩ 36A

Features
• Pb−Free, Halogen Free and RoHS compliant.
• Low RDS(on) to Minimize Conduction Losses.
• Ohmic Region Good RDS(on) Ratio. 1 : G1
• Optimized Gate Charge to Minimize Switching Losses. 2,3,4 : D1
5,6,7 : S2
Applications 8 : G2
• Protection Circuits Applications.
• Logic/Load Switch Circuits Applications
• Computer for DC to DC Converters Applications.

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±20 ±20 V

3
TC = 25 °C 83 36
Continuous Drain Current ID
TC = 100 °C 52 23
1
Pulsed Drain Current IDM 130 55
A
TA = 25 °C 21 10
Continuous Drain Current ID
TA = 70 °C 17 8
Avalanche Current IAS 52 21
Avalanche Energy L = 0.1mH EAS 135 22 mJ
TC = 25 °C 36 28
Power Dissipation PD W
TC = 100 °C 14 11
TA = 25 °C 2.4 2
Power Dissipation PD W
TA = 70 °C 1.5 1.3
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

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NIKO-SEM Dual N-Channel Enhancement Mode PK650DY
Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS

2
RJA Q2 51
Junction-to-Ambient
RJA Q1 60
°C / W
RJC Q2 3.4
Junction-to-Case
RJC Q1 4.4
1
Pulse width limited by maximum junction temperature TJ(MAX)=150°C.
2 2
The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
3
Package limitation current :Q1=29A,Q2=42A.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Q2 30
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A
Q1 30
Q2 1.3 1.75 2.3 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A
Q1 1.3 1.75 2.3
Q2 ±100
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V nA
Q1 ±100
Q2 1
VDS = 24V, VGS = 0V
Q1 1
A
Zero Gate Voltage Drain Current IDSS Q2 10
VDS = 20V, VGS = 0V, TJ = 55 °C
Q1 10
VGS =4.5V, ID = 16A Q2 2.1 3.8
VGS =4.5V, ID = 10A Q1 10 14
Drain-Source On-State RDS(ON)
Resistance
1
VGS = 10V, ID = 20A Q2 1.6 2.8 mΩ

VGS = 10V, ID = 10A Q1 6.8 11

1 VDS = 5V, ID = 20A Q2 55
Forward Transconductance gfs S
VDS = 5V, ID = 10A Q1 40

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NIKO-SEM Dual N-Channel Enhancement Mode PK650DY
Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

DYNAMIC
Q2 3685
Input Capacitance Ciss
Q1 531
Q2 615
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz pF
Q1 147
Q2 388
Reverse Transfer Capacitance Crss
Q1 67
Q2 1
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Ω
Q1 1
Q2 72
VGS = 10V

2 Q1 10
Total Gate Charge Qg
Q2 Q2 37
VGS = 4.5V
VDS = 15V , ,ID = 20A
Q1 5.6
nC
2 Q2 10
Gate-Source Charge Qgs Q1
VDS = 15V , ID = 10A Q1 1.4
Q2 18
2
Gate-Drain Charge Qgd
Q1 3

2 Q2 32
Turn-On Delay Time td(on)
Q2 Q1 15
2 VDS = 15V , Q2 16
Rise Time tr
ID  20A, VGS = 10V, RGEN =6Ω Q1 13
nS
2
Q1 Q2 72
Turn-Off Delay Time td(off)
VDS = 15V , Q1 21
ID  10A, VGS = 10V, RGEN =6Ω
Q2 10
2
Fall Time tf
Q1 15
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C)
3 Q2 36
Continuous Current IS A
Q1 23
1 IF = 20A, VGS = 0V Q2 1
Forward Voltage VSD V
IF = 10A, VGS = 0V Q1 1.2
Q2 Q2 28
Reverse Recovery Time trr nS
IF = 20A, dlF/dt = 100A / S Q1 8.8
Q1 Q2 13
Reverse Recovery Charge Qrr nC
IF = 10A, dlF/dt = 100A / S Q1 1.2
Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
1
2
Independent of operating temperature.
3
Package limitation current :Q1=29A,Q2=42A.

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NIKO-SEM Dual N-Channel Enhancement Mode PK650DY
Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

TYPICAL PERFORMANCE CHARACTERISTICS

Q2

Output Characteristics Transfer Characteristics

30
30
VGS=3V

ID, Drain-To-Source Current(A)

ID, Drain-To-Source Current(A)

24
24
VGS=10V
VGS=9V
VGS=8V
18 VGS=7V
18
VGS=6V
VGS=5V
VGS=4.5V
12 25℃
12
VGS=2.5V

125℃ -20℃
6
6

0
0
0 1 2 3 4 5
0 1 2 3 4 5
VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V)

On-Resistance VS Gate-To-Source On-Resistance VS Drain Current

0.01 0.01
Voltage
0.008 0.008
RDS(ON)ON-Resistance(OHM)
RDS(ON)ON-Resistance(OHM)

0.006 0.006

0.004 0.004

VGS=4.5V

0.002 0.002

VGS=10V
ID=20A
0 0
2 4 6 8 10 0 6 12 18 24 30

VGS, Gate-To-Source Voltage(V) ID , Drain-To-Source Current(A)

Gate charge Characteristics Capacitance Characteristic

10 4500
Characteristics
VGS , Gate-To-Source Voltage(V)

CISS
VDS=15V
8 ID=20A 3600
C , Capacitance(pF)

6 2700

4 1800

COSS

2 900

CRSS
0 0
0 20 40 60 80 100 0 5 10 15 20 25 30

Qg , Total Gate Charge(nC) VDS, Drain-To-Source Voltage(V)

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NIKO-SEM Dual N-Channel Enhancement Mode PK650DY
Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

On-Resistance VS Temperature Source-Drain Diode Forward Voltage

2.0 100

1.8
Normalized Drain to Source

1.6

IS , Source Current(A)
10
ON-Resistance

1.4

1.2

1.0 150℃ 25℃

1

0.8
VGS=10V
0.6 ID=20A

0.4 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ , Junction Temperature(˚C) VSD, Source-To-Drain Voltage(V)

Safe Operating Area Single Pulse Maximum Power Dissipation

1000 80
Operation in This Area
is Limited by RDS(ON)
ID , Drain Current(A)

Single Pulse
100 64 RθJA = 51˚C/W
TA=25˚C
Power(W)

10 48

1ms

1 10ms 32
100ms

NOTE :
0.1 1.VGS= 10V 16
2.TA=25˚C DC
3.RθJA = 51 ˚C/W
4.Single Pulse
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100

VDS, Drain-To-Source Voltage(V) Single Pulse Time(s)

Transient Thermal Response Curve

10
Transient Thermal Resistance
r(t) , Normalized Effective

Duty cycle=0.5

0.2 Notes

0.1
0.1
0.05
1.Duty cycle, D= t1 / t2
0.02
2.RthJA = 51 ℃/W
0.01 3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
single pulse
0.01
0.0001 0.001 0.01 0.1 1 10 100

T1 , Square Wave Pulse Duration(sec)

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NIKO-SEM Dual N-Channel Enhancement Mode PK650DY
Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

Q1

Output Characteristics Transfer Characteristics

30 30

VGS=4V
ID, Drain-To-Source Current(A)

ID, Drain-To-Source Current(A)

VGS=3.5V
24 24

VGS=10V
VGS=9V
18 VGS=8V 18
VGS=7V
VGS=6V
VGS=5V 25℃
12 VGS=4.5V 12

125℃
6 6 -20℃
VGS=3V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V)

On-Resistance VS Gate-To-Source On-Resistance VS Drain Current

0.02Voltage 0.02
RDS(ON)ON-Resistance(OHM)
RDS(ON)ON-Resistance(OHM)

0.015 0.015

VGS=4.5V

0.01 0.01

0.005 0.005 VGS=10V

ID=10A

0 0
2 4 6 8 10 0 6 12 18 24 30
VGS, Gate-To-Source Voltage(V) ID , Drain-To-Source Current(A)

Gate charge Characteristics Capacitance Characteristic

10 700
Characteristics
VGS , Gate-To-Source Voltage(V)

VDS=15V
ID=10A 600
CISS
8
C , Capacitance(pF)

500

6
400

300
4
COSS
200

2
100

CRSS
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30

Qg , Total Gate Charge(nC) VDS, Drain-To-Source Voltage(V)

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NIKO-SEM Dual N-Channel Enhancement Mode PK650DY
Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

On-Resistance VS Temperature Source-Drain Diode Forward Voltage

2.0 100

1.8
Normalized Drain to Source

1.6

IS , Source Current(A)
10
ON-Resistance

1.4

1.2

1.0
1 150℃ 25℃
0.8
VGS=10V
ID=10A
0.6

0.4 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ , Junction Temperature(˚C) VSD, Source-To-Drain Voltage(V)

Safe Operating Area Single Pulse Maximum Power Dissipation

100 50

Single Pulse
40 RθJA = 60 ˚C/W
ID , Drain Current(A)

10 TA = 25˚C
Power(W)

30
1ms
1
Operation in This 10ms
Area is Limited by 20
RDS(ON) 100ms

0.1
NOTE :
1.VGS= 10V DC 10
2.TA = 25˚C
3.RθJA = 60 ˚C/W
4.Single Pulse
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100

VDS, Drain-To-Source Voltage(V) Single Pulse Time(s)

Transient Thermal Response Curve

10
Transient Thermal Resistance
r(t) , Normalized Effective

Duty cycle=0.5

0.2 Notes

0.1
0.1
0.05
0.02 1.Duty cycle, D= t1 / t2
0.01 2.RthJA = 60 ℃/W
single pulse 3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA

0.01
0.0001 0.001 0.01 0.1 1 10 100

T1 , Square Wave Pulse Duration(sec)

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