NIKO-SEM N-Channel Logic Level Enhancement P1703BDG

Mode Field Effect Transistor TO-252 (DPAK)

Lead-Free

D
PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID 1. GATE
2. DRAIN
25 17mΩ 46A G
3. SOURCE

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Gate-Source Voltage VGS ±20 V
TC = 25 °C 46
Continuous Drain Current ID
TC = 100 °C 28
1
A
Pulsed Drain Current IDM 140
Avalanche Current IAR 20
Avalanche Energy L = 0.1mH EAS 140
2
mJ
Repetitive Avalanche Energy L = 0.05mH EAR 5.6
TC = 25 °C 55
Power Dissipation PD W
TC = 100 °C 33
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150
1
°C
Lead Temperature ( /16” from case for 10 sec.) TL 275

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RθJC 3
Junction-to-Ambient RθJA 70 °C / W
Case-to-Heatsink RθCS 0.7
1
Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1％
2

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 25
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.8 1.2 2.5
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
VDS = 20V, VGS = 0V 25
Zero Gate Voltage Drain Current IDSS µA
VDS = 20V, VGS = 0V, TJ = 125 °C 250

1 SEP-24-2004
NIKO-SEM N-Channel Logic Level Enhancement P1703BDG
Mode Field Effect Transistor TO-252 (DPAK)
Lead-Free

On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 45 A

Drain-Source On-State VGS = 7V, ID = 18A 18 25

RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 20A 14 17
Forward Transconductance1 gfs VDS = 15V, ID = 30A 16 S
DYNAMIC
Input Capacitance Ciss 600
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 290 pF
Reverse Transfer Capacitance Crss 100
2
Total Gate Charge Qg 25
2 VDS = 0.5V(BR)DSS, VGS = 10V,
Gate-Source Charge Qgs 2.9 nC
Gate-Drain Charge2 Qgd ID = 20A 7.0
2
Turn-On Delay Time td(on) 7.0
Rise Time2 tr VDS = 15V, RL = 1Ω 7.0
nS
Turn-Off Delay Time2 td(off) ID ≅ 30A, VGS = 10V, RGS = 2.5Ω 24

Fall Time2 tf 6.0

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current IS 45
3
A
Pulsed Current ISM 150
Forward Voltage1 VSD IF = IS, VGS = 0V 1.3 V
Reverse Recovery Time trr 37 nS
Peak Reverse Recovery Current IRM(REC) IF = IS, dlF/dt = 100A / µS 200 A
Reverse Recovery Charge Qrr 0.043 µC
1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.

REMARK: THE PRODUCT MARKED WITH “P1703BDG”, DATE CODE or LOT #

Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

2 SEP-24-2004
NIKO-SEM N-Channel Logic Level Enhancement P1703BDG
Mode Field Effect Transistor TO-252 (DPAK)
Lead-Free

TYPICAL CHARACTERISTICS

3 SEP-24-2004
NIKO-SEM N-Channel Logic Level Enhancement P1703BDG
Mode Field Effect Transistor TO-252 (DPAK)
Lead-Free

4 SEP-24-2004
NIKO-SEM N-Channel Logic Level Enhancement P1703BDG
Mode Field Effect Transistor TO-252 (DPAK)
Lead-Free

TO-252 (DPAK) MECHANICAL DATA

mm mm
Dimension Dimension
Min. Typ. Max. Min. Typ. Max.

A 9.35 10.4 H 0.89 2.03

B 2.2 2.4 I 6.35 6.80

C 0.45 0.6 J 5.2 5.5

D 0.89 1.5 K 0.6 1

E 0.45 0.69 L 0.5 0.9

F 0.03 0.23 M 3.96 4.57 5.18

G 5.2 6.2 N

A
B

D
E
C

H G
L
3

M
2
J
I

5 SEP-24-2004