STGB30H60DFB, STGP30H60DFB

Datasheet

Trench gate field-stop 600 V, 30 A high speed HB series IGBT

Features
• Maximum junction temperature: TJ = 175 °C
TAB
TAB
• High speed switching series
• Minimized tail current
1
3 • Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
2
3
D PAK TO-220
1
2 • Tight parameter distribution
• Safe paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode

Applications
• Photovoltaic inverters
• High frequency converters

Description
These devices are IGBTs developed using an advanced proprietary trench gate field-
stop structure. These devices are part of the new HB series of IGBTs, which
represent an optimum compromise between conduction and switching loss to
maximize the efficiency of any frequency converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.

Product status link

STGB30H60DFB
STGP30H60DFB

DS10468 - Rev 3 - May 2019 www.st.com

For further information contact your local STMicroelectronics sales office.
 STGB30H60DFB, STGP30H60DFB
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 600 V

Continuous collector current at TC = 25 °C 60

IC
Continuous collector current at TC = 100 °C 30 A

ICP (1)
Pulsed collector current 120

Gate-emitter voltage ±20

VGE V
Transient gate-emitter voltage ±30
Continuous forward current at TC = 25 °C 60
IF
Continuous forward current at TC = 100 °C 30 A

IFP (1)
Pulsed forward current 120

PTOT Total power dissipation at TC = 25 °C 260 W

TSTG Storage temperature range - 55 to 150

°C
TJ Operating junction temperature range - 55 to 175

1. Pulse width limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 0.58

RthJC Thermal resistance junction-case diode 2.08 °C/W

RthJA Thermal resistance junction-ambient 62.5

DS10468 - Rev 3 page 2/21

 STGB30H60DFB, STGP30H60DFB
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter breakdown
V(BR)CES VGE = 0 V, IC = 2 mA 600 V
voltage
VGE = 15 V, IC = 30 A 1.55 2
Collector-emitter saturation
VCE(sat) VGE = 15 V, IC = 30 A, TJ = 125 °C 1.65 V
voltage
VGE = 15 V, IC = 30 A, TJ = 175 °C 1.75

IF = 30 A 2 2.6

VF Forward on-voltage IF = 30 A, TJ = 125 °C 1.7 V

IF = 30 A, TJ = 175 °C 1.6

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 600 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance - 3659 -

Coes Output capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V - 101 - pF

Cres Reverse transfer capacitance - 76 -

Qg Total gate charge - 149 -

VCC = 520 V, IC = 30 A, VGE = 0 to 15 V
Qge Gate-emitter charge - 25 - nC
(see Figure 28. Gate charge test circuit)
Qgc Gate-collector charge - 62 -

DS10468 - Rev 3 page 3/21

 STGB30H60DFB, STGP30H60DFB
Electrical characteristics

Table 5. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 37 -

ns
tr Current rise time - 14.6 -

(di/dt)on Turn-on current slope - 1643 - A/µs

td(off) Turn-off-delay time VCE = 400 V, IC = 30 A, VGE = 15 V, - 146 -

RG = 10 Ω (see Figure 27. Test circuit ns
tf Current fall time for inductive load switching) - 23 -

Eon (1) Turn-on switching energy - 383 -

Eoff (2) Turn-off switching energy - 293 - µJ

Ets Total switching energy - 676 -

td(on) Turn-on delay time - 35 -

ns
tr Current rise time - 16.1 -

(di/dt)on Turn-on current slope - 1496 - A/µs

td(off) Turn-off-delay time VCE = 400 V, IC = 30 A, VGE = 15 V, - 158 -

RG = 10 Ω, TJ = 175 °C (see Figure 27. ns
tf Current fall time Test circuit for inductive load switching) - 65 -

Eon (1) Turn-on switching energy - 794 -

Eoff (2) µJ
Turn-off switching energy - 572 -

Ets Total switching energy - 1366 -

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time - 53 - ns

Qrr Reverse recovery charge - 384 - nC

IF = 30 A, VR = 400 V, VGE = 15 V,
Irrm Reverse recovery current - 14.5 - A
di/dt = 1000 A/μs (see Figure 27. Test
Peak rate of fall of reverse circuit for inductive load switching)
dIrr/dt - 788 - A/µs
recovery current during tb

Err Reverse recovery energy - 104 - µJ

trr Reverse recovery time - 104 - ns

Qrr Reverse recovery charge - 1352 - nC

IF = 30 A, VR = 400 V, VGE = 15 V,
Irrm Reverse recovery current di/dt = 1000 A/µs, TJ = 175 °C - 26 - A

Peak rate of fall of reverse (see Figure 27. Test circuit for inductive
dIrr/dt load switching) - 310 - A/µs
recovery current during tb

Err Reverse recovery energy - 407 - µJ

DS10468 - Rev 3 page 4/21

 STGB30H60DFB, STGP30H60DFB
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature Figure 2. Collector current vs case temperature
GIPG280120141353FSR GIPG280120141346FSR
Ptot IC
(W) (A)

250 60

200
40
150

100
20

50
VGE ≥ 15V, TJ ≤ 175 °C VGE ≥ 15V, TJ ≤ 175 °C
0 0
0 25 50 75 100 125 150 175 TC (°C) 0 25 50 75 100 125 150 TC (°C)

Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C)

IC GIPG280120141156FSR IC GIPG280120141206FSR
(A) VGE =15 V (A) VGE =15 V
VGE =13 V VGE =13 V
100 100
VGE =11 V VGE =11 V

80 80

60 60 VGE =9 V
VGE =9 V
40 40

20 20

VGE =7 V VGE =7 V
0 0
0 1 2 3 4 5 VCE (V) 0 1 2 3 4 5 VCE (V)

Figure 5. VCE(sat) vs junction temperature Figure 6. VCE(sat) vs collector current

GIPG280120141440FSR GIPG280120141446FSR
VCE(sat) VCE(sat)
(V) VGE = 15 V (V) VGE = 15 V
2.2 2.4
IC = 60 A
2.2
2.0 TJ = 175 °C
2.0
1.8
1.8
TJ = 25 °C
1.6 IC = 30 A
1.6

1.4 TJ = -40 °C
1.4
IC = 15 A
1.2 1.2
-50 0 50 100 150 TJ (°C) 15 30 45 60 IC (A)

DS10468 - Rev 3 page 5/21

 STGB30H60DFB, STGP30H60DFB
Electrical characteristics (curves)

Figure 7. Collector current vs switching frequency Figure 8. Forward bias safe operating area
GIPG090720141330FSR
IC GIPG280120141713FSR IC
(A) (A)
Vce(sat) limit
80
TC = 80 °C 100

60 10 µs
10
TC = 100 °C 100 µs
40
1 ms

1
20
Rectangular current shape (single pulse TC = 25°C,
(duty cycle = 0.5, VCC = 400 V, TJ ≤ 175°C; VGE=15V)

0 RG = 10 Ω, VGE = 0/15 V , Tj = 175 °C 0.1

100 101 102 f (kHz) 1 10 100 VCE(V)

Figure 9. Transfer characteristics

Figure 10. Diode VF vs forward current
GIPG090720141349FSR
VF (V)
IC GIPG280120141330FSR
(A)
2.8
VCE = 6 V TJ= -40°C
100
2.4
80 TJ= 25°C
Tj = 175 °C 2.0
60
1.6 TJ= 175°C
Tj = 25 °C
40
1.2
20
0.8
0 10 20 30 40 50 60 IF(A)
5 7 9 11 VGE (V)

Figure 11. Normalized VGE(th) vs junction temperature Figure 12. Normalized V(BR)CES vs junction temperature
AM16060v1 AM16059v2
V GE(th) V(BR)CES
(norm) (norm)
VCE = VGE, IC = 1 mA IC= 2mA
1.1

1.0

0.9

1.0
0.8

0.7

0.6 0.9
-50 0 50 100 150 T J (°C) -50 0 50 100 150 TJ(°C)

DS10468 - Rev 3 page 6/21

 STGB30H60DFB, STGP30H60DFB
Electrical characteristics (curves)

Figure 13. Capacitance variations Figure 14. Gate charge vs. gate-emitter voltage
C GIPG090720141358FSR
VGE (V)
GIPG280120141455FSR

(pF)
16 VCC = 520 V, IC = 30 A
Cies IG = 1mA
14

1000 12

10

100 6

4
Coes 2
Cres
10 0
0.1 1 10 100 VCE (V) 0 40 80 120 160 Qg (nC)

Figure 15. Switching energy vs collector current Figure 16. Switching energy vs gate resistance
GIPG090720141414FSR
E E GIPG090720141421FSR
(µJ) (μJ) VCC = 400 V, IC = 30 A,
VCC = 400V, VGE = 15V,
RG = 10Ω, TJ = 175°C VGE = 15 V, TJ = 175 °C Eon
1400
1600

EON 1200
1200
Eoff
1000
800
800
EOFF
400
600

0 400
0 10 20 30 40 50 60 IC(A) 0 10 20 30 40 RG (Ω)

Figure 17. Switching energy vs temperature Figure 18. Switching energy vs collector emitter voltage
GIPG090720141431FSR
E E GIPG090720141440FSR
(µJ) (μJ) IC = 30 V, RG = 10 Ω,
VCC= 400V, VGE= 15V,
RG= 10Ω, IC= 30A VGE = 15 V, TJ = 175 °C Eon
800 1000

EON
800
600

600
Eoff
400 EOFF
400

200
200

0 0
20 60 100 140 TJ(°C) 100 200 300 400 500 VCE (V)

DS10468 - Rev 3 page 7/21

 STGB30H60DFB, STGP30H60DFB
Electrical characteristics (curves)

Figure 19. Switching times vs collector current Figure 20. Switching times vs gate resistance
GIPG100720141533FSR GIPG100720141549FSR
t t
(ns) (ns)
TJ= 175°C, VGE= 15V, TJ= 175°C, VGE= 15V, tdoff
RG= 10Ω, VCC= 400V IC= 30A, VCC= 400V
tdoff
100
tf
tdon
100
tdon

10
tf
tr

tr
1 10
0 10 20 30 40 50 IC(A) 0 10 20 30 40 RG(Ω)

Figure 21. Reverse recovery current vs diode current

Figure 22. Reverse recovery time vs diode current slope
slope
GIPG110720140846FSR
GIPG100720141607FSR trr
Irm (µs)
(A) IF = 30A, Vr = 400V
IF = 30A, Vr = 400V
200
60 TJ =175°C

150

40 TJ =175°C
100

20 TJ =25°C 50

TJ =25°C
0
0 0 500 1000 1500 2000 di/dt(A/µs)
0 500 1000 1500 2000 2500 di/dt(A/µs)

Figure 23. Reverse recovery charge vs diode current Figure 24. Reverse recovery energy vs diode current
slope slope
GIPG110720140854FSR GIPG110720140859FSR
Qrr Err
(nC) (µJ)
IF = 30A, Vr = 400V IF = 30A, Vr = 400V
TJ =175°C 1000
2000

800 TJ =175°C
1500
600
1000 TJ =25°C
400

500
200 TJ =25°C

0 0
0 500 1000 1500 2000 di/dt(A/µs) 0 500 1000 1500 2000 di/dt(A/µs)

DS10468 - Rev 3 page 8/21

 STGB30H60DFB, STGP30H60DFB
Electrical characteristics (curves)

Figure 25. Thermal impedance for IGBT

ZthTO2T_B
K
δ=0.5

0.2

0.1 0.05
-1
10
0.02
Zth=k Rthj-c
0.01 δ=tp/t

Single pulse tp

t
-2
10 -5 -4 -2 -1
tp (s)
-3
10 10 10 10 10

Figure 26. Thermal impedance for diode

DS10468 - Rev 3 page 9/21

 STGB30H60DFB, STGP30H60DFB
Test circuits

3 Test circuits

Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit

A A
C
L=100 µH k
G k

E B
B
C 3.3 1000 VCC
µF µF
k
G D.U.T
k
+ RG E

k
-
k

AM01504v1 AM01505v1

Figure 30. Diode reverse recovery waveform

Figure 29. Switching waveform

di/dt Qrr
90%
trr
VG 10% IF
ts tf
90%

VCE tr(Voff)
10% IRRM t
tcross
10%
90% IRRM

IC td(off)
10% VRRM
td(on) tf
tr(Ion)
ton toff

AM01506v1

dv/dt

GADG180720171418SA

DS10468 - Rev 3 page 10/21

 STGB30H60DFB, STGP30H60DFB
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

DS10468 - Rev 3 page 11/21

 STGB30H60DFB, STGP30H60DFB
D²PAK (TO-263) type A2 package information

4.1 D²PAK (TO-263) type A2 package information

Figure 31. D²PAK (TO-263) type A2 package outline

0079457_A2_26

DS10468 - Rev 3 page 12/21

 STGB30H60DFB, STGP30H60DFB
D²PAK (TO-263) type A2 package information

Table 7. D²PAK (TO-263) type A2 package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.70 8.90 9.10
E2 7.30 7.50 7.70
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.40
V2 0° 8°

Figure 32. D²PAK (TO-263) recommended footprint (dimensions are in mm)

Footprint

DS10468 - Rev 3 page 13/21

 STGB30H60DFB, STGP30H60DFB
D²PAK packing information

4.2 D²PAK packing information

Figure 33. D²PAK tape outline

DS10468 - Rev 3 page 14/21

 STGB30H60DFB, STGP30H60DFB
D²PAK packing information

Figure 34. D²PAK reel outline

40mm min.
access hole
at slot location
B

D C

N
A

Tape slot G measured

in core for at hub
Full radius tape start
2.5mm min.width

AM06038v1

Table 8. D²PAK tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3

DS10468 - Rev 3 page 15/21

 STGB30H60DFB, STGP30H60DFB
TO-220 type A package information

4.3 TO-220 type A package information

Figure 35. TO-220 type A package outline

0015988_typeA_Rev_22

DS10468 - Rev 3 page 16/21

 STGB30H60DFB, STGP30H60DFB
TO-220 type A package information

Table 9. TO-220 type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95

DS10468 - Rev 3 page 17/21

 STGB30H60DFB, STGP30H60DFB
Ordering information

5 Ordering information

Table 10. Order codes

Order code Marking Package Packing

STGB30H60DFB GB30H60DFB D²PAK Tape and reel

STGP30H60DFB GP30H60DFB TO-220 Tube

DS10468 - Rev 3 page 18/21

 STGB30H60DFB, STGP30H60DFB

Revision history

Table 11. Document revision history

Date Revision Changes

07-Aug-2014 1 Initial release.

Updated Figure 23 and Section 5.
28-Oct-2015 2
Minor text changes.
Modified Figure 3. Output characteristics (TJ = 25 °C), Figure 4. Output characteristics
(TJ = 175 °C), Figure 9. Transfer characteristics, Figure 7. Collector current vs
23-May-2019 3 switching frequency, Figure 18. Switching energy vs collector emitter voltage.
Minor text changes.

DS10468 - Rev 3 page 19/21

 STGB30H60DFB, STGP30H60DFB
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19

DS10468 - Rev 3 page 20/21

 STGB30H60DFB, STGP30H60DFB

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved

DS10468 - Rev 3 page 21/21