STGFW20V60DF

Datasheet

Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

Features
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.8 V (typ.) @ IC = 20 A
• Tight parameter distribution
3
2 • Safe paralleling
1
• Low thermal resistance
TO-3PF • Very fast soft recovery antiparallel diode
C (2)

Applications
• Photovoltaic inverters
• Uninterruptible power supply
G (1)
• Welding
• Power factor correction
• Very high frequency converters
Sc12850_no_tab
E (3)
Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the V series IGBTs, which represent an optimum
compromise between conduction and switching losses to maximize the efficiency
of very high frequency converters. Furthermore, the positive VCE(sat) temperature
coefficient and very tight parameter distribution result in safer paralleling operation.

Product status link

STGFW20V60DF

Product summary

Order code STGFW20V60DF

Marking G20V60DF
Package TO-3PF
Packing Tube

DS10274 - Rev 3 - March 2021 www.st.com

For further information contact your local STMicroelectronics sales office.
 STGFW20V60DF
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 600 V

Continuous collector current at TC = 25 °C 40 A

IC
Continuous collector current at TC = 100 °C 20 A

ICP (1)
Pulsed collector current 80 A

VGE Gate-emitter voltage ±20 V

Continuous forward current at TC = 25 °C 40 A

IF
Continuous forward current at TC = 100 °C 20 A

IFP (1) Pulsed forward current 80 A

Insulation withstand voltage (RMS) from all three leads to external heat sink
VISO 3.5 kV
(t = 1 s, TC = 25 °C)

PTOT Total power dissipation at TC = 25 °C 86.7 W

TSTG Storage temperature range -55 to 150 °C

TJ Operating junction temperature range -55 to 175 °C

1. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

Thermal resistance, junction-to-case IGBT 1.73

RthJC °C/W
Thermal resistance, junction-to-case diode 2.55
RthJA Thermal resistance, junction-to-ambient 50 °C/W

DS10274 - Rev 3 page 2/15

 STGFW20V60DF
Electrical characteristics

2 Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter breakdown
V(BR)CES VGE = 0 V, IC = 2 mA 600 V
voltage
VGE = 15 V, IC = 20 A 1.8 2.2
Collector-emitter saturation
VCE(sat) VGE = 15 V, IC = 20 A, TJ = 125 °C 2.15 V
voltage
VGE = 15 V, IC = 20 A, TJ = 175 °C 2.3

IF = 20 A 1.7 2.2

VF Forward on-voltage IF = 20 A, TJ = 125 °C 1.55 V

IF = 20 A, TJ = 175 °C 1.3

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 600 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V 250 µA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance - 2800 - pF

Coes Output capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V - 110 - pF

Cres Reverse transfer capacitance - 64 - pF

Qg Total gate charge - 116 - nC

VCC = 480 V, IC = 20 A, VGE = 0 to 15 V
Qge Gate-emitter charge - 24 - nC
(see Figure 28. Gate charge test circuit)
Qgc Gate-collector charge - 50 - nC

DS10274 - Rev 3 page 3/15

 STGFW20V60DF
Electrical characteristics

Table 5. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 38 - ns

tr Current rise time - 10 - ns

(di/dt)on Turn-on current slope - 1556 - A/µs

VCE = 400 V, IC = 20 A,
td(off) Turn-off-delay time - 149 - ns
RG = 10 Ω, VGE = 15 V
tf Current fall time (see Figure 27. Test circuit for inductive - 15 - ns
(1) load switching)
Eon Turn-on switching energy - 200 - µJ

Eoff (2) Turn-off switching energy - 130 - µJ

Ets Total switching energy - 330 - µJ

td(on) Turn-on delay time - 37 - ns

tr Current rise time - 12 - ns

(di/dt)on Turn-on current slope - 1340 - A/µs

VCE = 400 V, IC = 20 A,
td(off) Turn-off-delay time - 150 - ns
RG = 10 Ω, VGE = 15 V, TJ = 175 °C
tf Current fall time (see Figure 27. Test circuit for inductive - 23 - ns
load switching)
Eon (1) Turn-on switching energy - 430 - µJ

Eoff (2) Turn-off switching energy - 210 - µJ

Ets Total switching energy - 640 - µJ

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time - 40 ns

Qrr Reverse recovery charge IF = 20 A, VR = 400 V, - 320 nC

Irrm Reverse recovery current VGE = 15 V, di/dt = 1000 A/µs - 16 A

Peak rate of fall of reverse (see Figure 27. Test circuit for inductive
dIrr/dt - 910 A/µs
recovery current during tb load switching)

Err Reverse recovery energy - 115 µJ

trr Reverse recovery time - 72 ns

IF = 20 A, VR = 400 V,
Qrr Reverse recovery charge - 930 nC
VGE = 15 V, di/dt = 1000 A/µs,
Irrm Reverse recovery current - 26 A
TJ = 175 °C
Peak rate of fall of reverse
dIrr/dt (see Figure 27. Test circuit for inductive - 530 A/µs
recovery current during tb
load switching)
Err Reverse recovery energy - 307 µJ

DS10274 - Rev 3 page 4/15

 STGFW20V60DF
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature Figure 2. Collector current vs case temperature
PTOT GADG160320210805PDT IC GADG160320210806CCT
(W) (A)

80 24
VGE ≥ 15 V, TJ ≤ 175 °C
VGE ≥ 15 V, TJ ≤ 175 °C
60 18

40 12

20 6

0 0
25 75 125 175 TC (°C) 25 75 125 175 TC (°C)

Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C)
Ic (A) AM17171v1
Ic (A) AM17172v1

15 V 11 V
70 70
15 V
11 V
60 60

50 50

40 40
13 V 13 V
9V
30 30
9V
20 20

10 10
VGE =7 V VGE =7 V
0 0
0 1 2 3 4 VCE (V) 0 1 2 3 4 VCE (V)

Figure 5. VCE(sat) vs junction temperature Figure 6. VCE(sat) vs collector current

VCE(sat) AM17176v1
VCE(sat) AM17177v1

(V) (V)
VGE = 15V VGE = 15V
2.8
IC 40A 4.0 TJ = 175°C
2.6
3.6
2.4
3.2 TJ = 25°C
IC = 20A
2.2
2.8
2.0 2.4
1.8 2.0
IC = 10A TJ = - 40°C
1.6 1.6
1.4 1.2

1.2 0.8
-50 -25 0 25 50 75 100 125 150 175 TJ (ºC) 0 10 20 30 40 50 60 70 80 I C (A)

DS10274 - Rev 3 page 5/15

 STGFW20V60DF
Electrical characteristics (curves)

Figure 7. Transfer characteristics Figure 8. Diode VF vs forward current

AM17173v1 AM17178v1
IC (A) VF (V)
VCE = 10 V
70 2.4
- 40°C
60
2.0
50 25°C

40 1.6

TJ =175 °C
30
TJ=175°C 1.2
20
25°C -40°C
10 0.8
7 8 9 10 11 VGE (V) 10 15 20 25 30 35 I F (A)

Figure 9. Normalized VGE(th) vs junction temperature Figure 10. Normalized V(BR)CES vs junction temperature
VGE(th) AM17181v1 V(BR)ces AM17180v1
norm norm
1.1 VCE = VGE
IC= 2 mA
IC = 1mA 1.1

1.0

0.9

1.0
0.8

0.7

0.6 0.9
-50 0 50 100 150 TJ (ºC) -50 0 50 100 150 TJ (ºC)

Figure 11. Capacitance variations Figure 12. Gate charge vs gate-emitter voltage
C (pF) AM17183v1 VGE (V) AM17182v1

C ies 16 VCC = 480 V

IC = 20 A
14

1000 12

Coes 10
C res 8

100 6

10 0
0.1 1 10 VCE (V) 0 25 50 75 100 125 Qg (nC)

DS10274 - Rev 3 page 6/15

 STGFW20V60DF
Electrical characteristics (curves)

Figure 13. Switching energy vs collector current Figure 14. Switching energy vs gate resistance
E (µJ) AM17185v1
E (µJ) AM17184v1

VCC 400V, VGE= 15V,

VCC 400V, VGE= 15V, IC =20 A, TJ = 175°C
1000 Rg=10Ω, TJ = 175°C
700
800 E ON

600 500
EON E OFF
400
EOFF 300
200

0 100
0 10 20 30 40 Ic (A) 0 10 20 30 40 RG (Ω)

Figure 15. Switching energy vs junction temperature Figure 16. Switching energy vs collector emitter voltage
AM17186v1 AM17187v1
E (µJ) E (µJ)
600 VGE= 15V,TJ = 175 °C
450
VCC 400V, VGE= 15V, IC = 20 A, Rg= 10 Ω
IC = 20 A, Rg= 10 Ω
400 500
350
EON
400
300
EON

250 300
EOFF EOFF
200
200
150

100 100
0 25 50 75 100 125 150 175 TJ (ºC) 150 200 250 300 350 400 450 Vce (V)

Figure 17. Switching times vs collector current Figure 18. Switching times vs gate resistance
AM17188v1 AM17189v1
t (ns) t (ns)
VCC = 400V, VGE = 15V, VCC= 400V, VGE = 15V, t doff
Tj =175 °C, Rg = 10 Ω Tj=175 °C Ic = 20 A
t doff

100 t don
100
tf t don

tf
10 10
tr
tr

1 1
0 10 20 30 40 Ic (A) 0 10 20 30 40 Rg (Ω)

DS10274 - Rev 3 page 7/15

 STGFW20V60DF
Electrical characteristics (curves)

Figure 19. Reverse recovery current vs diode current slope Figure 20. Reverse recovery time vs diode current slope
AM17190v1 AM17191v1
I rm (A) trr (µs)
Vr = 400V, IF = 20 A Vr = 400V, IF = 20 A
180
50
160
140
40
120 TJ=175 °C

30 100
TJ=175 °C
80
20
TJ=25°C 60
40
10
20 TJ=25°C

0 0
0 500 1000 1500 2000 2500 di/dt (A/µs) 0 500 1000 1500 2000 2500 di/dt (A/µs)

Figure 21. Reverse recovery charge vs diode current Figure 22. Reverse recovery energy vs diode current
slope slope
AM17193v1
Qrr (nC) AM17192v1 Err (µJ)
Vr = 400 V, IF = 20 A
Vr = 400V, IF = 20 A
1400 800
TJ=175 °C 700
1200
600
1000
500
800
400 TJ=175 °C
600
300
400
200
TJ=25°C
200 100 TJ=25°C

0 0
0 500 1000 1500 2000 2500 di/dt (A/µs) 0 500 1000 1500 2000 2500 di/dt (A/µs)

Figure 23. Safe operating area Figure 24. Collector current vs switching frequency

IC GADG160320210807FSOA IC GADG160320210807CCS
(A) (A)

TC = 80 °C
30
tp =10µs
10 1
TC = 100 °C
tp =100µs
20

tp =1ms
10 0
Single pulse 10 Rectangular current shape
TC = 25 °C (Duty cycle = 0.5, VCC = 400 V,
TJ ≤ 175 °C RG = 10 Ω, VGE = 0 to 15 V,
10 -1 VGE = 15 V 0 TJ = 175 °C)
10 0 10 1 10 2 VCE (V) 10 0 10 1 10 2 f (kHz)

DS10274 - Rev 3 page 8/15

 STGFW20V60DF
Electrical characteristics (curves)

Figure 25. Thermal impedance for IGBT

ZthTOF3T_A
K
δ=0.5

0.2

0.1 0.05
-1
10
0.02

Zth = k*RthJC
0.01
δ = tp/t

Single pulse
tp
t
-2
10 -2 -1
tp (s)
-5 -4 -3
10 10 10 10 10 10

Figure 26. Thermal impedance for diode

Zth = k*RthJC
δ = tp/t

tp
t

DS10274 - Rev 3 page 9/15

 STGFW20V60DF
Test circuits

3 Test circuits

Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit

A A
C
L=100 µH k
G k

E B
B
C 3.3 1000 VCC
µF µF
k
G D.U.T
k
+ RG E

k
-
k

AM01504v1 AM01505v1

Figure 29. Switching waveform Figure 30. Diode reverse recovery waveform

90%

VG 10%

90%

VCE 10%
tr(Voff)
tcross
25
90%

IC td(off)
10%
td(on) tf
tr(Ion)
ton toff

AM01506v1

DS10274 - Rev 3 page 10/15

 STGFW20V60DF
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-3PF package information

Figure 31. TO-3PF package outline

7627132_6

DS10274 - Rev 3 page 11/15

 STGFW20V60DF
TO-3PF package information

Table 7. TO-3PF mechanical data

mm
Dim.
Min. Typ. Max.

A 5.30 5.70
C 2.80 3.20
D 3.10 3.50
D1 1.80 2.20
E 0.80 1.10
F 0.65 0.95
F2 1.80 2.20
G 10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10.00 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15.00
N 1.80 2.20
R 3.80 4.20
Dia 3.40 3.80

DS10274 - Rev 3 page 12/15

 STGFW20V60DF

Revision history

Table 8. Document revision history

Date Version Changes

28-Mar-2014 1 Initial release

Updated Table 1: "Device summary".
14-Feb-2017 2
Minor text changes
Updated Features in cover page.
Updated Section 1 Electrical ratings.

19-Mar-2021 3 Updated Figure 1. Power dissipation vs case temperature, Figure 2. Collector current vs
case temperature, Figure 23. Safe operating area and added Figure 24. Collector current vs
switching frequency.
Minor text changes.

DS10274 - Rev 3 page 13/15

 STGFW20V60DF
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

DS10274 - Rev 3 page 14/15

 STGFW20V60DF

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DS10274 - Rev 3 page 15/15