STGP30H60DF

Datasheet

Trench gate field-stop 600 V, 30 A high speed IGBT

Features
• High speed switching
TAB
• Tight parameters distribution
• Safe paralleling
3 • Low thermal resistance
2
1 • Short circuit rated
TO-220 • Ultrafast soft recovery antiparallel diode

Applications
• Inverter
• UPS
• PFC

Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. This IGBT series offers the optimum compromise between conduction
and switching losses, maximizing the efficiency of high frequency converters.
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter
distribution result in safer paralleling operation.

Product status link

STGP30H60DF

Product summary

Order code STGP30H60DF

Marking GP30H60DF
Package TO-220
Packing Tube

DS8709 - Rev 4 - September 2020 www.st.com

For further information contact your local STMicroelectronics sales office.
 STGP30H60DF
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 600 V

Continuous collector current at TC = 25 °C 60

IC A
Continuous collector current at TC = 100 °C 30

ICP(1) Pulsed collector current 120 A

VGE Gate-emitter voltage ±20 V

Continuous forward current at TC = 25 °C 60

IF A
Continuous forward current at TC = 100 °C 30

IFP(1) Pulsed forward current 120 A

PTOT Total power dissipation at TC = 25 °C 260 W

Tstg Storage temperature range - 55 to 150 °C

TJ Operating junction temperature range - 55 to 175 °C

1. Pulse width limited by maximum junction temperature and turn-off within RBSOA.

Table 2. Thermal data

Symbol Parameter Value Unit

Thermal resistance junction-case IGBT 0.58

RthJC °C/W
Thermal resistance junction-case diode 2.5
RthJA Thermal resistance junction-ambient 62.5 °C/W

DS8709 - Rev 4 page 2/14

 STGP30H60DF
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter breakdown
V(BR)CES VGE = 0 V, IC = 2 mA 600 V
voltage
VGE = 15 V, IC = 30 A 2.0 2.4
Collector-emitter saturation
VCE(sat) V
voltage VGE = 15 V, IC = 30 A, TJ = 175 °C 2.4

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 600 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance - 3600 - pF

Coes Output capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V - 130 - pF

Cres Reverse transfer capacitance - 65 - pF

Qg Total gate charge - 105 - nC

VCC = 400 V, IC = 30 A, VGE = 0 to 15 V
Qge Gate-emitter charge - 30 - nC
(see Figure 20. Gate charge test circuit)
Qgc Gate-collector charge - 35 - nC

DS8709 - Rev 4 page 3/14

 STGP30H60DF
Electrical characteristics

Table 5. Switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VCE = 400 V, IC = 30 A, 50 - ns

tr Current rise time RG = 10 Ω, VGE = 15 V 15 - ns

(see Figure 19. Test circuit for inductive
(di/dt)on Turn-on current slope 1600 - A/µs
load switching)
td(on) Turn-on delay time VCE = 400 V, IC = 30 A, 47 - ns

tr Current rise time RG = 10 Ω, VGE = 15 V, TJ = 175 °C 17 - ns

(see Figure 19. Test circuit for inductive
(di/dt)on Turn-on current slope 1400 - A/μs
load switching)
tr(Voff) Off voltage rise time VCE = 400 V, IC = 30 A, 20 - ns

td(off) Turn-off delay time RG = 10 Ω, VGE = 15 V 160 - ns

(see Figure 19. Test circuit for inductive
tf Current fall time 60 - ns
load switching)
tr(Voff) Off voltage rise time VCE = 400 V, IC = 30 A, 22 - ns

td(off) Turn-off delay time RG = 10 Ω, VGE = 15 V, TJ = 175 °C 146 - ns

(see Figure 19. Test circuit for inductive
tf Current fall time 88 - ns
load switching)

tsc Short circuit withstand time VCC ≤ 360 V, VGE = 15 V 3 6 - µs

Table 6. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon(1) Turn-on switching losses VCE = 400 V, IC = 30 A, - 0.35 - mJ

Eoff(2) Turn-off switching losses RG = 10 Ω, VGE = 15 V - 0.40 - mJ

(see Figure 19. Test circuit for inductive
Ets Total switching losses load switching) - 0.75 - mJ

Eon(1) Turn-on switching losses VCE = 400 V, IC = 30 A, - 0.84 - mJ

Eoff (2)
Turn-off switching losses RG = 10 Ω, VGE = 15 V, TJ = 175 °C - 0.61 - mJ
(see Figure 19. Test circuit for inductive
Ets Total switching losses load switching) - 1.45 - mJ

1. Energy losses include reverse recovery of the diode.

2. Turn-off losses include also the tail of the collector current.

DS8709 - Rev 4 page 4/14

 STGP30H60DF
Electrical characteristics

Table 7. Collector-emitter diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

IF = 30 A - 2.0 2.3
VF Forward on-voltage V
IF = 30 A, TJ = 175 °C - 1.5

trr Reverse recovery time - 110 ns

Vr = 400 V, IF = 30 A,
Qrr Reverse recovery charge - 136 nC
diF/dt = 100 A/μs
Irrm Reverse recovery current - 2.5 A

trr Reverse recovery time - 190 ns

Vr = 400 V, IF = 30 A,
Qrr Reverse recovery charge - 506 nC
diF/dt = 100 A/μs, TJ = 175 °C
Irrm Reverse recovery current - 5.3 A

DS8709 - Rev 4 page 5/14

 STGP30H60DF
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Output characteristics (TJ = 25 °C) Figure 2. Output characteristics (TJ = 175 °C)

IC AM17360v1 IC AM17361v1
(A) VGE=15V (A) VGE=15V
11V
100 100 11V

13V
80 80 13V

60 60
9V
40 40

9V 20
20

7V
0 0
0 1 2 3 4 VCE(V) 0 1 2 3 4 VCE(V)

Figure 3. Transfer characteristics Figure 4. Normalized VGE(th) vs junction temperature

IC AM17362v1 AM17369v1
VGE(th)
(A) TJ=-40°C norm

100 VCE=5V TJ=175°C

1.0
TJ=25°C
80
0.9

60
0.8
40

20 0.7

0 0.6
7 8 9 10 11 VGE(V) -50 0 50 100 150 TJ(°C)

Figure 5. Power dissipation vs case temperature Figure 6. Collector current vs switching frequency

PTOT AM17364v1 IC
(W) (A)

240
60
200

50
160

120
40
80
30
40 rectangular current shape,
(duty cycle=0.5, Vcc= 400V Rg=10ohm,Vge=0/15V, Tj=175 °C)

0 20
0 25 50 75 100 125 150 TCASE(°C)
1 10 f(kHz)

DS8709 - Rev 4 page 6/14

 STGP30H60DF
Electrical characteristics (curves)

Figure 7. VCE(sat) vs junction temperature Figure 8. VCE(sat) vs collector current

AM17366v1 AM17367v1
VCE(sat) VCE(sat)
(V) VGE=15V (V) VGE=15V
3.2
3.0
3.0 TJ=175°C
2.8
IC=60A 2.8
2.6 TJ=25°C
2.6
2.4 2.4
2.2 2.2
IC=30A
2.0 2.0
1.8
1.8
IC=15A 1.6 TJ=-40°C
1.6
1.4
1.4 1.2
1.2 1.
-50 0 50 100 150 TJ(°C) 10 20 30 40 50 IC(A)

Figure 9. Forward bias safe operating area Figure 10. Thermal impedance
IC AM17370v1 ZthTO2T_B
(A) K
δ=0.5

0.2
it
lim

100 1µs
at)

0.1 0.05
E(s
VC

-1
10
0.02
Zth=k Rthj-c
10 0.01 δ=tp/t
100µs

(single pulse TC=25°C,

Single pulse tp

TJ<175°C, VGE=15V) 1ms -2

t

10 -5
1 10 10
-4
10
-3
10
-2
10
-1
tp (s)
1 10 100 VCE(V)

Figure 11. Gate charge vs gate-emitter voltage Figure 12. Capacitance variations
AM17372v1
VGE C (pF)
(V) VCC= 400V, IC=30A
16

14

12 1000

10

8
6 100

4
2
0 10
0 50 100 Qg(nC) 0.1 1 10 VCE(V)

DS8709 - Rev 4 page 7/14

 STGP30H60DF
Electrical characteristics (curves)

Figure 13. Collector current vs case temperature Figure 14. Diode VF vs forward current
AM17363v1
IC AM17368v1
(A) VF (V)
VGE>15V
60 2.6 TJ=-40°C
TJ<175°C
2.4
50
2.2
40 TJ=25°C
2.0
30
1.8
20
1.6 TJ=175°C
10 1.4

0 1.2
0 25 50 75 100 125 150 TCASE(°C) 15 20 25 30 35 40 45 50 55 IF(A)

Figure 15. Switching losses vs gate resistance Figure 16. Switching losses vs collector current
AM17374v1 AM17375v1
E (µJ) E (µJ)
VCC= 400V, VGE=15V VCC= 400V, VGE=15V
IC= 30A, TJ=175°C Eon
RG= 10Ω, TJ=175°C
1500 2000
Eon

1250 1600

1000 Eoff 1200 Eoff

750 800

500 400

250 0
0 10 20 30 40 RG(Ω) 15 25 35 45 55 IC(A)

Figure 17. Switching energy vs temperature Figure 18. Short circuit time & current vs. VGE
AM17376v1 AM17377v1
E (µJ) tsc (µs) ISC(A)
VCC= 400V, VGE=15V Eon VCC= 360V, RG= 10Ω
RG= 10Ω, IC=30A ISC 450
800
20 400
tSC
350
700
15 300
600 Eoff 250
10 200
500
150
5 100
400
50
300 0 0
25 50 75 100 125 150 TJ(°C) 8 10 12 14 VGE(V)

DS8709 - Rev 4 page 8/14

 STGP30H60DF
Test circuits

3 Test circuits

Figure 19. Test circuit for inductive load switching Figure 20. Gate charge test circuit

A A
C
L=100 µH k
G k

E B
B
C 3.3 1000 VCC
µF µF
k
G D.U.T
k
+ RG E

k
-
k

AM01504v1 AM01505v1

Figure 21. Switching waveform Figure 22. Diode reverse recovery waveform

90%

VG 10%

90%

VCE 10%
tr(Voff)
tcross
25
90%

IC td(off)
10%
td(on) tf
tr(Ion)
ton toff

AM01506v1

DS8709 - Rev 4 page 9/14

 STGP30H60DF
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220 type A package information

Figure 23. TO-220 type A package outline

0015988_typeA_Rev_23

DS8709 - Rev 4 page 10/14

 STGP30H60DF
TO-220 type A package information

Table 8. TO-220 type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
Slug flatness 0.03 0.10

DS8709 - Rev 4 page 11/14

 STGP30H60DF

Revision history

Table 9. Document revision history

Date Revision Changes

14-Oct-2011 1 Initial release.

03-Oct-2012 2 Document status promoted from target specification to preliminary data.
Document status promoted from preliminary data to production data.
20-Mar-2013 3 Added new root part number STGF30H60DF in TO-220FP package.
Added new root part number STGW30H60DF in TO-247 package.
The part numbers STGB30H60DF, STGF30H60DF and STGW30H60DF have been moved to
a separate datasheet and the document has been updated accordingly.
24-Sep-2020 4 Updated Table 5. Switching characteristics (inductive load) and Table 7. Collector-emitter
diode.
Minor text changes.

DS8709 - Rev 4 page 12/14

 STGP30H60DF
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

DS8709 - Rev 4 page 13/14

 STGP30H60DF

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DS8709 - Rev 4 page 14/14