NIKO-SEM P-Channel Logic Level Enhancement P4004ED

Mode Field Effect Transistor TO-252(DPAK)

Halogen-Free & Lead-Free

D
PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
G 1. GATE
-40V 40mΩ -21A 2. DRAIN
3. SOURCE

S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS ±20 V
TC = 25 °C -21
Continuous Drain Current ID
TC = 70 °C -17
1
A
Pulsed Drain Current IDM -70
Avalanche Current IAS -27
2
Avalanche Energy L = 0.1mH EAS 36 mJ
TC = 25 °C 30
Power Dissipation PD W
TC = 70 °C 20

Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS

Junction-to-Case RθJc 4.1 °C / W

Junction-to-Ambient RθJA 40 °C / W
1
Pulse width limited by maximum junction temperature.
2
VDD = -20V . Starting TJ = 25˚C.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -40
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2.0 -2.5 -3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
VDS = -32V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = -30V, VGS = 0V, TJ = 125 °C 10
1
On-State Drain Current ID(ON) VDS = -5V, VGS = -10V -70 A

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NIKO-SEM P-Channel Logic Level Enhancement P4004ED
Mode Field Effect Transistor TO-252(DPAK)
Halogen-Free & Lead-Free

VGS = -5V, ID = -8A 65 73

Drain-Source On-State RDS(ON) VGS = -7V, ID = -8A 35 50 mΩ
1
Resistance
VGS = -10V, ID = -10A 30 40
1
Forward Transconductance gfs VDS = -10V, ID = -10A 20 S
DYNAMIC
Input Capacitance Ciss 1090
Output Capacitance Coss VGS = 0V, VDS = -20V, f = 1MHz 175 pF
Reverse Transfer Capacitance Crss 91
2
Total Gate Charge Qg(VGS = -10V) 17
2
Total Gate Charge Qg(VGS =-4.5V) 8.5
2
VDS = 0.5V(BR)DSS, ID = -18A nC
Gate-Source Charge Qgs 5.5
2
Gate-Drain Charge Qgd 3
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 4.95 Ω
2
Turn-On Delay Time td(on) 6
2
Rise Time tr VDS = -20V, RL = 2Ω 16
nS
2
Turn-Off Delay Time td(off) ID ≅ -10A, VGS = -10V, RGS = 6Ω 26
2
Fall Time tf 10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS -21 A
1
Forward Voltage VSD IF = -1A, VGS = 0V -1 V
Reverse Recovery Time trr 15.5 nS
IF = -10 A, dlF/dt = 100A / µS
Reverse Recovery Charge Qrr 7.9 nC
1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.
2
Independent of operating temperature.

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NIKO-SEM P-Channel Logic Level Enhancement P4004ED
Mode Field Effect Transistor TO-252(DPAK)
Halogen-Free & Lead-Free

Output Characteristics On-Resistance VS Drain Current

60 0.09
V GS = - 10V V GS = - 7V
-ID, Drain-To-Source Current(A)

RDS(ON)ON-Resistance(OHM)
0.08
50 VGS = - 5V
0.07
40
V GS = - 5V 0.06
VGS = -7V
0.05
30
V GS = - 4.5V
VGS = -10V
0.04
20
0.03

10 0.02

0.01
0 10 20 30 40 50
0 1 2 3 4 5
-VDS, Drain-To-Source Voltage(V) -ID , Drain-To-Source Current

On-Resistance VS Gate-To-Source On-Resistance VS Temperature

RDS(ON) ╳ 2.0
0.15
RDS(ON)ON-Resistance(OHM)

RDS(ON) ╳ 1.8
RDS(ON)ON-Resistance(OHM)

0.12
RDS(ON) ╳ 1.6

RDS(ON) ╳ 1.4
0.09
RDS(ON) ╳ 1.2
0.06
RDS(ON) ╳ 1.0

RDS(ON) ╳ 0.8
0.03
RDS(ON) ╳ 0.6 V GS= -10V
ID = -10A ID = -40A
0 RDS(ON) ╳ 0.4
0 2 4 6 8 10
-50 -25 0 25 50 75 100 125 150
-VGS, Gate-To-Source Voltage(V)
TJ , Junction Temperature(˚C)

Transfer Characteristics Gate charge Characteristics

60 VDS= -10V
10 Characteristics
-VGS , Gate-To-Source Voltage(V)
-ID, Drain-To-Source Current(A)

Tj =125° C
50
8
ID= -18A
40
6
V DS= -20V
30

4
20

Tj =25° C
10 2

Tj =-20° C
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0
0 5 10 15 20
-VGS, Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC)

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NIKO-SEM P-Channel Logic Level Enhancement P4004ED
Mode Field Effect Transistor TO-252(DPAK)
Halogen-Free & Lead-Free

Capacitance Characteristic Body Diode Forward Voltage VS Source current

1.50E+03
1 .0 E + 0 2

1 .0E + 01
1.20E+03
C , Capacitance(pF)

-IS , Source Current(A)

Ciss
1 .0 E + 0 0

9.00E+02
1.0E -01
T J = 1 5 0° C T J = 2 5° C
6.00E+02 1 .0 E -0 2

1.0E -03
3.00E+02

Coss 1 .0 E -04
Crss
0.00E+00 1 .0E -0 5
0 5 10 15 20 25 30 0.0 0 .2 0.4 0 .6 0 .8 1 .0 1 .2

-VDS, Drain-To-Source Voltage(V) -VSD, Source-To-Drain Voltage(V)

Safe Operating Area Single Pulse Maximum Power Dissipation

1000
1000
Ope ration in This Are a is SINGLE PULSE
Lim ite d by RDS(ON) RθJC = 4.1˚
˚ C/W
100
800 T C =25˚
˚C
-ID , Drain Current(A)

↓
Power(W)

10 1m s 600

10m s
1 400
NOTE :
100m s
1.V GS= -10V
1s
2.T C=25˚
˚C
0.1 3.RθJC =4.1˚
˚ C/W 10s 200
DC
4.Single Puls e

0.01 0
0.1 1 10 100 1E-04 0.001 0.01 0.1 1 10 100
-VDS, Drain-To-Source Voltage(V) Single Pulse Time(s)

Transient Thermal Response Curve

Transient Thermal Resistance
r(t) , Normalized Effective

T1 , Square Wave Pulse Duration[sec]

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