JNNCE, Shivamogga ECE

PART-B : Simulation using EDA software

(EDWinXP, PSpice, MultiSim, Proteus, CircuitLab or any equivalent tool)
Experiment No. 1
Input and Output characteristics of BJT Common emitter configuration
and evaluation of parameters.
Aim: Conduct experiment to study the input and output characteristics of an
BJT common emitter configuration and determine transistor parameters.
Components required:
SI No. Particulars Range Quantity
1 Transistor (NPN) Q2N2222 1
2 Resistors 1K 1
100K 1
3 Decade Resistance box 1- 1
4 Bread board - 1
5 Variable power supply (0-30v) 2
6 Voltmeter (0-30v) 1
7 Ammeter (0-200mA) 1

Bipolar Junction Transistor (BJT):

IC IC
C IC C IC

n C p C
+ -
B B B B
p VCE n VCE
IB IB - IB IB - +
+
n p
VBE
- E
VBE + E
E IE E
IE IE
IE

A Bipolar Junction Transistor, or BJT is a three terminal device having two PN-
junctions connected together in series. Each terminal is given a name to identify
it and these are known as the Emitter (E), Base (B) and Collector (C). There
are two basic types of bipolar transistor construction, NPN and PNP, which
basically describes the physical arrangement of the P-type and N-type
semiconductor materials from which they are made. Bipolar Transistors are
"CURRENT" Amplifying or current regulating devices that control the amount of
current flowing through them in proportion to the amount of biasing current
applied to their base terminal. The principle of operation of the two transistor

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types NPN and PNP, is exactly the same the only difference being in the biasing
(base current) and the polarity of the power supply for each type.

Transistor Configurations:
There are three possible configurations possible when a transistor is connected
in a circuit: (a) Common emitter, (b) Common base, (c) Common collector. We
will be focusing on the first one configuration in this experiment. The behaviour
of a transistor can be represented by dc current-voltage (I-V) curves, called the
static characteristic curves of the device. The three important characteristics of
a transistor are: (i) Input characteristics, (ii) Output characteristics. These
characteristics give information about various transistor parameters, e.g. input
and out dynamic resistance, current amplification factors, etc.

Common Emitter Transistor Characteristics:

In a common emitter configuration, emitter is common to both input and output.
(1) Input Characteristics: The variation of the base current I B with the
base-emitter voltage VBE keeping the collector-emitter voltage VCE fixed,
gives the input characteristic in CE mode.
Input Dynamic Resistance (ri): This is defined as the ratio of change
BE) to the resulting change in base current
B) at constant collector-emitter voltage (VCE). This is dynamic and it
can be seen from the input characteristic, its value varies with the
operating current in the transistor:

(2) Output Characteristics: The variation of the collector current I C with

the collector-emitter voltage VCE is called the output characteristic. The
plot of IC versus VCE for different fixed values of IB gives one output
characteristic. Since the collector current changes with the base current,
there will be different output characteristics corresponding to different
values of IB.
Output Dynamic Resistance (ro): This is defined as the ratio of change
in collector- CE C)
at a constant base current IB.

Common emitter current gain : This is defined as the ratio of the

change in collector current (IC) to the change in base current (IB)at a
constant collector-emitter voltage (VCE) when the transistor is in active
state.

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Circuit Diagram:

Observations:
Input Characteristics
VCE= 10V VCE= 15V
VBE (V) IB(µA) VBE (V) IB(µA)

Input Characteristics:

IB( A)

VCE=5v
8
10v
7
15v
6

1 IB
VBE
0 VBE(v)
0.2 0.4 0.6 0.8

Calculations:
Dynamic input resistance of transistor in CE configuration

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Procedure:
1. Now configure CE circuit using the NPN transistor as per the circuit
diagram. Use RB C
2. For input characteristics, first fix the voltage VCE by adjusting VCC to the
minimum possible position like 5V. Now vary the voltage VBE slowly (say,
in steps of 0.5V) by varying VBB and measure VBE. If VCE varies during
measurement bring it back to the set value to determine IB, measure ri.
3. Repeat the above step for another value of VCE say, 10V.

Observations:
Output Characteristics
IB= 50µA IB= 40µA IB=30µA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Output Characteristics:
IC(mA)

7
Saturation
region Active region
6

5 IC
VCE
4

VCE(v)
-1 0 5 10 15 10

Cutoff region

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Calculations:
The dynamic output resistance ro and current amplification factor of transistor
in CE configuration:

Procedure:
1. For output characteristics, first fix IB = 10µA, i.e. VBE = 1v. By adjusting
VCC, vary the collector voltage VCE in steps of say 1V and measure VCE
and the corresponding IC using multimeters. If needed vary VCE in and
measure both VCE and IC measure ro.
2. Repeat the above step for at least 5 different values of I B by adjusting
VBB. You may need to adjust VBB continuously during measurement in
order to maintain a constant IB.
3. Plot the input and output characteristics by using the readings taken
above and determine the input and output dynamic resistance. V across
the resistor RB and use the relation IB = VBE/RB.

Result: Dynamic input resistance ri

Dynamic output resistance ro
Common emitter current gain :

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