MILITARY INSTITUTE OF SCIENCE AND TECHNOLOGY

Department of Aeronautical Engineering

COURSE NO.: AEAV 204 (Fundamentals of Electronics Sessional)
EXPT. NO.-04

NAME OF THE EXPERIMENT: STUDY OF N-P-N CE (Common Emitter)

TRANSISTOR CHARACTERISTICS.

OBJECTIVE: To determine the CE characteristics of a transistor.

MATERIALS REQUIRED
N-P-N Transistor (C829 or C828) one piece
Resistors 2k,1k one piece each
Multimeter two pieces
Bread board one piece
DC power supply 2 piece
Connecting wire as reqr

THEORY
Transistor has two p-n junctions (see figure below). One junction is called emitter junction and
other is called collector junction. When transistor is used as an amplifier, it is operated in active
mode. In active mode, emitter junction is forward biased and collector junction is reverse biased.

JnE JnC

p nC
JpE nE

iC
E
n p n
iE
C

C
iB
B
B E

Fig. 1 Schematic diagram of N-P-N transistor

Emitter current is given by

IE = InE + IpE
we can also write
IE = IC + IB = [(1 + )/]IC
Where  = IC /IB is called common emitter current gain.

In good transistor IC>>IB i.e. >>1.

IC can also be expressed as IC =  IE. Where  = /(1+) .  is called common base current gain.

For good transistor,  is close to unity.

Proper dc biasing of a transistor is a prerequisite for proper operation as an amplifier. The

purpose of the biasing is to fix the IC (dc) and VCE (dc). But IC is a function of temperature, VBE
and. It is always desirable to design a biasing circuit where IC is insensitive to change in .

When E-B junction is forward biased and C-B junction is reverse biased, the transistor operates
in active mode. For saturation mode of operation, both junctions are forward-biased. Cut-off
region operation requires that both E-B and C-B junctions be reverse biased. The inverted active
operation occurs when E-b is reverse-biased and C-B is forward biased.
 Fig. 2 Input and Output characteristics of Common- Emitter Transistor

CIRCUIT DIAGRAMS :

IC

IB
2KΩ
1K Ω

VBB (0-5) VCC (0-20)

Fig. 3 Circuit Diagram of Common- Emitter Transistor

In the experiment, we will be using C829 or C828 transistor which is a N-P-N transistor.

Fig. 4 Pin diagram of C828 N-P-N transistor

PROCEDURE

For Input Characteristics of CE:

Construct the circuit shown in Fig. 1(b)
Set VCC to 10V. Vary VBB Measure the value of VBE & IB (µA).

VBB VBE VR IB VCC

0.1V
0.3V
0.5V
0.7V
1V 10V
2V
3V
4V
5V

Now, set VCC to 5V. Change VEE in former manner and Measure the value of VBE & IB until the
IB is saturated.

For Output Characteristics of CE:

Construct the circuit shown in Fig. 1(b)
Set IB 2 µA or VBB=.5V. Vary VCC Measure the value of VCE & IC (mA) until the IC is saturated.

VCC VCE VR IC VBB

0.1V
0.3V
0.5V
0.7V
1V
2V .5V
3V
4V
5V
7V
9V

Now, set VBB to .7V. Change VCC in former manner and Measure the value of VCE & IC Until IC
will be saturated or constant.

REPORT

1. (a) Plot output and input characteristics of CE transistor.

(b) Calculate the early voltage from the output characteristic.

(c) Discuss the effect of changing  on the output characteristics.

(d) Discuss the effect of changing VCE on the input characteristics

2. What are the role of the 2K and 1K fixed resistors in the circuits?

3. Plot (=Ic/IB) as a function of IC for VCE = 7.5V.