Experiment No.

09:
Title: Determination of the characteristic curve of a Bipolar Junction
Transistor.

Objective: The objective of experiment is to become familiar with bipolar junction transistors (BJTs).
The handout introduces the properties and behavior of BJTs. Throughout the experiment,the output
characteristics of a common-emitter based BJT circuits will be obtained. Thetransistor will be applied as
an amplifier. Furthermore, the phase relation between the input voltage and the output voltage ofa
common-emitter amplifier circuit will be investigated.

Theory:
A BJT is a three terminal semiconductor device. It is widely used in discrete circuits as well as in
integrated circuits. The main applications of BJTs are analog circuits. For example, BJTs are used for
amplifiers in particular for high-speed amplifiers. BJTs can be used for digital circuits as well, but most of
the digital circuits are nowadays realized by field effect transistors (FETs). There are three operating
modes for BJTs, the active mode (amplifying mode), the cut-off mode and the saturation mode. To apply
BJT as an amplifier, the BJT has to operate in the active mode. To apply a BJT as a digital circuit
element, the BJT has to operate in the cut-off mode and the saturation mode.

Device structure of bipolar junction transistors Each BJT consist of two anti serial connected diode. The
BJT can be either implemented as a NPN or a PNP transistor. In both cases, the center region forms the
base (B) of the transistor, while the external regions form the collector (C) and the emitter (E) of the
transistor. External wire connections to the p and n regions (transistor terminals) are made through metal
(e.g. Aluminum) contacts. A cross section of the two types of BJTs consisting of an emitter-base junction
and a collector-base junction is shown in figure 5.1. NPN or PNP transistors are called bipolar transistors
because both types of carriers (electrons and holes) contribute to the overall current.

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Input-Output Characteristics Curve for Common Emitter Configuration:

Equipment List:
1. Bread Board.
2. DC power supply.
3. Multimeter
4. Transistor – C828.
5. Resistor – 1K and 10K.

Experimental Procedure:
1. Identify the terminals of the transistor.
2. Make the circuit connections as shown in the above figure.
3. For input characteristics first fix the voltage VCE and vary the voltage VBE slowly in steps of 0.5V.
Note the value of current IB in each step in the data table shown.
4. For output characteristics, first open the input circuit (i. e. to make IB = 0). Vary the collector voltage
VCE in steps of 0.5V. Note the Collector current in the data table for each collector voltage. This
current is the reverse saturation current ICEO, and the magnitude of this will be small. Now close the
input circuit and fix the base current IB at 50μA by varying VBB. Vary the voltage VCE with the help
of VCC. Note current IC in each step. Repeat the process for other values of IB. Be careful not to go
beyond the maximum ratings of the transistor.
5. Plot the input and output characteristics.

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Data Table:
1. Input Characteristic
VCE = VCE =
Sl. No. 1V 5V VCE = 10V
VBE IB VBE IB VBE IB

2. Output Characteristic:
IB = 0 μA IB = 50μA IB = 100μA IB = 300μA
Sl. No.
VCE IC VCE IC VCE IC VCE IC

Report writing:
1. Plot the input and output characteristics curve.
2. Calculate the parameters of the transistor.

Discussion:
a) What has been taught in this experiment?
b) Discuss the causes of error.

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