CIRCUIT DIAGRAM

Fig:- Circuit diagram for common emitter transistor

Fig:- Circuit diagram for common base transistor

Fig:-Cross section view of transistor

Fig:-Pin diagram of a transistor

EXPERIMENT NO: DATE:-

CHARACTERISTICS OF COMMON EMITTER AND COMMON BASE CONFIGURATION

OF BIPOLAR JUNCTION TRANSISTOR

Aim:-
To study the input and output characteristics of BJT in common emitter and common base
configuration.

Apparatus required:
SI.No Name Quantity
1. Transistor(Q2N22220 1
2. Resistor(100Ω) 4
3. Dual DC regulated power supply(0-30V) 2
4. Digital Ammetrs 2
5. Digital Voltmeters 2
6. Connecting wires -----

Formulae
1. Input Resistance =

2. Output Resistance =

3. Forward current gain=

4. Reverse Voltage gain=

Model Graph:-

(1) Input and Output characteristics for common emitter npn transistor.

Fig:-Input characteristics of CE configuration Fig:-Output characteristics of CE configuration

(2) Input and Output characteristics for common Base npn transistor.

Fig:-input characteristics for CB configuration Fig:-Output characteristics of CB configuration

PROCEDURE:-

(1) Input characteristics of CE npn transistor.

1. Connect the circuit as shown in the circuit diagram.

2. Keep output voltage VCE = 0V by varying VCC.
3. Varying VBB gradually, note down base current IB and base-emitter voltage VBE.
4. Step size is not fixed because of non linear curve. Initially vary VBB in steps of 0.1V. Once the
current starts increasing vary VBB in steps of 1V up to 12V.
5. Repeat above procedure (step 3) for VCE= 5V.

(2) Output characteristics of CE npn transistor.

1. Connect the circuit as shown in the circuit diagram.

2. Keep emitter current IB= 5mA by varying VBB.
3. Varying VCC gradually in steps of 1V up to 12V and note down collector current IC and Collector-
Emitter Voltage VCE.
4. Repeat above procedure (step 3) for IB= 2mA, 10mA.

(3) Input characteristics for common base npn transistor.

1. Connect the circuit as shown in the circuit diagram.

2. Keeping output voltage VCB = 0V by varying VCC.
3. Varying VEE gradually, note down emitter current IE and emitter -base voltage(VBE).
4. Step size is not fixed because of nonlinear curve. Initially vary VEE in steps of 0.1 V.
once the current starts increasing varyVEE in steps of 1V up to 12V.
5. Repeat above procedure (step 3) for VCB=4V.

(4) Output characteristics for common base npn transistor.

1. Connect the circuit as shown in the circuit diagram.

2. Keeping emitter current IE = 5mA by varying VEE.
3. Varying VCC gradually in steps of 1V up to 12V and note down the collector current IC
and collector -base voltage (VCB)
4. Repeat above procedure (step 3) for IE=10mA.
TABULATION:

(1) Input characteristics for common emitter npn transistor.

VCE = VCE= VCE=

VBE(V) IB(mA) VBE(V) IB(mA) VBE(V) IB(mA)

(2) Output characteristics for common emitter npn transistor

IB= IB= IB=

VCE(V) IC(mA) VCE(V) IC(mA) VCE(V) IC(mA)
(3) Input characteristics of common base npn transistor.

VCB = VCB = VCB =

VBE(V) IE(mA) VBE(V) IE(mA) VBE(V) IE(mA)

(4) Output characteristics of common base transistor.

IE= IE= IE=

VCB(V) IC(mA) VCB(V) IC(mA) VCB(V) IC(mA)
Inference:-

Result: