Introduction – Underlying Science

 PN Junction
 is a junction formed by P-type and
N-type semiconductors together in
very close contact.

What happens at the junction?

 Electrons(+) from n(-)

region diffuse to occupy
holes(-) in p(+) region.
 Thin depletion region
forms near junction.
Introduction – Underlying Science

 Forward bias
 -V pumps electrons into the N-region.
 +V pumps more holes into the P-region.
 Excess of charge in P and N region will
apply pressure on the depletion region
and will make it shrink.
 → current flows
External Energy

 Backward bias
 -V sucked out electrons from N-region.
 +V sucked out holes from P-region.
 The depletion layer widens and it
occupies the entire diode(p-n).
 → current doesn’t flow
 Introduction – Types of Transistor

 Transistor are categorized by

 Semiconductor material: germanium, silicon, gallium arsenide, etc.
 Structure: BJT, FET, IGFET (MOSFET), IGBT
 Polarity: NPN, PNP (BJTs); N-channel, P-channel (FETs)
 Maximum power rating: low, medium, high
 Maximum operating frequency: low, medium, high
 Application: switch, audio, high voltage, etc.
 Physical packaging: through hole, surface mount, ball grid array, etc.
 Amplification factor Various Types of Transistor:
http://en.wikipedia.org/wiki/Category:Transistor_types

 General Purpose Transistors

 Bipolar Junction Transistor (BJT)
 Field Effect Transistors (FET)
 Power Transistors
 “Transistor” Part 2

11 Introduction to Transistor
(Speaker: Sung-bum Kang)

22 Bipolar Junction Transistor

(Speaker: Keun Jae Kim)

33 Field Effect Transistor

(Speaker: Hongchul Sohn)

44 Power Transistor
(Speaker: Wenwei Xu)

55 Applications of Transistor
(Speaker: Wenwei Xu)
 BJT Introduction
NPN
 3 Terminals
 Base (B)
 Collector (C)
 Emitter (E)
 2 Types: NPN, PNP
 Currents flow in opposite
direction
 NPN: PNP
 BE forward biased

 BC reverse biased

 PNP:
 BE reverse biased

 BC forward biased
 BJT Characteristics

 IC is controlled by IB (Current Control)

 β (beta) is amplification factor for
transistor
 Typical value of is β 20 ~ 200
iE = iC + iB
iC = βiB

VBE = VB – VE
VCE = VC - VE

Georgia Institute of Technology 6

 BJT Operating Regions

 Operating Regions
 BJT Operating Regions

 Operating Regions

Operating Region Parameters Mode

VBE < Vcut-in
Cut Off VCE > Vsupply Switch OFF
IB = IC = 0
VBE = Vcut-in
Linear Vsat < VCE < Vsupply Amplification
IC = β*IB
VBE = Vcut-in,
Saturated VCE < Vsat Switch ON
IB > IC,max, IC,max > 0
 BJT Operating Regions
1) Cutoff Region:
 VBE < Vcut-in, iB = 0 iC = 0, VCE > Vsupply
2) Active / Linear Region:
 VBE = Vcut-in, iB > 0 iC = βiB, Vsat < VCE < Vsupply
3) Saturation Region:
 VBE = Vcut-in, iB > iC,max iC,max, VCE < Vsat
Vsupply

Vin

Georgia Institute of Technology 9

 BJT as Amplifier
 Question: What is the minimum Vin that can use the transistor as an
amplifier?
Vsupply – iC *RC – VCE=0
Given:
• RB = 10 kΩ iC = (Vsupply – VCE) / RC
• RC = 1 kΩ
Set VCE = Vsat = 0.2V
• β = 100
• VSupply = 10 V iC = (10 – 0.2) / 1000 = 9.8mA
• Vcut-in = 0.7 V
• Vsat = 0.2 V
iC = βiB
iB = iC / β = 0.0098/100 = 0.098mA

RC
Vin - iB*RB – VBE = 0
Vin = iB*RB + VBE
Vin VSupply
Set VBE = Vcut-in = 0.7V
Vin = 0.098*(10-3)*10000 + 0.7V
RB
Vin = 1.68V or greater.
 BJT as Switch

 From
3rd Exercise

 Turns
on/off coils
digitally
 “Transistor” Part 3

11 Introduction to Transistor
(Speaker: Sung-bum Kang)

22 Bipolar Junction Transistor

(Speaker: Keun Jae Kim)

33 Field Effect Transistor

(Speaker: Hongchul Sohn)

44 Power Transistor
(Speaker: Wenwei Xu)

55 Applications of Transistor
(Speaker: Wenwei Xu)
 Field-Effect Transistors

 Basics
 Conduction of a “channel” is controlled by electric field effect
 Three terminals: gate, source, drain
Voltage-controlled current device
 Very little current flows through input (gate) terminals

control terminal

control
voltage

of charge carriers for charge carriers

current channel
 Field-Effect Transistors

 BJT vs. FET

 What was BJT then?
A current-controlled current device
 Comparison