IRF7342PbF
HEXFET® Power MOSFET
 Generation V Technology
 Ultra Low On-Resistance   S1
1 8
D1
VDSS -55V
 Dual P Channel MOSFET G1 2 7
D1

 Surface Mount S2
3 6
D2
RDS(on) max. 0.105
 Available in Tape & Reel G2
4 5
D2

 Dynamic dv/dt Rating Top View ID -3.4A

 Fast Switching
 Lead-Free

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and SO-8
ruggedized device design that HEXFET Power MOSFETs are well IRF7342PbF
known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
G D S
The SO-8 has been modified through a customized lead frame for Gate Drain Source
enhanced thermal characteristics and multiple-die capability making it
ideal in a variety of power applications. With these improvements,
multiple devices can be used in an application with dramatically
reduced board space. The package is designed for vapor phase, infra
red, or wave soldering techniques. Power dissipation of greater than
0.8W is possible in a typical PCB mount application.

Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
IRF7342PbF SO-8 Tape and Reel 4000 IRF7342PbF

Absolute Maximum Ratings

Symbol Parameter Max. Units
VDS Drain-Source Voltage -55 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.7 A 
IDM Pulsed Drain Current  -27
PD @TA = 25°C Maximum Power Dissipation 2.0
W  
PD @TA = 70°C Maximum Power Dissipation 1.3
Linear De rating Factor 0.016 mW°/C
VGS Gate-to-Source Voltage ± 20
V
VGSM Gate-to-Source Voltage Single Pulse tp < 10µs 30
EAS Single Pulse Avalanche Energy (Thermally Limited)  114 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
TJ Operating Junction and -55 to + 150
°C 
TSTG Storage Temperature Range

Thermal Resistance  
Symbol Parameter Typ. Max. Units
RJA Junction-to-Ambient  ––– 62.5 °C/W

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IRF7342PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.095 0.105 VGS = -10V, ID = -3.4A 
RDS(on) Static Drain-to-Source On-Resistance 
––– 0.150 0.170 VGS = -4.5V, ID = -2.7A 
VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Trans conductance 3.3 ––– ––– S VDS = -10V, ID = -3.1A
––– ––– -2.0 VDS = -55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -25 VDS = -55V,VGS = 0V,TJ =55°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Qg Total Gate Charge ––– 26 38 ID = -3.1A
Qgs Gate-to-Source Charge ––– 3.0 4.5 nC   VDS = -44V
Qgd Gate-to-Drain (‘Miller’) Charge ––– 8.4 13 VGS = -10V, See Fig.10 
td(on) Turn-On Delay Time ––– 14 22 VDD = -28V
tr Rise Time ––– 10 15 ID = -1.0A
ns
td(off) Turn-Off Delay Time ––– 43 64 RG = 6.0
tf Fall Time ––– 22 32 RD = 16
Ciss Input Capacitance ––– 690 ––– VGS = 0V
Coss Output Capacitance ––– 210 ––– pF   VDS = -25V
Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz, See Fig.9

Diode Characteristics  
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
IS ––– ––– -2.0
(Body Diode) showing the
A
Pulsed Source Current integral reverse
ISM ––– ––– -27
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C,IS = -2.0A,VGS = 0V 
trr Reverse Recovery Time ––– 54 80 ns TJ = 25°C ,IF = -2.0A,
Qrr Reverse Recovery Charge ––– 85 130 nC di/dt = 100A/µs 

Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
 Starting TJ = 25°C, L = 20mH, RG = 25, IAS = -3.4A. (See Fig. 8)
ISD -3.4A, di/dt 150A/µs, VDD V(BR)DSS, TJ  150°C.
 Pulse width 300µs; duty cycle  2%.
 When mounted on 1" square copper board , t 10sec.

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IRF7342PbF

100
100 VGS
VGS TOP -15V
TOP -15V -12V
-12V -10V

-I D , Drain-to-Source Current (A)

-10V -8.0V
-I D , Drain-to-Source Current (A)

-8.0V -6.0V
-6.0V -4.0V
-4.0V -3.5V
-3.5V BOTTOM -3.0V
BOTTOM -3.0V 10
10

-3.0V
-3.0V 1
1

20µs PULSE WIDTH

20µs PULSE WIDTH TJ = 150 °C
TJ = 25 °C 0.1
0.1 0.1 1 10 100
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)

Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics

100
100
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)

10
TJ = 25 °C
TJ = 150 °C TJ = 150 °C
10
TJ = 25 °C
1

V DS = -25V V GS = 0 V
20µs PULSE WIDTH 0.1
1 0.2 0.4 0.6 0.8 1.0 1.2 1.4
3 4 5 6 7
-VSD ,Source-to-Drain Voltage (V)
-VGS , Gate-to-Source Voltage (V)

Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Source-Drain Diode

Forward Voltage

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IRF7342PbF

0.240
2.0

R DS (on), Drain-to-Source On Resistance  

ID = -3.4 A
RDS(on) , Drain-to-Source On Resistance

0.200
1.5

VGS = -4.5V
(Normalized)

0.160
1.0

0.120
0.5
VGS = -10V

VGS = -10V 0.080

0.0 0 2 4 6 8 10 12
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature( °C) -I D , Drain Current (A)

Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain

Vs. Temperature Current

0.45
300
ID
EAS , Single Pulse Avalanche Energy (mJ)

TOP -1.5A
250 -2.7A
0.35 BOTTOM -3.4A

200

0.25 150

I D = -3.4 A
100

0.15
50

0
0.05 A 25 50 75 100 125 150
2 5 8 11 14
Starting T J, Junction Temperature ( °C)
-V GS , Gate-to-Source Voltage (V)

Fig. 7 Typical On-Resistance Vs. Gate Voltage

Fig 8. Maximum Avalanche Energy

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IRF7342PbF

1200 20
VGS = 0V, f = 1MHz ID = -3.1A
Ciss = Cgs + Cgd , Cds SHORTED VDS =-48V
Crss = Cgd VDS =-30V

-VGS , Gate-to-Source Voltage (V)

Coss = Cds + Cgd 16 VDS =-12V
960
C, Capacitance (pF)

Ciss
720 12

480 8

Coss
240 4

Crss

0 0
1 10 100 0 10 20 30 40
-VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage

100

D = 0.50
Thermal Response (Z thJA )

0.20
10
0.10

0.05

0.02 PDM
1 0.01
t1
SINGLE PULSE
(THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x ZthJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1, Rectangular Pulse Duration (sec)

Fig. 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7342PbF
SO-8 Package Outline (Dimensions are shown in millimeters (inches)

IN C H ES M ILLIM ETERS
D IM
D B M IN M AX M IN M AX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [ .010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 B ASIC 1.27 B ASIC
e1 .025 B ASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [ .004]
8X b A1 8X L 8X c

0.25 [ .010] C A B 7

F O O T P R IN T
N O TE S :
1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 8 X 0 .7 2 [ .0 2 8 ]
2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R
3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] .
4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A .
5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] .
6 .4 6 [ .2 5 5 ]
6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] .
7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O
A S U B S TR A TE .

3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ]

SO-8 Part Marking Information

E X A M P L E : T H IS IS A N IR F 7 1 0 1 (M O S F E T )
D A T E C O D E (Y W W )
P = D E S IG N A T E S L E A D -F R E E
P R O D U C T (O P T IO N A L )
Y = L A S T D IG IT O F T H E Y E A R
XXXX W W = W EEK
IN T E R N A T IO N A L F7101 A = A S S E M B L Y S IT E C O D E
R E C T IF IE R LO T C O D E
LO G O
PART N U M BER

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com

  6 2016-5-26
 
IRF7342PbF

SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com

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IRF7342PbF

Qualification Information†  
Qualification Level Consumer

MSL1
Moisture Sensitivity Level SO-8
(per JEDEC J-STD-020D)††
RoHS Compliant Yes

† Qualification standards can be found at Infineon’s web site www.infineon.com

†† Applicable version of JEDEC standard at the time of product release.

Revision History
Date Comments
 Updated datasheet with corporate template
05/26/2016
 Added disclaimer on last page.

Trademarks of Infineon Technologies AG 
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