FDS9431A_F085 P-Channel 2.

5V Specified MOSFET
February 2010

tm
FDS9431A_F085
P-Channel 2.5V Specified MOSFET

General Description Features

This P-Channel 2.5V specified MOSFET is produced • -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V
using Fairchild's proprietary, high cell density, DMOS
RDS(ON) = 0.180 Ω @ VGS = -2.5 V.
technology. This very high density process has been
especially tailored to minimize on-state resistance and
yet maintain superior switching performance. • Fast switching speed.

Applications • High density cell design for extremely low RDS(ON).

• DC/DC converter • High power and current handling capability.

• Power management
• Qualified to AEC Q101
• Load switch
• Battery protection • RoHS Compliant

D
D 5 4
D
D 6 3

7 2
G
S 8 1
S
SO-8 S
Absolute Maximum Ratings o
T A=25 C unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage -20 V
VGSS Gate-Source Voltage ±8 V
ID Drain Current - Continuous (Note 1a) -3.5 A
- Pulsed -18
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1.0
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RqJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDS9431A FDS9431A_F085 13’’ 12mm 2500 units

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDS9431A_F085 Rev. A
 FDS9431A_F085 P-Channel 2.5V Specified MOSFET
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 mA -20 V
DBVDSS Breakdown Voltage Temperature ID = -250 mA,Referenced to 25°C -28 mV/°C
DTJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 mA
IGSSF Gate-Body Leakage Current, VGS = 8 V, VDS = 0 V 100 nA
Forward
IGSSR Gate-Body Leakage Current, VGS = -8 V, VDS = 0 V -100 nA
Reverse

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 mA -0.4 -0.6 -1 V
DVGS(th) Gate Threshold Voltage ID = -250 mA,Referenced to 25°C 2 mV/°C
DTJ Temperature Coefficient
RDS(on) Static Drain-Source VGS = -4.5 V, ID = -3.5 A 0.110 0.130 W
On-Resistance VGS = -2.5 V, ID = -3.0 A 0.140 0.180 W
VGS = -4.5 V, ID = -3.5 A 0.155 0.220 W
TJ=125°C
ID(on) On-State Drain Current VGS = -4.5 V, VDS =-5 V -10 A
gFS Forward Transconductance VDS = -5 V, ID = -3.5 A 6.5 S

Dynamic Characteristics
Ciss Input Capacitance VDS = -10 V, VGS = 0 V, 405 pF
Coss Output Capacitance f = 1.0 MHz 170 pF
Crss Reverse Transfer Capacitance 45 pF

Switching Characteristics (Note 2)

td(on) Turn-On Delay Time VDD = -5 V, ID = -1 A, 6.5 13 ns
tr Turn-On Rise Time VGS = -4.5 V, RGEN = 6 W 20 35 ns
td(off) Turn-Off Delay Time 31 50 ns
tf Turn-Off Fall Time 21 35 ns
Qg Total Gate Charge VDS = -5 V, ID = -3.5 A, 6 8.5 nC
Qgs Gate-Source Charge VGS = -4.5 V 0.8 nC
Qgd Gate-Drain Charge 1.3 nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -2.1 A
VSD Drain-Source Diode Forward VGS = 0 V, IS = -2.1 A (Note 2) -0.7 -1.2 V
Voltage
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 50° C/W when b) 105° C/W when c) 125° C/W on a minimum

mounted on a 1 in2 mounted on a 0.04 in2 mounting pad.
pad of 2 oz. copper. pad of 2 oz. copper.

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

FDS9431A_F085 Rev. A 2 www.fairchildsemi.com

 FDS9431A_F085 P-Channel 2.5V Specified MOSFET
Typical Characteristics

10 2

DRAIN-SOURCE ON-RESISTANCE
VGS= -4.5V -3.5V
8 -2.5V
-ID, DRAIN CURRENT (A)

1.8

RDS(ON) , NORMALIZED
VGS = -2.0V

1.6
6
-2.5
1.4
4 -2.0V
-3.0
1.2 -3.5
2
-4.0
-4.5
1
-1.5V
0
0.8
0 1 2 3 4 5 0 2 4 6 8 10
-VDS, DRAIN TO SOURCE VOLTAGE (V) -I D , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.5
DRAIN-SOURCE ON-RESISTANCE

I D = -1.6A I D = -0.8A
R DS(ON),ON-RESISTANCE(OHM)

V GS = -4.5V
1.4 0.4
RDS(ON) , NORMALIZED

1.2 0.3

TJ = 125°C
1 0.2

0.8 0.1 25°C

0.6 0
-50 -25 0 25 50 75 100 125 150 1 2 3 4 5
TJ , JUNCTION TEMPERATURE (°C) -V ,GATE TO SOURCE VOLTAGE (V)
GS

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with

withTemperature. Gate-to-Source Voltage.

10 10
-I S , REVERSE DRAIN CURRENT (A)

VDS = -5V TA = -55°C VGS = 0V

25°C
-I D , DRAIN CURRENT (A)

8 125°C 1

TJ = 125°C
6 0.1 25°C
-55°C
4 0.01

2 0.001

0 0.0001
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VGS , GATE TO SOURCE VOLTAGE (V) -V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS9431A_F085 Rev. A 3 www.fairchildsemi.com

 FDS9431A_F085 P-Channel 2.5V Specified MOSFET
Typical Characteristics (continued)

5 2000
I D = -1.6A
V D S = -5V
-V GS , G ATE -S O U R CE VO LTAG E (V )

4 1000

-15V Ciss

C AP AC I TA NC E (pF)
3 500

2
200
Coss
1 f = 1 M Hz
100
VG S = 0 V Crss
0
50
0 2 4 6 8 0.1 0.2 0.5 1 2 5 10 20
Q g , G ATE C H ARG E (nC ) -V DS , D R A IN T O S OU R CE V OLTA GE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

50 50
100 SINGLE PULSE
us
o
IT 1m RθJA= 125 C/W
10 LI M s 40
N)
o
TA= 25 C
S( O 10 m
RD
- I D , D R AI N C U R R EN T (A)

s
3 100
POWER (W)

ms 30
1s
0 .5 10 s
DC 20
VVGS == -4.5V
G S -4.5V
SINGLE
SING L E PUL PULSESE
10
0. 05 RRθJA
== 125°C/W
135 °C/W
θ J A
A
TTA == 25°C
2 5°C A
0
0. 01
0 .1 0 .3 1 2 5 10 30 0.001 0.01 0.1 1 10 100 1000

- VD S , DR A IN -SO UR C E V OLTA GE (V) SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1
TR ANSI ENT TH ER MAL RESISTANC E

0.5 D = 0.5
r(t), NORM ALIZED EFFECTIVE

R θJ A (t) = r(t) * R θJ A
0.2
0.2 R θJ A= 125°C /W
0.1
0.1
0 .0 5
0.05 P(p k )
0 .0 2
0.02 t1
0.0 1 t2
0.01
S i n g le P ul s e TJ - TA = P * RθJA ( t)
0.0 05
D u t y C y c l e, D = t 1 /t 2
0.0 02
0.0 01
0.0001 0.0 01 0.01 0.1 1 10 100 300
t 1, TI ME (s e c )

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.

FDS9431A_F085 Rev. A 4 www.fairchildsemi.com

 FDS9431A_F085 P-Channel 2.5V Specified MOSFET
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Definition of Terms
Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.

Rev. I47

FDS9431A_F085 Rev. A 5 www.fairchildsemi.com