FDW2506P

October 2000

FDW2506P
Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description Features

This P-Channel 2.5V specified MOSFET is a rugged • –5.3 A, –20 V, RDS(ON) = 0.022 Ω @ VGS = –4.5 V.
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power RDS(ON) = 0.033 Ω @ VGS = –2.5V.
management applications with a wide range of gate
drive voltage (2.5V – 12V). • Extended VGSS range (±12V) for battery applications

Applications • Low gate charge

• Load switch • High performance trench technology for extremely

• Motor drive low RDS(ON)
• DC/DC conversion
• Low profile TSSOP-8 package
• Power management

G2
S2
S2 1 8
D2
2 7
G1
S1 3 6
S1
D1 4 5
TSSOP-8
Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage –20 V
VGSS Gate-Source Voltage ±12 V
ID Drain Current – Continuous (Note 1) –5.3 A
– Pulsed –30
PD Power Dissipation for Single Operation (Note 1a) 1.0 W
(Note 1b) 0.6
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 125 °C/W
(Note 1b) 208

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
2506P FDW2506P 13’’ 12mm 2500 units

2000 Fairchild Semiconductor Corporation FDW2506P Rev. C (W)

 FDW2506P
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V
∆BVDSS Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C –12 mV/°C
===∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –100 nA
IGSSR Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.6 –0.8 –1.5 V
∆VGS(th) Gate Threshold Voltage ID = –250 µA, Referenced to 25°C 3 mV/°C
===∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = –4.5 V, ID = –5.3 A 0.018 0.022 Ω
On–Resistance VGS = –2.5 V, ID = –4.4 A 0.026 0.033
VGS = –4.5 V, ID = –5.3 A, TJ=125°C 0.023 0.035
ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –30 A
gFS Forward Transconductance VDS = –5 V, ID = –5.3 A 24 S

Dynamic Characteristics
Ciss Input Capacitance 1015 pF
VDS = –10 V, V GS = 0 V,
Coss Output Capacitance 446 pF
f = 1.0 MHz
Crss Reverse Transfer Capacitance 118 pF

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time VDD = –5 V, ID = –1 A, 13 23 ns
VGS = –4.5 V, RGEN = 6 Ω
tr Turn–On Rise Time 17 31 ns
td(off) Turn–Off Delay Time 75 120 ns
tf Turn–Off Fall Time 38 61 ns
Qg Total Gate Charge VDS = –10V, ID = –5.3 A, 21 34 nC
VGS = –4.5 V
Qgs Gate–Source Charge 4.5 nC
Qgd Gate–Drain Charge 6 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –0.83 A
VSD Drain–Source Diode Forward VGS = 0 V, IS = –0.83 A (Note 2) –0.7 –1.2 V
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDW2506P Rev. C (W)

 FDW2506P
Typical Characteristics

30 2.6
VGS = -4.5V

DRAIN-SOURCE ON-RESISTANCE
-3.0V 2.4
25 -3.5V VGS = -2.0V
-ID, DRAIN CURRENT (A)

-2.5V 2.2

RDS(ON), NORMALIZED
20 2

1.8
15
-2.0V 1.6
-2.5V
10 1.4
-3.0V
1.2 -3.5V
5
1 -4.5V
0
0.8
0 1 2 3 4
0 6 12 18 24 30
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DIRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4 0.07
DRAIN-SOURCE ON-RESISTANCE

ID = -5.3A ID = -2.7A
RDS(ON), ON-RESISTANCE (OHM)

1.3 VGS = -4.5V 0.06

RDS(ON), NORMALIZED

1.2 0.05

1.1 0.04
TA = 125oC
1 0.03
TA = 25oC
0.9 0.02

0.8 0.01
-50 -25 0 25 50 75 100 125 150 1 2 3 4 5
o
TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

30 100
VDS = -5V TA = -55oC
-IS, REVERSE DRAIN CURRENT (A)

25oC VGS = 0V
25 10
-ID, DRAIN CURRENT (A)

o
125 C
TA = 125oC
20 1
25oC
15 0.1
-55oC

10 0.01

5 0.001

0 0.0001
0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDW2506P Rev. C (W)

 FDW2506P
Typical Characteristics

5 3500
ID = -5.3A VDS = -5V
-VGS, GATE-SOURCE VOLTAGE (V)

f = 1 MHz
-10V 3000
VGS = 0 V
4
-15V

CAPACITANCE (pF)
2500
CISS
3
2000

2 1500

1000
1
500 COSS
CRSS
0 0
0 4 8 12 16 20 24 0 4 8 12 16 20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 30
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
SINGLE PULSE
100µ 25
RθJA = 208°C/W
-ID, DRAIN CURRENT (A)

10 TA = 25°C
10ms 20
100ms
1 1s 15
10s
DC
VGS = -4.5V 10
SINGLE PULSE
0.1
RθJA = 208oC/W
5
TA = 25oC

0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
TRANSIENT THERMAL RESISTANCE

1
r(t), NORMALIZED EFFECTIVE

D = 0.5

0.2
RθJA(t) = r(t) + RθJA
0.1
RθJA = 208 °C/W
0.1
0.05
P(pk)
0.02
t1
0.01
0.01 t2
SINGLE PULSE TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDW2506P Rev. C (W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ FASTr™ QFET™ VCX™

Bottomless™ GlobalOptoisolator™ QS™
CoolFET™ GTO™ QT Optoelectronics™
CROSSVOLT™ HiSeC™ Quiet Series™
DOME™ ISOPLANAR™ SuperSOT™-3
E2CMOSTM MICROWIRE™ SuperSOT™-6
EnSignaTM OPTOLOGIC™ SuperSOT™-8
FACT™ OPTOPLANAR™ SyncFET™
FACT Quiet Series™ POP™ TinyLogic™
FAST® PowerTrench® UHC™

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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. F1
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