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September 2000
FDS6982S
Dual Notebook Power Supply N-Channel PowerTrench SyncFet™
D1
D1 5 4
D2
6 Q1 3
D2
7 2
G1 Q2
S1 8 1
SO-8 G2
S2
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA Q2 1 3 V
VDS = VGS, ID = 250 µA Q1 1 3
∆VGS(th) Gate Threshold Voltage ID = 1 mA, Referenced to 25°C Q2 -3.5 mV/°C
===∆TJ Temperature Coefficient ID = 250 µA, Referenced to 25°C Q1 -5
RDS(on) Static Drain-Source VGS = 10 V, ID = 8.6 A Q2 0.013 0.016 Ω
On-Resistance VGS = 10 V, ID = 8.6 A, TJ = 125°C 0.020 0.027
VGS = 4.5 V, ID = 7.5 A 0.017 0.022
VGS = 10 V, ID = 6.3 A Q1 0.021 0.028
VGS = 10 V, ID = 6.3 A, TJ = 125°C 0.038 0.047
VGS = 4.5 V, ID = 5.6 A 0.028 0.035
ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V Q2 30 A
Q1 20
gFS Forward Transconductance VDS = 5 V, ID = 8.6 A Q2 38 S
VDS = 5 V, ID = 6.3 A Q1 18
Dynamic Characteristics
Ciss Input Capacitance VDS = 10 V, VGS = 0 V, Q2 2040 pF
f = 1.0 MHz Q1 815
Coss Output Capacitance Q2 615 pF
Q1 186
Crss Reverse Transfer Capacitance Q2 216 pF
Q1 66
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
50 2.5
VGS = 10V
DRAIN-SOURCE ON-RESISTANCE
6.0V
40 4.5V
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
5.0V 4.0V VGS = 3.0V
30
0.5
0
0 10 20 30 40 50
0 0.5 1 1.5 2 2.5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
2 0.04
ID = 11.5A ID = 11.5 A
DRAIN-SOURCE ON-RESISTANCE
1.8
RDS(ON), ON-RESISTANCE (OHM)
0.03
1.4
1.2 0.025
1
0.02 TA = 125oC
0.8
0.6 0.015
TA = 25oC
0.4
0.01
-50 -25 0 25 50 75 100 125 150
2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
50 10
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V TA = -55 C o
o
40 25 C
ID, DRAIN CURRENT (A)
100o 1
TA = 100oC
30
25oC
20 -55oC
0.1
10
0.01
0
0 0.2 0.4 0.6 0.8
1 2 3 4 5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
10 3000
ID = 11.5A VDS = 5V
f = 1MHz
VGS, GATE-SOURCE VOLTAGE (V)
CAPACITANCE (pF)
2000
6
1500
4
1000
COSS
2
500
CRSS
0 0
0 10 20 30 40 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
100 50
RDS(ON) LIMIT
P(pk), PEAK TRANSIENT POWER (W)
100µs SINGLE PULSE
40 RθJA = 135°C/W
ID, DRAIN CURRENT (A)
10 1ms TA = 25°C
10ms
100ms 30
1s
1 10s
20
VGS = 10V DC
SINGLE PULSE
0.1
RθJA = 135oC/W 10
TA = 25oC
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
40 2
VGS = 10V
6.0V 1.8
4.5V
30 4.0V
1.6 VGS = 3.5V
3.5V 4.0V
20 1.4
4.5V
5.0V
1.2
3.0V 6.0V
10 10V
1
2.5V
0.8
0
0 10 20 30 40
0 1 2 3 4
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.6 0.08
ID = 6.3A
VGS = 10V ID = 3.5A
1.4
0.06
1.2 o
TA = 125 C
0.04
1
o
0.02 TA = 25 C
0.8
0.6
0
-50 -25 0 25 50 75 100 125 150
2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with Figure 14. On-Resistance Variation with
Temperature. Gate-to-Source Voltage.
40 100
o
TA = -55 C VGS = 0V
VDS = 5V o
25 C
125 C
o 10
30 TA = 125 C
o
1
o
25 C
20 0.1
o
-55 C
0.01
10
0.001
0 0.0001
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
10 1200
ID = 6.3A f = 1MHz
VDS = 5V 10V VGS = 0 V
1000
8
15V
800
CISS
6
600
4
400
2
200
COSS
CRSS
0 0
0 4 8 12 16 0 5 10 15 20 25 30
100 30
SINGLE PULSE
o
100µs RθJA = 135 C/W
RDS(ON) LIMIT 25
1ms o
10 TA = 25 C
10ms
20
100ms
1s
1 10s 15
DC
VGS = 10V 10
0.1 SINGLE PULSE
o
RθJA = 135 C/W 5
o
TA = 25 C
0.01 0
0.1 1 10 100 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC)
Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
0.5 D = 0.5
r(t) , NO RMALIZED EFFECTIVE
0.2 0.2
R θJA (t) = r(t) * R θJA
0.1 0.1 R θJA = 135°C/W
0.05 0.05
0.02 P(pk)
0.02 0.01
0.01 Single Pulse
t1
t2
0.005
TJ - T A = P * R θJA(t)
0.002 Duty Cycle, D = t1 /t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t 1, TIME (s ec)
0.01 100oC
Current: 3A/div
0.001
0
25oC
0.0001
0 10 20 30
VDS, REVERSE VOLTAGE (V)
10nS/div
DISCLAIMER
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. F1