Si9926CDY

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Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
SO-8 Dual FEATURES
D2
• TrenchFET® power MOSFET
D2 5
D1 6 • 100 % UIS tested
D1 7
8
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available

4 APPLICATIONS
3 G2
2 S2
• DC/DC converter
1 G1 - Game machine
S1 - PC
Top View D1 D2
PRODUCT SUMMARY
VDS (V) 20
RDS(on) max. () at VGS = 4.5 V 0.018
RDS(on) max. () at VGS = 2.5 V 0.022 G1 G2
Qg typ. (nC) 10
ID (A) a 8
Configuration Dual S1 S2

N-Channel MOSFET N-Channel MOSFET

ORDERING INFORMATION
Package SO-8
Lead (Pb)-free Si9926CDY-T1-E3
Lead (Pb)-free and halogen-free Si9926CDY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 20
V
Gate-source voltage VGS ± 12
TC = 25 °C 8a
TC = 70 °C 8a
Continuous drain current (TJ = 150 °C) ID
TA = 25 °C 8 a, b, c
TA = 70 °C 6.7 b, c
A
Pulsed drain current IDM 30
TC = 25 °C 2.6
Continuous source-drain diode current IS
TA = 25 °C 1.7 b, c
Single pulse avalanche current IAS 5
L = 0.1 mH
Single pulse avalanche energy EAS 1.25 mJ
TC = 25 °C 3.1
TC = 70 °C 2
Maximum power dissipation PD W
TA = 25 °C 2 b, c
TA = 70 °C 1.3 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient a, c, d t  10 s RthJA 50 62.5
°C/W
Maximum junction-to-foot (drain) Steady state RthJF 32 40
Notes
a. Package limited, TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 110 °C/W

SO9-0704-Rev. B, 27-Apr-09 1 Document Number: 68606

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 20 - - V
VDS temperature coefficient VDS /TJ - 25 -
ID = 250 μA mV/°C
VGS(th) temperature coefficient VGS(th)/TJ - -4 -
Gate-source threshold voltage VGS(th) VDS = VGS , ID = 250 μA 0.6 - 1.5 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 12 V - - ± 100 nA
VDS = 20 V, VGS = 0 V - - 1
Zero gate voltage drain current IDSS μA
VDS = 20 V, VGS = 0 V, TJ = 55 °C - - 10
On-state drain current a ID(on) VDS  5 V, VGS = 4.5 V 30 - - A
VGS = 4.5 V, ID = 8.3 A - 0.015 0.018
Drain-source on-state resistance a RDS(on) 
VGS = 2.5 V, ID = 4.5 A - 0.017 0.022
Forward transconductance a gfs VDS = 10 V, ID = 8.3 A - 45 - S
Dynamic b
Input capacitance Ciss - 1200 -
Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz - 220 - pF
Reverse transfer capacitance Crss - 100 -
VDS = 10 V, VGS = 10 V, ID = 8.3 A - 22 33
Total gate charge Qg
- 10 15
nC
Gate-source charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 8.3 A - 2.5 -
Gate-drain charge Qgd - 1.7 -
Gate resistance Rg f = 1 MHz - 2.4 - 
Turn-on delay time td(on) - 15 25
Rise time tr VDD = 10 V, RL = 1.5  - 10 15
Turn-off delay time td(off) ID  6.7 A, VGEN = 4.5 V, Rg = 1  - 35 55
Fall time tf - 12 20
ns
Turn-on delay time td(on) - 10 15
Rise time tr VDD = 10 V, RL = 1.5  - 12 20
Turn-off delay time td(off) ID  6.7 A, VGEN = 10 V, Rg = 1  - 25 40
Fall time tf - 10 15
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS TC = 25 °C - - 2.6
A
Pulse diode forward current ISM - - 30
Body diode voltage VSD IS = 6.7 A, VGS = 0 V - 0.8 1.2 V
Body diode reverse recovery time trr - 20 40 ns
Body diode reverse recovery charge Qrr IF = 6.7 A, di/dt = 100 A/μs, - 10 20 nC
Reverse recovery fall time ta TJ = 25 °C - 10 -
ns
Reverse recovery rise time tb - 10 -
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing
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Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

SO9-0704-Rev. B, 27-Apr-09 2 Document Number: 68606

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si9926CDY
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

30 10
VGS = 5 V thru 2.5 V
TC = - 55 °C
24 8
I D - Drain Current (A)

I D - Drain Current (A)

18 6

VGS = 2 V TC = 125 °C
12 4

6 2
TC = 25 °C
VGS = 1 V
VGS = 1.5 V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.022 1500

0.020 Ciss
1200
R DS(on) - On-Resistance (Ω)

VGS = 2.5 V
C - Capacitance (pF)

0.018
900

0.016

600
0.014
Coss
VGS = 4.5 V
300
0.012

Crss
0.010 0
0 6 12 18 24 30 0 5 10 15 20

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.6

ID = 8.3 A ID = 8.3 A
VGS = 4.5 V, 2.5 V
VGS - Gate-to-Source Voltage (V)

8 1.4
VDS = 10 V
R DS(on) - On-Resistance
(Normalized)

6 1.2
VDS = 16 V

4 1.0

2 0.8

0 0.6
0 5 10 15 20 25 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

SO9-0704-Rev. B, 27-Apr-09 3 Document Number: 68606

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si9926CDY
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.040
100
ID = 8.3 A

0.030

RDS(on) - On-Resistance (Ω)

I S - Source Current (A)

TJ = 150 °C TJ = 125 °C
TJ = 25 °C
10 0.020

TJ = 25 °C
0.010

1 0.000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

1.4 30

25
1.2 ID = 250 µA

20
Power (W)
V GS(th) (V)

1.0

15

0.8
10

0.6
5

0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000
TJ - Temperature (°C) Time (s)

Threshold Voltage Single Pulse Power

100
Limited by RDS(on)*

100 µs
10
I D - Drain Current (A)

1 ms

1 10 ms

100 ms

1s
0.1 10 s
DC
TA = 25 °C BVDSS
Single Pulse Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

SO9-0704-Rev. B, 27-Apr-09 4 Document Number: 68606

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si9926CDY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

12 3.5

3.0
10

Package Limited 2.5

ID - Drain Current (A)

Power (W)
2.0
6
1.5

4
1.0

2
0.5

0 0.0
0 25 50 75 100 125 150 25 50 75 100 125 150

TC - Case Temperature (°C) TC - Case Temperature (°C)

Current Derating a Power Derating

Notes
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit

SO9-0704-Rev. B, 27-Apr-09 5 Document Number: 68606

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si9926CDY
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse

0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68606.

SO9-0704-Rev. B, 27-Apr-09 6 Document Number: 68606

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

Document Number: 71192 www.vishay.com

11-Sep-06 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)
(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72606

22 Revision: 21-Jan-08
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Revision: 09-Jul-2021 1 Document Number: 91000